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REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003


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HAT1047R, HAT1047RJ
REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003
Automotive Application Type Code "J") on-resistance Capable -4.5 gate drive High density mounting
Outline
SOP-8
Source Gate Drain
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1047R HAT1047RJ Avalanche energy HAT1047R HAT1047RJ Channel dissipation Channel temperature Storage temperature Tstg
Note2
Symbol VDSS VGSS ID(pulse)Note1
Note3
Ratings -112
Unit
Note3
19.6 +150
Notes: duty cycle When using glass epoxy board (FR4 mm), Value 25°C,
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Electrical Characteristics
25°C)
Item Symbol 3500 -0.82 -2.5 -1.07 Unit Test Conditions ±100 16V, 125°C Note4 -4.5 Note4 Note4 1.43 Note4 diF/ A/µs
Drain source breakdown voltage V(BR)DSS Gate source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1047R HAT1047RJ IGSS IDSS IDSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off)
Gate source breakdown voltage V(BR)GSS -1.0
Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area -500 -100
Test condition. When using glass epoxy board. (FR4 mm), 10s)
Channel Dissipation
Drain Current
Operation this area limited DS(on) -0.1 25°C shot Pulse
Ambient Temperature (°C)
-0.01 -0.1 -0.3 -100 Drain Source Voltage Note When using glass epoxy board.
Typical Output Characteristics Typical Transfer Characteristics
Pulse Test
Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage DS(on) (mV)
-160
Pulse Test
Drain Source State Resistance DS(on)
-200
Static Drain Source State Resistance Drain Current Pulse Test -4.5
-120
Gate Source Voltage
-100 -200 Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current 25°C 75°C -25°C Pulse Test
-4.5
-2,-5
Case Temperature (°C)
Drain Current
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
Typical Capacitance Drain Source Voltage 30000 10000 Ciss
Capacitance (pF)
1000 Coss Crss
25°C -100 Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Time (ns)
1000
Switching Characteristics duty
Drain Source Voltage
Gate Source Voltage
d(off)
d(on)
Gate Charge (nc)
-0.1 -0.2
-0.5
Drain Current
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Maximum Avalanche Energy Channel Temperature Derating
Repetitive Avalanche Energy (mJ)
Reverse Drain Current Source Drain Voltage
duty
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0
Source Drain Voltage
Channel Temperature (°C)
Avalanche Test Circuit
Avalanche Waveform
Monitor
Monitor
VDSS VDSS
(BR)DSS
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
0.05
0.01
0.02 0.01
f(t) 83.3°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
Pulse Width
1000
1000
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform
Vout td(on)
td(off)
Rev.5.00, Aug.27.2003, page
HAT1047R, HAT1047RJ
Package Dimensions
January, 2003
Unit:
4.90
3.95
*0.22 0.03 0.20 0.03
1.75
0.75
6.10 0.30
0.10
1.08
0.67
0.14 0.04
0.11
1.27
0.60 0.20
*0.42 0.08 0.40 0.06
0.15 0.25
*Dimension including plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms 0.085
Rev.5.00, Aug.27.2003, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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