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REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003
Top Searches for this datasheetHAT1047R, HAT1047RJ REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003 Automotive Application Type Code "J") on-resistance Capable -4.5 gate drive High density mounting Outline SOP-8 Source Gate Drain Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1047R HAT1047RJ Avalanche energy HAT1047R HAT1047RJ Channel dissipation Channel temperature Storage temperature Tstg Note2 Symbol VDSS VGSS ID(pulse)Note1 Note3 Ratings -112 Unit Note3 19.6 +150 Notes: duty cycle When using glass epoxy board (FR4 mm), Value 25°C, Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Electrical Characteristics 25°C) Item Symbol 3500 -0.82 -2.5 -1.07 Unit Test Conditions ±100 16V, 125°C Note4 -4.5 Note4 Note4 1.43 Note4 diF/ A/µs Drain source breakdown voltage V(BR)DSS Gate source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1047R HAT1047RJ IGSS IDSS IDSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) Gate source breakdown voltage V(BR)GSS -1.0 Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Main Characteristics Power Temperature Derating Maximum Safe Operation Area -500 -100 Test condition. When using glass epoxy board. (FR4 mm), 10s) Channel Dissipation Drain Current Operation this area limited DS(on) -0.1 25°C shot Pulse Ambient Temperature (°C) -0.01 -0.1 -0.3 -100 Drain Source Voltage Note When using glass epoxy board. Typical Output Characteristics Typical Transfer Characteristics Pulse Test Pulse Test Drain Current Drain Current 75°C 25°C -25°C Drain Source Voltage Gate Source Voltage Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage DS(on) (mV) -160 Pulse Test Drain Source State Resistance DS(on) -200 Static Drain Source State Resistance Drain Current Pulse Test -4.5 -120 Gate Source Voltage -100 -200 Drain Current Static Drain Source State Resistance DS(on) Forward Transfer Admittance |yfs| Static Drain Source State Resistance Temperature Pulse Test Forward Transfer Admittance Drain Current 25°C 75°C -25°C Pulse Test -4.5 -2,-5 Case Temperature (°C) Drain Current Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Body-Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) Typical Capacitance Drain Source Voltage 30000 10000 Ciss Capacitance (pF) 1000 Coss Crss 25°C -100 Reverse Drain Current Drain Source Voltage Dynamic Input Characteristics Switching Time (ns) 1000 Switching Characteristics duty Drain Source Voltage Gate Source Voltage d(off) d(on) Gate Charge (nc) -0.1 -0.2 -0.5 Drain Current Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Maximum Avalanche Energy Channel Temperature Derating Repetitive Avalanche Energy (mJ) Reverse Drain Current Source Drain Voltage duty Reverse Drain Current Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage Channel Temperature (°C) Avalanche Test Circuit Avalanche Waveform Monitor Monitor VDSS VDSS (BR)DSS Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance 0.05 0.01 0.02 0.01 f(t) 83.3°C/W, 25°C When using glass epoxy board (FR4 0.001 0.0001 Pulse Width 1000 1000 Switching Time Test Circuit Monitor D.U.T. Vout Monitor Switching Time Waveform Vout td(on) td(off) Rev.5.00, Aug.27.2003, page HAT1047R, HAT1047RJ Package Dimensions January, 2003 Unit: 4.90 3.95 *0.22 0.03 0.20 0.03 1.75 0.75 6.10 0.30 0.10 1.08 0.67 0.14 0.04 0.11 1.27 0.60 0.20 *0.42 0.08 0.40 0.06 0.15 0.25 *Dimension including plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms 0.085 Rev.5.00, Aug.27.2003, page Sales Strategic Planning Div. Keep safety first your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. 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