REJ03G0164-0200Z Rev.2.00 Dec.04.2003 on-resistance RDS(on) -4.5

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REJ03G0164-0200Z Rev.2.00 Dec.04.2003 on-resistance RDS(on) -4.5

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HAT1069C
REJ03G0164-0200Z Rev.2.00 Dec.04.2003
on-resistance RDS(on) -4.5 High speed switching Capable gate drive High density mounting
Outline
CMFPAK Index band Source Drain Drain Drain Drain Gate
Rev.2.00, Dec.04.2003, page
HAT1069C
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)Note1 Tstg
Note2
Ratings +150
Unit
Notes: duty cycle When using grass epoxy board. (FR4
Rev.2.00, Dec.04.2003, page
HAT1069C
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Notes: Pulse test |yfs| Ciss Coss Crss td(on) td(off) 1380 -0.8 -1.1 -1.1 Unit Test Conditions ±100 ±6.4 -1.5 -4.5 -1.5 -2.5 -1.5 -1.8 -1.5 -4.5 -1.5 0Note3
V(BR)GSS -0.3
Rev.2.00, Dec.04.2003, page
HAT1069C
Main Characteristics
Power Temperature Derating 1600
(mW)
Test Condition: When using glass epoxy board (FR4
Maximum Safe Operation Area -100
25°C shot Pulse
1200
Channel Dissipation
Drain Current
-0.3 -0.1
(°C)
Ambient Temperature
Operation -0.03 this area limited RDS(on) -0.01 -0.03 -0.1 -0.3 -100 Drain Source Voltage
Note When using glass epoxy board (FR4
Typical Output Characteristics -2.2 -4.5 -2.5
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
-1.8
Pulse Test Drain Source Voltage
75°C 25°C -25°C Gate Source Voltage
Rev.2.00, Dec.04.2003, page
HAT1069C
Drain Source Saturation Voltage Gate Source Voltage
VDS(on) (mV)
25°C -200 -4.0
Drain Source State Resistance RDS(on)
-250
Static Drain Source State Resistance Drain Current 1000 Pulse Test 25°C -2.5 -1.8
Drain Source Voltage
-150 -100
-1.5
-4.5
-1.0 Gate Source Voltage
-0.1
Drain Current
Forward Transfer Admittance |yfs|
Drain Source State Resistance RDS(on)
Static Drain Source State Resistance Temperature Pulse Test
-1.8
Forward Transfer Admittance Drain Current Pulse Test -0.1 -0.3 25°C -25°C 75°C
-2.5
-1.5
-1.5
-4.5
-1.5
(°C)
Case Temperature
Drain Current
Rev.2.00, Dec.04.2003, page
HAT1069C
Typical Capacitance Drain Source Voltage 10000
Drain Source Voltage
-10, Gate Charge (nc)
Capacitance (pF)
Ciss 1000 Coss
Crss
Drain Source Voltage
Switching Characteristics 1000
Reverse Drain Current Source Drain Voltage
td(off)
Reverse Drain Current
-4.5
Pulse Test
Switching Time (ns)
td(on)
25°C
-0.1
Drain Current
-100
-0.4
-0.8
-1.2
-1.6
-2.0
Source Drain Voltage
VSDF
Rev.2.00, Dec.04.2003, page
Gate Source Voltage
Dynamic Input Characteristics
HAT1069C
Package Dimensions
January, 2003
Unit:
6-0.2 0.05
0.15 0.05
0.05
0.65 0.65
0.75 0.05
Package Code JEDEC JEITA Mass (reference value)
(0.1)
CMFPAK-6 0.0065
Rev.2.00, Dec.04.2003, page
(0.1)
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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REJ03G0164-0200Z Rev.2.00 Dec.04.2003 on-resistance RDS(on) -4.5

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