Dual Quad, 8MHz 60MHz, Noise Operational Amplifiers noise high pe

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Dual Quad, 8MHz 60MHz, Noise Operational Amplifiers noise high pe

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HA-5102, HA-5104, HA-5112, HA-5114
Dual Quad, 8MHz 60MHz, Noise Operational Amplifiers
noise high performance words describing HA-5102 HA-5104, HA-5112, HA-5114. These general purpose amplifiers offer array dynamic specifications ranging from 3V/µs slew rate 8MHz bandwidth (5102/04) 20V/µs slew rate 60MHz gain-bandwidth-product (HA-5112/14). Complementing these outstanding parameters very noise specification 4.3nV/Hz 1kHz. Fabricated using Harris high frequency process, these operational amplifiers also offer excellent input specifications such 0.5mV offset voltage 30nA offset current. Complementing these specifications 108dB open loop gain 60dB channel separation. Consuming very modest amount power (90mW/ package duals 150mW/package quads), HA-5102/04/12/14 also provide 15mA output current. This impressive combination features make this series amplifiers ideally suited designs ranging from audio amplifiers active filters most demanding signal conditioning instrumentation circuits. These operational amplifiers available dual quad form with industry standard pinouts allowing form immediate interchangeability with most other dual quad operational amplifiers HA-5102 HA-5112 Dual, Comp. Dual, Uncomp. HA-5104 HA-5114 Quad, Comp. Quad, Uncomp.
November 1996
Features
Noise 4.3nV/Hz Bandwidth. 8MHz (Compensated) 60MHz (Uncompensated) Slew Rate 3V/µs (Compensated) 20V/µs (Uncompensated) Offset Voltage. 0.5mV Available Duals Quads
Applications
Applications High Active Filters Audio Amplifiers Instrumentation Amplifiers Integrators Signal Generators Further Design Ideas, Application Note AN554
Refer /883 data sheet military product.
Pinouts
(See Ordering Information next page) HA-5102 (METAL CAN) VIEW
-IN1 OUT2
HA-5102/5112 (PDIP, CERDIP) VIEW
HA-5102/5112 (SOIC) VIEW
OUT1
OUT1 -IN1 +IN1
OUT2
OUT1 -IN1
+IN1
-IN2 +IN2
-IN2 +IN2 +IN1
+IN2 -IN2
OUT2
HA-5104/5114 (PDIP, CERDIP) VIEW
OUT1 -IN1 +IN1 +IN2 -IN2 OUT2
HA5104/5114 (SOIC) VIEW
OUT1 -IN1 +IN1
OUT4
OUT4 -IN4 +IN4
-IN4 +IN4
+IN2 +IN3 -IN3 OUT3 -IN2 OUT2
+IN3 -IN3 OUT3
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1996
File Number
2925.2
3-419
HA-5102, HA-5104, HA-5112, HA-5114 Ordering Information
PART NUMBER HA2-5102-2 HA2-5102-5 HA3-5102-5 HA7-5102-2 HA7-5102-5 HA9P5102-5 HA9P5102-9 HA1-5104-2 HA1-5104-5 HA3-5104-5 HA9P5104-5 HA9P5104-9 HA3-5112-5 HA7-5112-2 HA9P5112-5 HA9P5112-9 HA1-5114-2 HA1-5114-5 HA3-5114-5 HA9P5114-5 HA9P5114-9 TEMP. RANGE (oC) PACKAGE Metal Metal PDIP CERDIP CERDIP SOIC SOIC CERDIP CERDIP PDIP SOIC SOIC PDIP CERDIP SOIC SOIC CERDIP CERDIP PDIP SOIC SOIC T8.C T8.C E8.3 F8.3A F8.3A M16.3 M16.3 F14.3 F14.3 E14.3 M16.3 M16.3 E8.3 F8.3A M16.3 M16.3 F14.3 F14.3 E14.3 M16.3 M16.3 PKG.
3-420
HA-5102, HA-5104, HA-5112, HA-5114
Absolute Maximum Ratings
Supply Voltage Between Terminals Differential Input Voltage. Input Voltage. ±VSUPPLY Output Short Circuit Duration (Note Indefinite
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) Metal Package Lead PDIP Package Lead CERDIP Package SOIC Package (HA-5102, HA-5112) Lead CERDIP Package Lead PDIP Package SOIC Package (HA-5104, HA-5114) Maximum Junction Temperature (Note Ceramic Package) 175oC Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Operating Conditions
Temperature Range HA-5102/5104/5112/5114-2 -55oC 125oC HA-5102/5104/5112/5114-5 75oC HA-5102/5104/5112/5114-9 -40oC 85oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: Maximum power dissipation, including output load, must designed maintain maximum junction temperature below 175oC hermetic packages, below 150oC plastic packages. measured with component mounted evaluation board free air. amplifier shorted ground indefinitely. VSUPPLY ±15V, Unless Otherwise Specified HA-5102-2, HA-5112-2, PARAMETER INPUT CHARACTERISTICS Offset Voltage Full Offset Voltage Average Drift Bias Current Full Full Offset Current Full Input Resistance Common Mode Range TRANSFER CHARACTERISTICS Large Signal Voltage Gain (VOUT ±5V, Common Mode Rejection Ratio (VCM ±5.0V) Small Signal Bandwidth HA-5102/5104 Gain Bandwidth Product HA-5112/5114 Channel Separation (Note Full Full kV/V kV/V Full µV/oC TEMP. (oC) HA-5104-2, HA-5114-2, HA-5102-9 HA-5112-9 HA-5104-9 HA-5114-9 UNITS
Electrical Specifications
3-421
HA-5102, HA-5104, HA-5112, HA-5114
Electrical Specifications
VSUPPLY ±15V, Unless Otherwise Specified (Continued) HA-5102-2, HA-5112-2, PARAMETER OUTPUT CHARACTERISTICS Output Voltage Swing 10k) Output Current (VOUT ±5V) Full Power Bandwidth (Note HA-5102/5104 HA-5112/5114 Output Resistance STABILITY Minimum Stable Closed Loop Gain HA-5102/5104 HA-5112/5114 TRANSIENT RESPONSE (Note Rise Time HA-5102/5104 HA-5112/5114 Overshoot HA-5102/5104 HA-5112/5114 Slew Rate HA-5102/5104 HA-5112/5114 Settling Time (Note HA-5102/5104 HA-5112/5114 NOISE CHARACTERISTICS (Note Input Noise Voltage 10Hz 1kHz Input Noise Current 10Hz 1kHz Broadband Noise Voltage 30kHz nVRMS 0.57 0.57 0.57 0.57 pA/Hz pA/Hz nV/Hz nV/Hz V/µs V/µs Full Full Full Full Full TEMP. (oC) HA-5104-2, HA-5114-2, HA-5102-9 HA-5112-9 HA-5104-9 HA-5114-9 UNITS
3-422
HA-5102, HA-5104, HA-5112, HA-5114
Electrical Specifications
VSUPPLY ±15V, Unless Otherwise Specified (Continued) HA-5102-2, HA-5112-2, PARAMETER TEMP. (oC) HA-5104-2, HA-5114-2, HA-5102-9 HA-5112-9 HA-5104-9 HA-5114-9 UNITS
POWER SUPPLY CHARACTERISTICS Supply Current (All Amps) Power Supply Rejection Ratio ±5V) NOTES: Channel separation value referred input amplifier. Input test conditions are: 10kHz; 100mVPEAK; Slew Rate Full power bandwidth guaranteed equation: Full power bandwidth PEAK Refer Test Circuits section data sheet. Settling time measured 0.1% final value input step, HA-5112/5114, input step, HA-5102/5104. limits these parameters guaranteed based characterization, reflect lot-to-lot variation. Full
Test Circuits Waveforms
HA-5102, HA-5104
50pF
50pF
OUTPUT INPUT 200mV INPUT
OUTPUT
Vertical 5V/Div., Horizontal 5µs/Div. FIGURE LARGE SIGNAL RESPONSE CIRCUIT
Vertical 40mV/Div., Horizontal 50ns/Div. FIGURE SMALL SIGNAL RESPONSE CIRCUIT
3-423
HA-5102, HA-5104, HA-5112, HA-5114 Test Circuits Waveforms
(Continued) HA-5112, HA-5114
+0.5V OUTPUT INPUT -0.5V OUTPUT INPUT 200mV
Input 0.5V/Div., Output 5V/Div., Time 50ns/Div.
Input 10mV/Div., Output 50mV/Div., Time 50ns/Div.
+15V 2N4416 (NOTE +15V 1.8k 50pF (NOTE VOUT OSCILLOSCOPE
-15V 50pF
NOTES: (HA-5102/5104), (HA-5112/5114). Feedback summing resistors should 0.1% matched. NOTE: +10. FIGURE LARGE SMALL SIGNAL RESPONSE CIRCUIT +10) Clipping diodes optional, HP5082-2810 recommended. FIGURE SETTLING TIME CIRCUIT
3-424
HA-5102, HA-5104, HA-5112, HA-5114 Simplified Schematic
OUTPUT
V+INPUT -INPUT
Typical Performance Curves
±15V, 25oC HIGH TYPICAL NOISE CURRENT (pA/Hz) ±15V, 25oC
NOISE VOLTAGE (nV/Hz)
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE INPUT NOISE VOLTAGE DENSITY
FIGURE INPUT NOISE CURRENT DENSITY
3-425
HA-5102, HA-5104, HA-5112, HA-5114 Typical Performance Curves
(Continued)
±15V, 25oC, 50µV/Div., 1s/Div., 1000V/V Input Noise 0.232µVP-P FIGURE 0.1Hz 10Hz NOISE
±15V, 25oC, 500µV/Div., 1s/Div., 1000V/V Total Output Noise 2.075µVP-P FIGURE 0.1Hz 1MHz NOISE
±15V INPUT OFFSET VOLTAGE (mV) OFFSET VOLTAGE (mV)
25oC
SUPPLY VOLTAGE (±V)
TEMPERATURE (oC)
FIGURE TEMPERATURE
±15V INPUT BIAS CURRENT (nA)
FIGURE
±15V
INPUT OFFSET CURRENT (nA)
TEMPERATURE (oC)
TEMPERATURE (oC)
FIGURE TEMPERATURE
FIGURE IBIAS TEMPERATURE
3-426
HA-5102, HA-5104, HA-5112, HA-5114 Typical Performance Curves
TOTAL SUPPLY CURRENT (mA) ±15V, IOUT TOTAL SUPPLY CURRENT (mA)
(Continued)
25oC, IOUT
TEMPERATURE (oC)
SUPPLY VOLTAGE (±V)
FIGURE TEMPERATURE (HA-5104/14)
FIGURE (HA-5102/12)
OPEN LOOP VOLTAGE GAIN (105V/V)
OPEN LOOP VOLTAGE GAIN (105V/V)
±15V, ±10V,
±10V, ±15V, 125oC
25oC
-55oC
TEMPERATURE (oC)
LOAD RESISTANCE
FIGURE AVOL TEMPERATURE
25oC, OUTPUT SWING (±V)
FIGURE AVOL LOAD RESISTANCE
25oC,
OPEN LOOP GAIN (kV/V)
SUPPLY VOLTAGE (±V)
SUPPLY VOLTAGE (±V)
FIGURE AVOL
FIGURE VOUT
3-427
HA-5102, HA-5104, HA-5112, HA-5114 Typical Performance Curves
±15V, 25oC
(Continued)
OUTPUT CURRENT (mA)
CMRR (dB)
VOUT -15V
VOUT +15V
TIME (SECONDS)
-100
100K
FREQUENCY (Hz)
FIGURE OUTPUT SHORT CIRCUIT CURRENT TIME
FIGURE CMRR FREQUENCY
POWER SUPPLY REJECTION (dB)
±15V, 50pF
-55oC GAIN
+PSRR -PSRR
125oC GAIN
125oC PHASE -55oC PHASE 100K FREQUENCY (Hz) -135
-100
100K
-225
FREQUENCY (Hz)
FIGURE PSRR FREQUENCY
FIGURE HA-5104/02 UNITY GAIN FREQUENCY RESPONSE
VOLTAGE GAIN (dB)
VOLTAGE GAIN (dB)
AVCL +10, 25oC, 50pF
PHASE SHIFT (DEGREES) HA-5102/5104 GAIN ±15V, 25oC, 50pF
GAIN PHASE SHIFT (DEGREES)
HA-5112/5114 GAIN HA-5112/5114 PHASE
PHASE 100K 100M
HA-5102/5104 PHASE 100K FREQUENCY (Hz)
100M
FREQUENCY (Hz)
FIGURE HA-5112/14 FREQUENCY RESPONSE
FIGURE OPEN LOOP GAIN FREQUENCY
3-428
PHASE SHIFT (DEGREES)
VOLTAGE GAIN (dB)
HA-5102, HA-5104, HA-5112, HA-5114 Typical Performance Curves
OVERSHOOT ±15V, 25oC, SLEW RATE (NORMALIZED)
(Continued)
50pF, ±15V
LOAD CAPACITANCE (pF)
TEMPERATURE (oC)
FIGURE SMALL SIGNAL OVERSHOOT CLOAD
FIGURE SLEW RATE TEMPERATURE
50pF, ±15V RISE TIME (NORMALIZED)
TEMPERATURE (oC)
FIGURE RISE TIME TEMPERATURE
3-429
HA-5102, HA-5104, HA-5112, HA-5114 Characteristics
DIMENSIONS: 98.4 mils 67.3 mils mils 2500µm 1710µm 483µm METALLIZATION: Type: Thickness: PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, Phos.) Silox Thickness: Nitride Thickness: SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5102
V+IN1 -IN1 OUT1
+IN2
-IN2
OUT2
HA-5112
V+IN1 -IN1 OUT1
+IN2
-IN2
OUT2
3-430
HA-5102, HA-5104, HA-5112, HA-5114 Characteristics
DIMENSIONS: mils mils mils 2420µm 2530µm 483µm METALLIZATION: Type: Thickness: PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, Phos.) Silox Thickness: Nitride Thickness: SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5104
+IN2 +IN1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+IN3
+IN4
HA-5114
+IN2 +IN1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+IN3
+IN4
3-431

Dual Quad, 8MHz 60MHz, Noise Operational Amplifiers noise high pe

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