Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
HAT2137H
Silicon Channel Power Power Switching
ADE-208-1579B Preliminary 3rd. Edition Dec. 2002 Features
Capable gate drive drive current High density mounting on-resistance RDS(on) typ.
Outline
LFPAK
Source Gate Drain
HAT2137H
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)
Note Note Note2 Note1
Ratings
Unit
Tstg
Notes: duty cycle 25°C Value 25°C,
Rev.2, Dec. 2002, page
HAT2137H
Electrical Characteristics
25°C)
Item Symbol 6200 0.84 1.10 Unit Test Conditions ±100 22.5 22.5 22.5 0.44
Note3 Note3 Note3 Note3
Drain source breakdown voltage V(BR)DSS Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off)
22.5
Body-drain diode reverse recovery time Notes: Pulse test
diF/
Rev.2, Dec. 2002, page
HAT2137H
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on) 25°C shot Pulse
0.01 Drain Source Voltage
(°C)
Case Temperature
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
25°C 75°C -25°C
Drain Source Voltage
Gate Source Voltage
Rev.2, Dec. 2002, page
HAT2137H
Drain Source Saturation Voltage Gate Source Voltage Pulse Test Static Drain Source State Resistance Drain Current 1000 Pulse Test Drain Current
VDS(on) (mV)
Gate Source Voltage
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test
Drain Source State Resistance RDS(on)
Drain Source Voltage
Forward Transfer Admittance Drain Current 1000 Pulse Test 75°C 25°C -25°C
Case Temperature (°C)
Drain Current
Rev.2, Dec. 2002, page
HAT2137H
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
Typical Capacitance Drain Source Voltage 10000 3000 1000 Coss Crss Ciss
25°C Reverse Drain Current
Capacitance (pF)
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
1000
Switching Time (ns)
duty
Drain Source Voltage
Gate Source Voltage
td(off)
td(on)
Gate Charge (nc)
Drain Current
Rev.2, Dec. 2002, page
HAT2137H
Reverse Drain Current Source Drain Voltage Maximum Avalanche Energy Channel Temperature Derating
(mJ)
duty
Repetitive Avalanche Energy
Reverse Drain Current
Pulse Test
Source Drain Voltage
Channel Temperature (°C)
Avalanche Test Circuit
Avalanche Waveform IAP2 VDSS VDSS
Monitor
Monitor
(BR)DSS
Rev.2, Dec. 2002, page
HAT2137H
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 4.17°C/ 25°C
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform td(on) td(off)
Vout
Rev.2, Dec. 2002, page
HAT2137H
Package Dimensions
July, 2002
Unit:
0.25 -0.03
+0.05
3.95
-0.3
+0.1
+0.03 0.07 -0.04
0.75 1.27 0.10 *0.40 0.06
0.25
-0.20
+0.25
*0.20 -0.03
+0.05
*Ni/Pd/Au plating
Hitachi Code JEDEC JEITA Mass (reference value)
LFPAK 0.080
Rev.2, Dec. 2002, page
HAT2137H
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-6538-6533/6538-8577 <65>-6538-6933/6538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-2735-9218 <852>-2730-0281
Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan.
Colophon
Rev.2, Dec. 2002, page

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