14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power

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14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power

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RFP14N06
14A, 60V, 0.100 Ohm, N-Channel Power MOSFET
This N-Channel power MOSFET manufactured using MegaFET process. This process which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching convertors, motor drivers, relay drivers. This transistor operated directly from integrated circuits. Formerly developmental type TA09770.
Features
14A, rDS(ON) 0.100 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP14N06 PACKAGE TO-220AB BRAND RFP14N06
Symbol
NOTE: When ordering, entire part number.
Packaging
TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
RFP14N06
Absolute Maximum Ratings
25oC Unless Otherwise Specified RFP14N06 Refer Peak Current Curve Refer Curve 0.32 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note Pulsed Avalanche Rating Power Dissipation Linear Derating Factor Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS TO-220AB 48V, 14A, 3.42, IG(REF) 0.4mA (Figure TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure Rated BVDSS, Rated BVDSS, 150oC ±20V 14A, 10V, (Figure =30V, 4.3, 10V, (Figure ±100 0.100 3.125 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Diode Reverse Recovery Time NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure Peak Current Capability Curve (Figure SYMBOL 14A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
RFP14N06 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC)
Unless Otherwise Specified
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK 10-4 10-2 10-1 10-3 RECTANGULAR PULSE DURATION
0.01 10-5
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
25oC RATED SINGLE PULSE IDM, PEAK CURRENT
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
100µs
OPERATION THIS AREA LIMITED rDS(ON)
25oC
10ms 100ms
VDS, DRAIN SOURCE VOLTAGE
10-5
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
RFP14N06 Typical Performance Curves
IAS, AVALANCHE CURRENT
Unless Otherwise Specified (Continued)
DRAIN CURRENT STARTING 25oC
PULSE DURATION 250µs DUTY CYCLE 0.5% 25oC
STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.01 tAV, TIME AVALANCHE (ms)
DRAIN SOURCE VOLTAGE 4.5V
NOTE: Refer Fairchild Application Notes AN9321 AN9322 FIGURE UNCLAMPED INDUCTIVE SWITCHING FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%
25oC -55oC 175oC NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V,
VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
VDS, 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
NORMALIZED GATE THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
RFP14N06 Typical Performance Curves
VDS, DRAIN SOURCE VOLTAGE CISS CAPACITANCE (pF) COSS VDS, DRAIN SOURCE VOLTAGE CRSS 1MHz CISS CRSS COSS
Unless Otherwise Specified (Continued)
BVDSS BVDSS VGS, GATE SOURCE VOLTAGE
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 4.28 IG(REF) 0.4mA IG(REF) IG(ACT) IG(REF) IG(ACT)
TIME (µs)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tOFF td(OFF)
td(ON)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
RFP14N06 Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
RFP14N06 PSPICE Electrical Model
.SUBCKT RFP14N06
8.84e-10 9.34e-10 5.2e-10
DPLCAP LDRAIN RSCL1 RSCL2 ESCL MOS1 RSOURCE LSOURCE SOURCE RDRAIN EBREAK MOS2 DBODY DBREAK
9/12/94
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 62.87 EVTO
GATE
DRAIN
EVTO
LDRAIN 1e-9 LGATE 4.34e-9 LSOURCE 3.79e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 2.2e-3 RGATE 5.64 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 42.3e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
LGATE
RGATE
RBREAK RVTO VBAT
VBAT 0.82 ESCL VALUE .MODEL DBDMOD 1.5e-13 10.9e-3 TRS1 2.3e-3 TRS2 -1.75e-5 6.84e-10 4.2e-8) .MODEL DBKMOD 4.15e-1 TRS1 3.73e-3 TRS2 -3.21e-5) .MODEL DPLCAPMOD (CJO 26.2e-11 1e-30 .MODEL MOSMOD NMOS (VTO 3.91 12.68 1e-30 .MODEL RBKMOD (TC1 7.73e-4 2.12e-6) .MODEL RDSMOD (TC1 5.0e-3 2.53e-5) .MODEL RSCLMOD (TC1 2.05e-3 1.35e-5) .MODEL RVTOMOD (TC1 -4.44e-3 -6.45e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -5.29 VOFF= -3.29) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.29 VOFF= -5.29) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.25 VOFF= 2.75) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 2.75 VOFF= -2.25) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFP14N06 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power

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