REJ03G0378-0200Z Rev.2.00 Jun.17.2004 on-resistance leakage curre
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H5N5012P
REJ03G0378-0200Z Rev.2.00 Jun.17.2004
on-resistance leakage current High speed switching Built-in fast recovery diode
Outline
TO-3P
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse) IAPNote3 Note2 ch-c Tstg
Note1
Ratings 0.833 +150
Unit °C/W
Rev.2.00, Jun.17.2004, page
H5N5012P
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero Gate voltage drain current Gate Source leak current Gate Source cutoff voltage Forward transfer admittance Static Drain Source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate Source charge Gate Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.180 3600 ±0.1 0.225 Unit Test conditions 12.5 Note4 12.5 VNote4 12.5 Note4 diF/dt A/µs
Rev.2.00, Jun.17.2004, page
H5N5012P
Package Dimensions
January, 2003
15.6
Unit:
14.9
19.9
18.0
5.45
5.45
Package Code JEDEC JEITA Mass (reference value) TO-3P Conforms
Ordering Information
Part Name H5N5012P-E Quantity Plastic magazine Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00, Jun.17.2004, page
Sales Strategic Planning Div.
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