Rev. January 2006 Product data sheet General description LDM
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BLF4G20LS-110B
Rev. January 2006 Product data sheet
General description
LDMOS power transistor base station applications frequencies from 1800 2000 MHz.
Table Typical performance 1930 1990 MHz; Tcase unless otherwise specified; class-AB production test circuit; typical values Mode operation EDGE
(AV)
(dB) 13.4 13.8
38.5
ACPR400 (dBc)
ACPR600 (dBc)
EVMrms
ACPR400 resolution bandwidth. ACPR600 resolution bandwidth.
CAUTION This device sensitive ElectroStatic Discharge (ESD). Therefore care should taken during transport handling.
Features
Typical EDGE performance frequency 1930 1990 MHz, supply voltage Load power (AV) Gain 13.8 (typ) Efficiency 38.5 (typ) ACPR400 (typ) ACPR600 (typ) EVMrms (typ) Easy power control Excellent ruggedness High efficiency Excellent thermal stability Designed broadband operation (1800 2000 MHz) Internally matched ease
Philips Semiconductors
BLF4G20LS-110B
Applications
power amplifiers GSM, EDGE CDMA base stations multicarrier applications 1800 2000 frequency range.
Pinning information
Table Pinning Description drain gate source
Simplified outline
Symbol
sym039
Connected flange
Ordering information
Table Ordering information Package Name BLF4G20LS-110B Description earless flanged LDMOST ceramic package; leads Version SOT502B Type number
Limiting values
Table Limiting values accordance with Absolute Maximum Rating System (IEC 60134). Symbol Tstg Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions -0.5 +150 Unit
Thermal characteristics
Table Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction case Conditions Tcase 0.62 0.52 0.71 0.61 Unit
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Characteristics
Table Characteristics unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS RDS(on) gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VGS(th) Unit V(BR)DSS drain-source breakdown voltage
drain-source on-state resistance VGS(th) feedback capacitance
Application information
Table Application information Mode operation: EDGE; 1930 1990 MHz; performance Tcase unless otherwise specified; class-AB production test circuit. Symbol Parameter power gain input return loss drain efficiency Conditions PL(AV) PL(AV) PL(AV) PL(AV) PL(AV) PL(AV) PL(AV) 13.8 38.5 Unit -6.5
ACPR400 adjacent channel power ratio (400 kHz) ACPR600 adjacent channel power ratio (600 kHz) EVMrms EVMM EDGE signal distortion error peak EDGE signal distortion error
Ruggedness class-AB operation
BLF4G20LS-110B capable withstanding load mismatch corresponding VSWR through phases under following conditions: (CW); 1990 MHz.
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
(dB)
001aac387
(dB)
001aac388
PL(AV)
Tcase 1990
Tcase 1990
One-tone power gain drain efficiency functions load power; typical values
Two-tone power gain drain efficiency functions average load power; typical values
IMD3 (dBc)
001aac390
(dBc)
001aac389
IMD3
IMD5 IMD7
PL(AV)
PL(AV)
Tcase 1990
Tcase 1990
Intermodulation distortion function average load power; typical values
Third order intermodulation distortion function average load power; typical values
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
(dB)
001aac391
ACPR (dBc)
001aac392
ACPR400
ACPR600
PL(AV)
PL(AV)
Tcase 1990
Tcase 1990
EDGE power gain drain efficiency functions average load power; typical values
001aac393
EDGE ACPR function average load power; typical values
ACPR (dBc)
001aac394
EVMM
ACPR EVMrms EVMrms PL(AV)
Tcase 1990
Tcase 1990
EDGE peak functions average load power; typical values
EDGE ACPR functions drain efficiency; typical values
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Test information
input
output
001aad664
Table list components.
Test circuit operation 1990
12.5
17.6
12.0
15.2
001aac395
striplines double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with thickness 0.76 Table list components.
Component layout 1990 test circuit
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
List components (see Figure 10). Value
Table
Component Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Philips electrolytic capacitor Philips chip resistor hand made wire
Dimensions Catalogue number
0603 1812X7R105KL2AB
American Technical Ceramics type 100B capacitor same quality.
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Package outline
Earless flanged LDMOST ceramic package; leads SOT502B
scale
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.72 3.43 0.186 0.135 12.83 12.57 0.15 0.08 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 0.210 0.170 1.70 1.45 20.70 20.45 9.91 9.65 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Package outline SOT502B
9397 14548 Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Abbreviations
Table Acronym ACPR CDMA EDGE LDMOS VSWR Abbreviations Description Adjacent Channel Power Ratio Code Division Multiple Access Continuous Wave Enhanced Data rates Evolution Error Vector Magnitude Global System Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Radio Frequency Voltage Standing Wave Ratio
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Revision history
Table Revision history Release date Data sheet status Product data sheet Change notice Doc. number 9397 14548 Supersedes Document
BLF4G20LS-110B_1 20060110
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Data sheet status
Level Data sheet status Objective data Preliminary data Product status Development Qualification Definition This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Product data
Production
Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status.
Definitions
Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors makes representation warranty that such applications will suitable specified without further testing modification.
customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys license title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
Trademarks
Notice referenced brands, product names, service names trademarks property their respective owners.
Disclaimers
Life support These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors
Contact information
additional information, please visit: sales office addresses, send email
9397 14548
Koninklijke Philips Electronics N.V. 2006. rights reserved.
Product data sheet
Rev. January 2006
Philips Semiconductors
BLF4G20LS-110B
Contents
Product profile General description. Features Applications Pinning information Ordering information Limiting values. Thermal characteristics. Characteristics Application information. Ruggedness class-AB operation. Test information Package outline Abbreviations Revision history Data sheet status Definitions Disclaimers Trademarks. Contact information
Koninklijke Philips Electronics N.V. 2006
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. Date release: January 2006 Document number: 9397 14548
Published Netherlands
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