Cautions Keep safety first your circuit designs! Renesas Technolo
|
|
|
Top Searches for this datasheet
Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
H7N0401LD, H7N0401LS, H7N0401LM
Silicon Channel High Speed Power Switching
ADE-208-1527C 4th. Edition 2002 Features
on-resistance RDS(on) typ. gate drive devices High Speed Switching
Outline
LDPAK
H7N0401LS H7N0401LM
H7N0401LD
Gate Drain Source Drain
H7N0401LD, H7N0401LS, H7N0401LM
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS (pulse)
Note3 Note1
Ratings
Unit
Note3
PchNote Tstg
+150
Notes: duty cycle Value 25°C Value 25°C,
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) td(off) 9300 1300 0.95 ±0.1 Unit Test Conditions mANote
47.5 VNote 47.5 VGS= VNote 47.5 VGS=4.5 VNote 47.5 0.63 diF/dt 100A/µs
Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area 1000
Drain Current
Channel Dissipation
this area
Operation limited RDS(on)
(°C)
25°C
Case Temperature
Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test
Pulse Test
Drain Current
Drain Current
Drain Source Voltage
75°C
25°C -25°C
Gate Source Voltage
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Saturation Voltage VDS(on)
Pulse Test
Drain Source State Resistance RDS(on)
Gate Source Voltage
1000 Drain Current
Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current 1000 Pulse Test 1000 25°C 75°C -25°C
(°C)
Case Temperature
Drain Current
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Body-Drain Diode Reverse Recovery Time 25°C Typical Capacitance Drain Source Voltage
1000
Reverse Recovery Time (ns)
30000
Capacitance (pF)
10000
Ciss
3000 1000 Coss Crss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
1000
Switching Time (ns)
duty
Drain Source Voltage
Gate Source Voltage
d(off) d(on)
Gate Charge (nc)
Drain Current
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Reverse Drain Current Source Drain Voltage
Repetitive Avalanche Energy (mJ)
Maximum Avalanche Energy Channel Temperature Derating duty
Reverse Drain Current
Pulse Test
Source Drain Voltage
Channel Temperature (°C)
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS
Monitor
Monitor
(BR)DSS
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 1.25°C/ 25°C
0.03
0.01
Pulse Width
Switching Time Test Circuit
Waveform
Monitor D.U.T.
Vout Monitor Vout td(on) td(off)
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
Package Dimensions
January, 2002
Unit:
(1.4)
4.44 0.15
10.2
11.3
10.0
1.27 0.86 0.76 2.54 2.54
11.0
2.59
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK
Rev.3, 2002, page
H7N0401LD, H7N0401LS, H7N0401LM
January, 2002
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(1.5)
1.27
2.54
0.86
2.54
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(1)
January, 2002
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(2.3)
1.27 2.54
0.86
2.54
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(2) 1.35
Rev.3, 2002, page
0.15
H7N0401LD, H7N0401LS, H7N0401LM
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-6538-6533/6538-8577 <65>-6538-6933/6538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-2735-9218 <852>-2730-0281
Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan.
Colophon
Rev.3, 2002, page
Other recent searches
RVA-2500 - RVA-2500 RVA-2500 Datasheet
PMK30EP - PMK30EP PMK30EP Datasheet
LSI20320-R - LSI20320-R LSI20320-R Datasheet
CSTCE12M0G15L - CSTCE12M0G15L CSTCE12M0G15L Datasheet
2SC5810 - 2SC5810 2SC5810 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
