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HYB5117800BSJ-50/-60/-70 words 8-bit organization operating tempe
Top Searches for this datasheet8-Bit Dynamic HYB5117800BSJ-50/-60/-70 words 8-bit organization operating temperature Performance:: tRAC tCAC access time access time Access time from address Read/Write cycle time Fast page mode cycle time Single supply power dissipation max. active (-50 version) max. active (-60 version) max. active (-70 version) standby (TTL) 5.5. standby (CMOS) Output unlatched cycle allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh test mode Fast page mode capability inputs, outputs clocks fully TTL-compatible 2048 refresh cycles Plastic Package: P-SOJ-28-3 Semiconductor Group 1.96 5117800BSJ-50/-60/-70 8-DRAM 5117800BSJ MBit dynamic organized 2097152 words 8-bits. 5117800BSJ utilizes submicron CMOS silicon gate process technology, well advanced circuit techniques provide wide operating margins, both internally system user. Multiplexed address inputs permit 5117800BSJ packaged standard plastic package. These packages provide high system densities compatible with commonly used automatic testing insertion equipment. System-oriented features include single power supply, direct interfacing with high-performance logic device families such Schottky TTL. Ordering Information Type 5117800BSJ-50 5117800BSJ-60 5117800BSJ-70 Names I/O1-I/O8 Address Inputs Column Address Inputs Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply Ground connected Ordering Code Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 Package P-SOJ-28-3 P-SOJ-28-3 P-SOJ-28-3 Descriptions DRAM (access time DRAM (access time DRAM (access time N.C. Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM P-SOJ-28-3 (400mil) I/O1 I/O2 I/O3 I/O4 N.C. I/O8 I/O7 I/O6 I/O5 Configuration Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM I/O1 I/O2 I/O8 Data Buffer Clock Generator Data Buffer Column Address Buffer(10) Column Decoder Refresh Controller Sense Amplifier Gating Refresh Counter (11) 1024 Address Buffers(11) Decoder 2048 Memory Array 2048x1024x8 Clock Generator Voltage Down Generator (internal) Block Diagram Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Absolute Maximum Ratings Operating temperature range Storage temperature range.- Input/output voltage .-0.5 (Vcc+0.5,7.0) Power supply voltage.-1.0V Power dissipation. Data current (short circuit) Note: Stresses above those listed under "Absolute Maximum Ratings" cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Characteristics Parameter Input high voltage Input voltage Output high voltage (IOUT Output voltage (IOUT Input leakage current,any input 0.3V, other pins Output leakage current disabled, VOUT 0.3V) Average supply current: version version version (RAS, CAS, address cycling, min.) Standby supply current (RAS VIH) ICC2 Average supply current, during RAS-only refresh cycles: version version version (RAS cycling: VIH, min.) Symbol Limit Values min. max. Vcc+0.5 Unit Test Condition II(L) IO(L) ICC1 ICC3 Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Characteristics (cont'd) Parameter Symbol Limit Values min. Average supply current, ICC4 during fast page mode: version version version (RAS VIL, CAS, address cycling,tPC min.) Standby supply current (RAS Average supply current, during CASbefore-RAS refresh mode: version version version (RAS, cycling, min.) Average Self Refresh Current (CBR cycle with tRAS>TRASSmin., held low, WE=Vcc-0.2V, Address Din=Vcc-0.2V 0.2V) max. Unit Test Condition ICC5 ICC6 ICC7 Capacitance °C,VCC Parameter Input capacitance A10) Input capacitance (RAS, CAS, capacitance (I/O1-I/O8) Symbol Limit Values min. max. Unit Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Characteristics 5)6) °C,VCC Parameter Symbol Limit Values min. max. max. min. max. min. Unit Note common parameters Random read write cycle time precharge time pulse width pulse width address setup time address hold time Column address setup time Column address hold time delay time column address delay time hold time hold time precharge time Transition time (rise fall) Refresh period tRAS tCAS tASR tRAH tASC tCAH tRCD tRAD tRSH tCSH tCRP tREF Read Cycle Access time from Access time from access time Read command setup time Read command hold time Read command hold time referenced output low-Z Output buffer turn-off delay tRAC tCAC tOEA tRCS tRCH tRRH tCLZ tOFF 8,10 Access time from column address Column address lead time tRAL Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Characteristics (cont'd) 5)6) °C,VCC Parameter Symbol Limit Values min. max. max. min. max. min. Unit Note Output buffer turn-off delay from Data delay high data delay high data delay tOEZ tDZO tCDD tODD Write Cycle Write command hold time Write command pulse width Write command setup time tWCH tWCS Write command lead time tRWL Write command lead time tCWL Data setup time Data hold time Data delay tDZC Read-Modify-Write Cycle Read-write cycle time delay time delay time command hold time tRWC tRWD tCWD tOEH Column address delay time tAWD Fast Page Mode Cycle Fast page mode cycle time precharge time Access time from precharge pulse width precharge Delay tCPA tRAS tRHPC 200k 200k 200k Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Characteristics (cont'd) 5)6) °C,VCC Parameter Symbol Limit Values min. max. max. min. max. min. Unit Note Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time precharge tPRWC tCPWD CAS-before-RAS Refresh Cycle setup time hold time precharge time Write precharge time tCSR tCHR tRPC tWRP Write hold time referenced tWRH CAS-before-RAS Counter Test Cycle precharge time tCPT Test Mode hold time Write command setup time Write command hold time tCHRT tWTS tWTH Self Refresh Cycle pulse width precharge time hold time tRASS tRPS tCHS 100k 100k 100k Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Notes: voltages referenced VSS. ICC1, ICC3, ICC4 ICC6 depend cycle rate. ICC1 ICC4 depend output loading. Specified values measured with output open. Address changed once less while VIL. case ICC4 changed once less during fast page mode cycle (tPC). initial pause required after power-up followed cycles which least cycle refresh cycle, before proper device operation achieved. case using internal refresh counter, minimum CAS-before-RAS initialization cycles instead cycles required. measurements assume (min.) (max.) reference levels measuring timing input signals. Transition times also measured between VIL. Measured with load equivalent loads Operation within tRCD (max.) limit ensures that tRAC (max.) met. tRCD (max.) specified reference point only: tRCD greater than specified tRCD (max.) limit, then access time controlled tCAC. 10)Operation within tRAD (max.) limit ensures that tRAC (max.) met. tRAD (max.) specified reference point only: tRAD greater than specified tRAD (max.) limit, then access time controlled tAA. 11)Either tRCH tRRH must satisfied read cycle. 12)tOFF (max.) tOEZ (max.) define time which outputs achieve open-circuit condition referenced output voltage levels. 13)Either tDZC tDZO must satisfied. 14)Either tCDD tODD must satisfied. 15)tWCS, tRWD, tCWD, tAWD tCPWD restrictive operating parameters. They included data sheet electrical characteristics only. tWCS tWCS (min.), cycle early write cycle will remain open-circuit (high impedance) through entire cycle; tRWD tRWD (min.), tCWD tCWD (min.), tAWD tAWD (min.) tCPWD tCPWD (min.) cycle read-write cycle pins will contain data read from selected cells. neither above sets conditions satisfied, condition pins access time) indeterminate. 16)These parameters referenced leading edge early write cycles leading edge read-write cycles. 17)When using Self Refresh mode, following refresh operations must performed ensure proper DRAM operation: addresses being refreshed evenly distributed manner over refresh interval using refresh cycles, then only cycle must performed immediately after exit from Self Refresh. addresses being refreshed other manner (ROR Distributed/Burst; CBR-Burst) over refresh interval, then full refreshes must performed immediately before entry immediately after exit from Self Refresh. Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tCSH tRCD tRSH tCAS tRAL tCRP tRAD tASR tASC AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA tCAH Column tASR AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA Address AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA tRCH tRAH tRCS tRRH tOEA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA tDZC tDZO tCDD tODD tCAC tCLZ tOEZ AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAA (Inputs) AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA tOFF (Outputs) Valid Data tRAC AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA Read Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tCSH tRCD tRSH tCAS tRAL tCAH Column tCRP tRAD tASR tASC AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA tASR AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA Address AAAAAAA AAAAAAA tRAH tWCS tCWL AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA tWCH tRWL (Inputs) Valid Data (Outputs) AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA Write Cycle (Early Write) Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tCSH tRCD tRSH tCAS tRAL tCRP tRAD tASR tASC AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA tCAH Column tASR AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA tCWL Address AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA IHAAAAAAAAA AAAAAAAAA tRAH tRWL tOEH AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA tDZO tDZC (Inputs) AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA tODD tOEZ AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAA Valid Data tCLZ tOEA (Outputs) Hi-Z Hi-Z AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA Write Cycle Controlled Write) Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRWC tRAS tCSH tRCD tRSH tCAS tCRP tRAH tASR tCAH tASC tASR Address AAAA AAAA AAAA AAAA AAAA AAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA Column tRAD AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA tCWL tAWD tCWD tRWD tRWL AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAA tRCS tOEA tOEH AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA tDZO tDZC AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA Valid Data AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA (Inputs) tCLZ tCAC tODD tOEZ AAAAAA AAAAAA Data AAAAAA AAAAAA AAAAAA AAAAAA (Outputs) tRAC AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA Read-Write (Read-Modify-Write) Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRASP tRCD tCAS tCAS tRHCP tRSH tCAS tCRP tCSH tRAH tASR tASC tCAH Column tASC tCAH tCAH tASC AAAAAAAAA AAAAAAAAA AAAAAAAAA Column AAAAAAAAA AAAAAAAAA AAAAAAAAA tRCS AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAA tRRH AAAAAAA tASR AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA Address AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA tRAD AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA Column AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA tRCH tRCH tRCS AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA tRCS AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA tCPA tOEA tOEA tCPA tOEA tDZC AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA tDZC tDZO tODD AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA tOFF tDZC tDZO tODD tDZO tCDD tODD AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA tOFF (Inputs) AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA tCAC tCLZ tCAC tCLZ tRAC (Outputs) AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA tOFF tCAC tCLZ tOEZ tOEZ tOEZ AAAAA AAAAA AAAAA Valid AAAAA AAAAA Data AAAAA AAAAA AAAAAA AAAAAA AAAAAA Valid AAAAAA AAAAAA Data AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA Valid AAAAAA AAAAAA Data AAAAAA AAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA FPM1 Fast Page Mode Read Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tRCD tRSH tCAS tCAS tCRP tCAS tRAH tASR AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA tRAL tCAH tASC tASC AAAAAAAAAA AAAAAAAAAA tCAH tASC AAAAAAAAAA AAAAAAAAAA tCAH tASR AAAAAAAAA AAAAAAAAA Address AAAAAAAAAA AAAAAAAAAA AAAAAAAAA Column AAAAAAAAAA Column AAAAAAAAAA Column AAAAAAAAA Column AAAAAAAAAA AAAAAAAAAA AAAAAAAAA AAAAAAAAAA AAAAAAAAAA AAAAAAAAA AAAAAAAAAA AAAAAAAAAA AAAAAAAAA tRAD tWCS tCWL tWCH tWCS AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA tCWL tWCH tWCS AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA tCWL tRWL AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA tWCH AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA (Inputs) AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA AAAAAAAAAAA Valid Data Valid Data Valid Data AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA (Outputs) AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA HI-Z FPM2 Fast Page Mode Early Write Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tCPWD tCWD tAWD tOEA tCPWD tCWD tOEA tCAH tRWD tCWD tAWD tOEA tCAH tDZC tCLZ tDZO tCSH Column tASC tCAC AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA Data tOEH tOEZ AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA Column Address tCLZ AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tOEH Data AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tCAH tCPA Column tCLZ tCAC AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tOEH Data tOEZ AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tRAL tRWL tCWL AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tCRP tASR tODD tCAS AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tASC tCWL tDZC tPRWC tCAS tRAS tODD tOEZ tAWD tASC tCPA tDZC AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tCWL AAAAAA AAAAAA AAAAAA AAAAAA tODD tCAS (Inputs) Fast Page Mode Read-Modify-Write Cycle Semiconductor Group (Outputs) Address AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA tASR tRAD tRAH AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tRCD tRCS tRAC Data AAAAA AAAAA AAAAA Data AAAAA AAAAA AAAAA Data AAAAA AAAAA AAAAA tRSH 5117800BSJ-50/-60/-70 8-DRAM tRAS tCRP tRPC AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA tRAH tASR tASR Address AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA (Outputs) AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA HI-Z RAS-Only Refresh Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tRPC tCSR tCHR tRPC tCRP AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tWRP tWRH AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA tOEZ tCDD (Inputs) tODD (Outputs)VOL HI-Z tOFF AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA WL10 CAS-Before-RAS Refresh Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tRAS tRCD tRSH tCHR tCRP tRAD tASC tASR tRAH AAAAA AAAAA AAAAA AAAAA tWRP tCAH tWRH tASR Address AAAAAAA IHAAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA Column tRCS AAAAAAAAAAAAAAAA IHAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA tRRH AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tOEA AAAAAAAAAAAAAAAAAAAAAAAAAAAA IHAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA tDZC tCDD tDZO tODD tCAC tCLZ AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA (Inputs) AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA tOFF tOEZ Valid Data tRAC (Outputs) AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA HI-Z WL11 Hidden Refresh Cycle (Read) Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tRAS tRCD tRSH tCHR tCRP tRAD tRAH tASR tASC tCAH tASR Address AAAAAAA IHAAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAA AAAAAA AAAAA AAAAA Column AAAAA AAAAA AAAAA tWCS tWRP tWRH tWCH AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA (Input) AAAAAAAAAAAAAAA IHAAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAA Valid Data (Output) HI-Z AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA WL12 Hidden Refresh Cycle (Early Write) Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRASS tRPS tRPC tCSR tCHS tCRP AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA tWRP tWRH AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAA tCDD (Inputs) tODD tOEZ (Outputs) HI-Z tOFF AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA WL13 before Self Refresh Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS Read Cycle: tCSR tCHR tRSH tCAS tRAL tASC Address tCAH tCAC tASR Column tWRP AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA tRRH AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA IHAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAA tWRH AAAAAAAAAAAAAA tRCS tOEA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA tRCH tDZC (Inputs) tODD tDZO tCLZ AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA tCDD tOFF tOEZ Data AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA (Outputs) tWRP Write Cycle: AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA AAAAAAAAAAAA tWCS AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAA tWCH tRWL tCWL tWRH (Inputs) (Outputs) Data HI-Z CAS-Before-RAS Refresh Counter Test Cycle Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM tRAS tRPC tCSR tCHR tRPC tCRP AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA tASR tRAH AAAAAAAAAAAAAAAAAAAAAAAAAAA Address IHAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA tWTS tWTH AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAA (Inputs) tODD HI-Z tCDD tOEZ (Outputs) AAAAAAAAAAAAAAAAAAAAAAA OHAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA HI-Z tOFF WL15 Test Mode Entry Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Test Mode 5117800BSJ organized internally 16-bits, test mode cycle using compression used improve test time. Note that version test time reduced test pattern. test mode "write" data from each written into blocks simultaneously (all test mode "read" each output used indicating test mode result. internal bits equal, would indicate "1". they were equal, would indicate "0". WCBR cycle (WE, before RAS) puts device into test mode. exit from test mode, "CAS before refresh", "RAS only refresh" "Hidden refresh" used. Refresh during test mode operation performed normal read cycles WCBR refresh cylces. addresses through have kept high perform testmode entry cycle. other addresses don't care. Semiconductor Group 5117800BSJ-50/-60/-70 8-DRAM Package Outlines Plastic Package P-SOJ-28-3 (400 mil) (Small Outline J-lead, SMD) min. 3.75 -0.5 1.27 0.51 -0.13 0.81max 0.18 0.25 11.18 +0.13 0.18 10.16 +0.13 GPJ05699 18.54 Index Marking -0.25 Does include plastic metal protrusion 0.15 max. side Semiconductor Group Other recent searchesV-650 - V-650 V-650 Datasheet uPD444001 - uPD444001 uPD444001 Datasheet SIGC18T60SN - SIGC18T60SN SIGC18T60SN Datasheet HS2678RECH61H - HS2678RECH61H HS2678RECH61H Datasheet HS2678RECH61HE - HS2678RECH61HE HS2678RECH61HE Datasheet ENN8257 - ENN8257 ENN8257 Datasheet CPH6901 - CPH6901 CPH6901 Datasheet DSS-4832 - DSS-4832 DSS-4832 Datasheet AN-9043 - AN-9043 AN-9043 Datasheet ACE9030 - ACE9030 ACE9030 Datasheet
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