REJ03G0067-0100Z Rev.1.00 Aug.29.2003 on-resistance Capable gate

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REJ03G0067-0100Z Rev.1.00 Aug.29.2003 on-resistance Capable gate

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HAT1055R, HAT1055RJ
REJ03G0067-0100Z Rev.1.00 Aug.29.2003
on-resistance Capable gate drive High density mounting Automotive application High temperature leakage guarantee Avalanche rating
Outline
SOP-8
Source Gate Drain
MOS1
MOS2
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Absolute Maximum Ratings
25°C)
Item Symbol Ratings HAT1055R Drain source voltage Gate source voltage Drain current Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: VDSS VGSS (pulse)
Note4 Note4 Note1
Unit HAT1055RJ 2.14 +150
+150
Note2
PchNote3 Tstg
10µs, duty cycle Drive operation: When using glass epoxy board (FR4 mm), Drive operation: When using glass epoxy board (FR4 mm), Value 25°C,
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Symbol V(BR)DSS 1350 -0.85 -2.5 -1.10 Unit -2.5 0Note5 diF/dt A/µs Test Conditions ±100 125°C -2.5 ANote5, -2.5 ANote5, -2.5 ANote5, -4.5
Gate Source breakdown voltage V(BR)GSS Zero gate voltage drain current Zero gate voltage drain current HAT1055R IDSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) td(off) -1.0
HAT1055RJ IDSS
Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage
Body-drain diode reverse recovery time Notes: Pulse test
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Main Characteristics
Power Temperature Derating
Test Condition: When using glass epoxy board (FR4
-100 -0.3
Channel Dissipation
Drain Current
Maximum Safe Operation Area
-0.1 Operation
this area
(°C)
Ambient Temperature
-0.03 limited DS(on) -0.01 25°C -0.003 shot Pulse -0.001 -0.1 -0.3 -100 Drain Source Voltage Note When using glass epoxy board (FR4
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test
Pulse Test
-4.5
-3.5
Drain Current
=-2.5 Drain Source voltage
Drain Current
75°C 25°C -25°C
Gate Source Voltage
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Static Drain Source State Resistance Drain Current Pulse Test -4.5
Drain Source Saturation Voltage VDS(on)
Pulse Test -0.8
-0.6
-0.4 -0.2
Drain Source State Resistance RDS(on)
Drain Source Saturation Voltage Gate Source Voltage
0.05
0.02 0.01
-100
Gate Source Voltage
Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.25 Pulse Test 0.20 0.15 -4.5 0.10
Forward Transfer Admittance Drain Current
-25°C 25°C 75°C
0.05
Pulse Test -100
(°C)
-0.1 -0.3
Case Temperature
Drain Current
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Body-Drain Diode Reverse Recovery Time 1000 5000
Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
Capacitance (pF)
25°C
2000 1000 Coss Crss Ciss
-0.1 -0.3
-100
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Gate Source Voltage Switching Time (ns)
1000 -0.1 -0.3 duty Drain Current -100 d(off) d(on)
Drain Source Voltage
-100
Gate Charge (nc)
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Reverse Drain Current Source Drain Voltage
Repetitive Avalanche Energy (mJ)
Maximum Avalanche Energy Channel Temperature Derating duty
Pulse Test
Reverse Drain Current
-0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Channel Temperature (°C) Avalanche Waveform
Avalanche Test Circuit
VDSS VDSS
Monitor
Monitor
(BR)DSS
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform
Vout td(on)
td(off)
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
f(t) 125°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
Pulse Width
1000
10000
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
f(t) 166°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
Pulse Width
1000
10000
Rev.1.00, Aug.29.2003, page
HAT1055R, HAT1055RJ
Package Dimensions
January, 2003
Unit:
4.90
3.95
*0.22 0.03 0.20 0.03
1.75
0.75
6.10 0.30
0.10
1.08
0.67
0.14 0.04
0.11
1.27
0.60 0.20
*0.42 0.08 0.40 0.06
0.15 0.25
*Dimension including plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms 0.085
Rev.1.00, Aug.29.2003, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
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REJ03G0067-0100Z Rev.1.00 Aug.29.2003 on-resistance Capable gate

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