FRFET FQPF9N50CF 500V N-Channel MOSFET Features 50
|
|
|
Top Searches for this datasheet
FQPF9N50CF 500V N-Channel MOSFET
FRFET
FQPF9N50CF
500V N-Channel MOSFET
Features
500V, RDS(on) 0.85 @VGS gate charge (typical Crss (typical 24pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based half bridge topology.
TO-220F
FQPF Series
Absolute Maximum Ratings
Symbol
VDSS VGSS dv/dt TSTG Drain-Source Voltage Drain Current Drain Current Continuous 25°C) Continuous 100°C) Pulsed
(Note
Parameter
FQPF9N50CF
5.4*
(Note (Note (Note (Note
Units
V/ns W/°C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation 25°C) Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
0.35 +150
Drain current limited maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQPF9N50CF
2.86 62.5
Units
°C/W °C/W
©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQPF9N50CF Rev.
FQPF9N50CF 500V N-Channel MOSFET
Package Marking Ordering Information
Device Marking
FQPF9N50CF
Device
FQPF9N50CF
Package
TO-220F
25°C unless otherwise noted
Reel Size
Tape Width
Quantity
Electrical Characteristics
Symbol
Characteristics BVDSS BVDSS/ IDSS IGSSF IGSSR VGS(th) RDS(on) Ciss Coss Crss td(on) td(off)
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
Referenced 25°C 125°C VGS,
(Note
-2.0
-0.57 -0.70 -100
Units
-100 0.85 -1030 V/°C
Characteristics
Dynamic Characteristics
Switching Characteristics -(Note
(Note
Drain-Source Diode Characteristics Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge A/µs
(Note
Repetitive Rating Pulse width limited maximum junction temperature 8mH, 50V, Starting 25°C 11A, di/dt 200A/µs, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature Current limited maximum junction temperature
FQPF9N50CF Rev.
www.fairchildsemi.com
FQPF9N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
Figure On-Region Characteristics
15.0 10.0 Bottom
Figure Transfer Characteristics
Drain Current
Drain Current
Notes 250µ Pulse Test
Notes 250µ Pulse Test
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation Source Current Temperatue
RDS(ON) Drain-Source On-Resistance
IDR, Reverse Drain Current
Note
Notes 250µ Pulse Test
Drain Current
VSD, Source-Drain voltage
Figure Capacitance Characteristics
2000
Ciss (Cds shorted) Coss Crss
Figure Gate Charge Characteristics
VGS, Gate-Source Voltage
1600
100V 250V
Capacitance [pF]
Ciss
1200
400V
Coss
Crss
Notes
Note
VDS, Drain-Source Voltage
Total Gate Charge [nC]
FQPF9N50CF Rev.
www.fairchildsemi.com
FQPF9N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
Notes
Notes
-100
-100
Junction Temperature
Junction Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
Operation This Area Limited DS(on)
Drain Current
Drain Current
Notes
Single Pulse
VDS, Drain-Source Voltage
Case Temperature
Figure Transient Thermal Response Curve
Thermal Response (t),
FQPF9N50CF Rev.
www.fairchildsemi.com
FQPF9N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit Waveform
Resistive Switching Test Circuit Waveforms
Unclamped Inductive Switching Test Circuit Waveforms
FQPF9N50CF Rev.
www.fairchildsemi.com
FQPF9N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit Waveforms
FQPF9N50CF Rev.
www.fairchildsemi.com
FQPF9N50CF 500V N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10 10.16 ±0.20 (7.00) ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47 9.75 ±0.30 0.80 ±0.10
0.35 ±0.10 2.54TYP [2.54 ±0.20]
0.50 -0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20
+0.10
2.76 ±0.20
9.40 ±0.20
Dimensions Millimeters
FQPF9N50CF Rev.
15.87 ±0.20
www.fairchildsemi.com
FQPF9N50CF 500V N-Channel MOSFET
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExActiveArrayBottomlessBuild Quiet Series
FAST®
Across board. Around world.The Power Franchise® Programmable Active Droop
PowerSaverPowerTrench® QFET® QSQT OptoelectronicsQuiet SWITCHER® SMART
SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic® UniFETVCXWire
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
Preliminary
Identification Needed
Full Production
Obsolete
Production
FQPF9N50CF Rev.
www.fairchildsemi.com
Other recent searches
TR3070 - TR3070 TR3070 Datasheet
SS30D20C - SS30D20C SS30D20C Datasheet
SS30D60C - SS30D60C SS30D60C Datasheet
PT7705--5V - PT7705--5V PT7705--5V Datasheet
MIC8114 - MIC8114 MIC8114 Datasheet
BB178WT - BB178WT BB178WT Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
