REJ03G0175-0200Z Rev.2.00 Jul.02.2004 on-resistance leakage curre

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REJ03G0175-0200Z Rev.2.00 Jul.02.2004 on-resistance leakage curre

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H5N5016PL
REJ03G0175-0200Z Rev.2.00 Jul.02.2004
on-resistance leakage current High speed switching Built-in fast recovery diode
Outline
TO-3PL
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel case Thermal Impedance Channel temperature Storage temperature Notes duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 PchNote ch-c Tstg Ratings +150 Unit
Rev.2.00, Jul.02.2004, page
H5N5016PL
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) 0.108 5300 1.05 ±0.1 0.128 Unit Test Conditions Note4 Note4 Note4 diF/dt A/µs
Rev.2.00, Jul.02.2004, page
H5N5016PL
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation 25°C)
this area
Operation limited RDS(on) 0.03 0.01 25°C
(1shot)
(°C)
Case Temperature
1000 Drain Source Voltage Typical Transfer Characteristics
Typical Output Characteristics Pulse Test
Pulse Test
Drain Current
Drain Current
25°C 75°C -25°C Gate Source Voltage
Drain Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on)
Pulse Test
Drain Source State Resistance RDS(on)
Static Drain Source State Resistance Drain Current
0.05
Gate Source Voltage
0.02 Pulse Test Drain Current
0.01
Rev.2.00, Jul.02.2004, page
H5N5016PL
Static Drain Source State Resistance Temperature Pulse Test Forward Transfer Admittance Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
-25°C
25°C 75°C
(°C)
Pulse Test
Case Temperature
Drain Current
Body-Drain Diode Reverse Recovery Time 1000
Reverse Recovery Time (ns)
10000 5000
Typical Capacitance Drain Source Voltage Ciss
Capacitance (pF)
2000 1000
Coss
25°C Reverse Drain Current Dynamic Input Characteristics
Drain Source Voltage
Crss
1000
Switching Time (ns)
Drain Source Voltage
Gate Source Voltage
10000
Switching Characteristics duty
1000
d(off)
d(on)
Gate Charge
(nC)
Drain Current
Rev.2.00, Jul.02.2004, page
H5N5016PL
Reverse Drain Current Source Drain Voltage
Gate Source Cutoff Voltage VGS(off)
Gate Source Cutoff Voltage Case Temperature 0.1mA Case Temperature (°C) 10mA
Reverse Drain Current
Pulse Test Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 0.5°C/W, 25°C
0.03
0.02 0.01
0.01
Pulse Width
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
Rev.2.00, Jul.02.2004, page
H5N5016PL
Package Dimensions
January, 2003
Unit:
20.0
26.0
20.0
+0.25 -0.1 5.45 +0.25 -0.1
5.45
Package Code JEDEC JEITA Mass (reference value)
TO-3PL
Ordering Information
Part Name H5N5016PL Quantity Plastic case Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00, Jul.02.2004, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, United Kingdom Tel: <44> (1628) 100, Fax: <44> (1628) Renesas Technology Europe GmbH Dornacher Str. D-85622 Feldkirchen, Germany Tel: <49> (89) Fax: <49> (89) Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. #99, Fu-Hsing Rd., Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
2004. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G0175-0200Z Rev.2.00 Jul.02.2004 on-resistance leakage curre

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