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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
HAT2058R/HAT2058RJ
Silicon Channel Power High Speed Power Switching
ADE-208-934 1st. Edition Mar. 2001 Features
on-resistance Capable gate drive drive current High density mounting Automotive application High temperature leakage guarantee Avalanche rating
Outline
SOP-8
Source Gate Drain
MOS1
MOS2
HAT2058R/HAT2058RJ
Absolute Maximum Ratings 25°C)
Ratings Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Symbol VDSS VGSS (pulse) Channel temperature Storage temperature Notes: Tstg
Note4 Note4 Note2 Note3 Note1
HAT2058R +150
HAT2058RJ +150
Unit
duty cycle Drive operation; When using glass epoxy board (FR4 mm), Drive operation; When using glass epoxy board (FR4 mm), Value 25°C,
HAT2058R/HAT2058RJ
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current HAT2058R Symbol V(BR)DSS V(BR)GSS 0.85 Unit diF/dt A/µs 125°C A*1, A*1, A*1, Test conditions ±100
HAT2058RJ HAT2058R
HAT2058RJ VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) td(off)
Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test
HAT2058R/HAT2058RJ
Main Characteristics
Power Temperature Derating Test condition When using glass epoxy board (FR4 mm), Maximum Safe Operation Area
Drain Current
Channel Dissipation
this area
Operation limited RDS(on)
(°C)
Ambient Temperature
25°C 0.03 shot Pulse Drive Operation 0.01 Drain Source Voltage
Note When using glass epoxy board (FR4
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
Drain Source Voltage
75°C 25°C -25°C
Gate Source Voltage
HAT2058R/HAT2058RJ
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage VDS(on) Pulse Test Drain Source State Resistance RDS(on) Static Drain Source State Resistance Drain Current
ID=4A
0.05
0.02
Pulse Test
0.01
Gate Source Voltage
Drain Current
Static Drain Surce State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test Case Temperature (°C)
Forward Transfer Admittance Drain Current
-25°C 25°C 75°C Pulse Test
Drain Current
HAT2058R/HAT2058RJ
Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) 25°C Capacitance (pF) 5000 2000 1000 Reverse Drain Current Drain Source Voltage Crss Ciss Typical Capacitance Drain Source Voltage
Coss
Dynamic Input Characteristics ID=4A 1000 Switching Time (ns)
Switching Characteristics
Gate Source Voltage
d(off) d(on)
Drain Source Voltage
Gate Charge (nc)
duty Drain Current
HAT2058R/HAT2058RJ
Reverse Drain Current Source Drain Voltage Pulse Test (mJ) duty Maximum Avalanche Energy Channel Temperature Derating
Repetive Avalanche Energy
Reverse Drain Current
Source Drain Voltage
Channel Temperature
(°C)
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS
Monitor
Monitor
(BR)DSS
Switching Time Test Circuit Monitor D.U.T. Vout Monitor Vout td(on) td(off)
Switching Time Waveform
HAT2058R/HAT2058RJ
Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
ch-f(t) ch-f 125°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
1000
10000
Pulse Width
Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
ch-f(t) ch-f 166°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
1000
10000
Pulse Width
HAT2058R/HAT2058RJ
Package Dimensions
Unit:
5.0max. 4.8min.
0~8° 0.15max. 1.27max. 0.4min.
6.2max. 5.8min. 4.0max. 3.8min.
0.25max. 0.19min. 1.75max. 1.35min.
0.51max. 0.33min.
0.15
0.25
0.25max. 0.10min.
0.75max. 1.27typ.
Hitachi Code JEDEC EIAJ
FP-8DA
HAT2058R/HAT2058RJ
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89)
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
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