REJ03G0118-0100Z Rev.1.00 Oct.01.2003 on-resistance drive current

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REJ03G0118-0100Z Rev.1.00 Oct.01.2003 on-resistance drive current

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H5N2801P
REJ03G0118-0100Z Rev.1.00 Oct.01.2003
on-resistance drive current High speed switching
Outline
TO-3P
Gate Drain (Flange) Source
Rev.1.00, Oct.01.2003, page
H5N2801P
Absolute Maximum Rating
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Symbol VDSS VGSS (pulse)Note1 IAPNote3
Note3
Rating 74.5 0.833 +150
Unit
Note2
Channel case thermal impedance ch-c Channel temperature Storage temperature Tstg
Notes: duty cycle Value 25°C STch 25°C, 150°C
Rev.1.00, Oct.01.2003, page
H5N2801P
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.034 5400 1.10 ±0.1 0.043 1.65 Unit 0Note4 diF/dt A/µs Test condition VNote4 VNote4
Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: Pulse test
Rev.1.00, Oct.01.2003, page
H5N2801P
Main Characteristics
Power Temperature Derating Maximum Safe Operation Area
1000
Channel Dissipation
Drain Current
Operation
this area
limited RDS(on)
(°C) Case Temperature 25°C 1000 Drain Source Voltage
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C Gate Source Voltage
Drain Source Voltage
Rev.1.00, Oct.01.2003, page
H5N2801P
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on)
Pulse Test
Gate Source Voltage
Drain Source State Resistance RDS(on)
Static Drain Source State Resistance Drain Current Pulse Test V,15
0.05
0.02
0.01 Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test 0.08
Forward Transfer Admittance Drain Current -25°C 75°C Pulse Test 25°C
0.06 0.04
0.02
Case Temperature (°C)
Drain Current
Rev.1.00, Oct.01.2003, page
H5N2801P
Body-Drain Diode Reverse Recovery Time 1000
50000 20000
Typical Capacitance Drain Source Voltage Ciss
Reverse Recovery Time (ns)
Capacitance (pF)
10000 5000 2000 1000
Coss
25°C Reverse Drain Current
Crss Drain Source Voltage
Dynamic Input Characteristics
10000
Switching Characteristics duty
Switching Time (ns)
Gate Source Voltage
Drain Source Voltage
1000
td(off)
Gate Charge (nC)
td(on) Drain Current
Rev.1.00, Oct.01.2003, page
H5N2801P
Reverse Drain Current Source Drain Voltage
Gate Source Cutoff Voltage GS(off)
Gate Source Cutoff Voltage Case Temperature 10mA
Reverse Drain Current
Pulse Test
0.1mA
(°C)
Source Drain Voltage
Case Temperature
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
Rev.1.00, Oct.01.2003, page
H5N2801P
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 0.833°C/W, 25°C
0.03
0.02
0.01
Pulse Width
Rev.1.00, Oct.01.2003, page
H5N2801P
Package Dimensions
January, 2003
15.6
Unit:
14.9
19.9
18.0
5.45
5.45
Package Code JEDEC JEITA Mass (reference value) TO-3P Conforms
Rev.1.00, Oct.01.2003, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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REJ03G0118-0100Z Rev.1.00 Oct.01.2003 on-resistance drive current

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