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Cautions Keep safety first your circuit designs! Renesas Technolo
Top Searches for this datasheetCautions Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. 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Edition Aug. 2002 Features on-resistance RDS(on) typ. drive current gate drive device driven from source Outline LDPAK H7N0312LS H7N0312LM Gate Drain Source Drain H7N0312LD H7N0312LD, H7N0312LS, H7N0312LM Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel Case Thermal Impedance Channel temperature Storage temperature Notes: 10µs, duty cycle Value 25°C Symbol VDSS VGSS ID(pulse) Tstg Note Note Ratings +150 Unit °C/W ch-c Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Electrical Characteristics 25°C) Item Symbol |yfs| Ciss Coss Crss td(on) td(off) 6900 1750 0.92 Unit diF/ 50A/µs Test Conditions ±100 Note1 Note1 Note1 Drain source breakdown voltage V(BR)DSS Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) 42.5 42.5 42.5 0.24 42.5 Note1 Body-drain diode reverse recovery time Notes: Pulse test Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Main Characteristics Power Temperature Derating 1000 Maximum Safe Operation Area Channel Dissipation Drain Current Operation this area limited RDS(on) 25°C 0.01 shot Pulse Drain Source Voltage (°C) Case Temperature Typical Output Characteristics Pulse Test Typical Transfer Characteristics Pulse Test Drain Current Drain Current 75°C 25°C -25°C Gate Source Voltage Drain Source Voltage Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test (mV) Pulse Test Drain Source Voltage VDS(on) Drain Source State Resistance RDS(on) 1000 Drain Current Gate Source Voltage Static Drain Source State Resistance RDS(on) Forward Transfer Admittance |yfs| Static Drain Source State Resistance Temperature Pulse Test (°C) Forward Transfer Admittance Drain Current 1000 Pulse Test 25°C 75°C -25°C Case Temperature Drain Current Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Body-Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) Typical Capacitance Drain Source Voltage Ciss Capacitance (pF) 10000 3000 Coss 1000 Crss 25°C Reverse Drain Current Drain Source Voltage Dynamic Input Characteristics 1000 Switching Characteristics duty Switching Time (ns) Drain Source Voltage Gate Source Voltage d(on) d(off) Gate Charge (nc) Drain Current Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test Source Drain Voltage Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance 25°C 0.05 0.02 puls c(t) 1.0°C/ 25°C 0.03 0.01 Pulse Width Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Package Dimensions H7N0312LD Unit: 10.2 (1.4) 4.44 0.15 0.86 2.54 2.54 11.0 1.37 11.3 10.0 2.49 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM H7N0312LS Unit: 4.44 10.2 (1.4) 10.0 (1.5) (1.5) 1.37 2.49 0.86 2.54 2.54 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (S)-(1) Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM H7N0312LM Unit: 4.44 10.2 (1.4) 10.0 (1.5) (2.3) 1.37 2.49 2.54 2.54 0.86 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (S)-(2) 1.35 Rev.1, Aug. 2002, page H7N0312LD, H7N0312LS, H7N0312LM Disclaimer Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-6538-6533/6538-8577 <65>-6538-6933/6538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-2735-9218 <852>-2730-0281 Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan. 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