ADE-208-1534E 6th. Edition 2002 Features Capable -4.5 gate drive
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HAT1072H
ADE-208-1534E 6th. Edition 2002 Features
Capable -4.5 gate drive drive current High density mounting on-resistance RDS(on)
Outline
LFPAK
Source Gate Drain
HAT1072H
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Tc=25°C Symbol VDSS VGSS ID(pulse) Tstg
Note2 Note1
Ratings -20/+10 -160
Unit
Rev.5, 2002, page
HAT1072H
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) -0.5 9500 1300 0.87 -2.0 1.14 Unit Test Conditions -20,+10
Note3 Note3 Note3
-4.5
Note3
diF/
Rev.5, 2002, page
HAT1072H
Main Characteristics
Power Temperature Derating -500 Maximum Safe Operation Area
-100
Channel Dissipation
Drain Current
Operation this area limited DS(on) -0.1 -0.01 -0.1 -0.3 -100 Drain Source Voltage 25°C shot Pulse
(°C)
Case Temperature
Typical Output Characteristics -3.5 Pulse Test -2.8
Typical Transfer Characteristics Pulse Test
-2.6
Drain Current
Drain Current
75°C
25°C -25°C
-2.2
Drain Source Voltage
Gate Source Voltage
Rev.5, 2002, page
HAT1072H
Drain Source Saturation Voltage Gate Source Voltage
DS(on)
Pulse Test
-0.16
Drain Source State Resistance DS(on)
-0.20
Static Drain Source State Resistance Drain Current Pulse Test -4.5
Drain Source Voltage
-0.12 Gate Source Voltage
-0.08
-0.04
-0.1 -0.2 -0.5 -100 Drain Current
Static Drain Source State Resistance DS(on)
Pulse Test
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature
Forward Transfer Admittance Drain Current -25°C 25°C Pulse Test -0.1 -0.3 -100 75°C
-4.5
Case Temperature (°C)
Drain Current
Rev.5, 2002, page
HAT1072H
Body-Drain Diode Reverse Recovery Time 1000 30000 10000 3000 Coss 1000 Drain Source Voltage Crss Ciss Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
-0.1 -100 25°C -0.3 -100 Reverse Drain Current
Capacitance (pF)
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
d(off)
Drain Source Voltage
Gate Source Voltage
d(on) duty
Gate Charge (nc)
-0.1 -0.2 -0.5 Drain Current
Rev.5, 2002, page
HAT1072H
Reverse Drain Current Souece Drain Voltage
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 4.17°C/ 25°C
0.03
0.02
0.01
Pulse Width
Rev.5, 2002, page
HAT1072H
Switching Time Test Circuit Monitor D.U.T. Vout td(on) td(off) Vout Monitor Switching Time Waveform
Rev.5, 2002, page
HAT1072H
Package Dimensions
January, 2002
Unit:
0.25 -0.03
+0.05
3.95
-0.3
+0.1
+0.03 0.07 -0.04
0.75 1.27 0.10 0.40 0.06
0.25
-0.20
+0.25
0.20 -0.03
+0.05
Hitachi Code JEDEC JEITA Mass (reference value)
LFPAK 0.080
Rev.5, 2002, page
HAT1072H
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
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Hitachi, Ltd.
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89)
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
Colophon
Rev.5, 2002, page
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