70A, 55V, 0.012 Ohm, N-Channel UltraFETPower MOSFETs HUF75339 N-C
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HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S
70A, 55V, 0.012 Ohm, N-Channel UltraFETPower MOSFETs
HUF75339 N-Channel power MOSFET manufactured using innovative UltraFETprocess. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored charge. designed applications where power efficiency important, such switching regulators, switching converters, motor drivers, relay drivers, low-voltage switches, power management portable battery-operated products. Formerly developmental type TA75339.
BRAND 75339G 75339P 75339S 75339S
August 1997
Features
70A, Ultra On-Resistance, rDS(ON) 0.012 Diode Exhibits Both High Speed Soft Recovery Temperature Compensating PSPICE Model Thermal Impedance PSPICE Model Peak Current Pulse Width Curve Rating Curve
Ordering Information
PART NUMBER HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S PACKAGE TO-247 TO-220AB TO-262AA TO-263AB
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, e.g., HUF75339S3ST.
Packaging
JEDEC TO-247
SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
DRAIN (FLANGE)
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. UltraFETis Trademark Harris Corporation. Copyright Harris Corporation 1997
File Number
4363.1
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S
Absolute Maximum Ratings
25oC, Unless Otherwise Specified Figure Figures 0.83 W/oC
Drain Source Voltage VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (Figure Pulsed Drain Current .IDM Pulsed Avalanche Rating Power Dissipation (Figure Derate Above 25oC (Figure Operating Storage Temperature TSTG Soldering Temperature Leads
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETERS
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 50V, 45V, 150oC 30V, 70A, 0.428 Ig(REF) 1.0mA (Figures 13,16,17) (Figure TO-247 TO-220, TO-262, TO-263 2000 0.012 1.21 UNITS
oC/W oC/W oC/W
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS
±20V 70A, (Figure 30V, 70A, 0.428, 10V, (Figures
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETERS Source Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL TEST CONDITIONS 70A, dISD/dt 100A/µs 70A, dISD/dt 100A/µs 1.25 UNITS
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE ZJC, NORMALIZED
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1
SINGLE PULSE 0.01 10-5
10-4
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
RATED 25oC IDM, PEAK CURRENT
1000
25oC
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
100µs 10ms OPERATION THIS AREA LIMITED rDS(ON) VDS, DRAIN SOURCE VOLTAGE
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5 10-4 10-3 10-2 10-1 PULSE WIDTH
VDSS
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S Typical Performance Curves
(Continued)
ID(ON), ON-STATE DRAIN CURRENT
DRAIN CURRENT
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5%
175oC
PULSE DURATION 250µs 25oC
25oC -55oC
VDS, DRAIN SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 250µs, 10V, NORMALIZED GATE THRESHOLD VOLTAGE
VDS, 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
3750 1MHz 3000 CAPACITANCE (pF)
2250 CISS 1500 COSS CRSS
DRAIN SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S Typical Performance Curves
IAS, AVALANCHE CURRENT
(Continued)
GATE SOURCE VOLTAGE
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
WAVEFORMS DESCENDING ORDER: 52.5A 17.5A
STARTING 25oC
STARTING 150oC
GATE CHARGE (nC)
0.001
0.01 tAV, TIME AVALANCHE (ms)
NOTE:
Refer Harris Application Notes AN9321 AN9322.
NOTE:
Refer Harris Application Notes AN7254 AN7260.
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S PSPICE Electrical Model
SUBCKT HUF75339
2.8e-9 2.7e-9 1.77e-9 DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD EBREAK 59.2 EVTHRES EVTEMP
LGATE RSLC1 ESLC RLDRAIN DBREAK EBREAK
6/25/97
LDRAIN DPLCAP DRAIN
RSLC2
GATE RLGATE EVTEMP RGATE EVTHRES
LDRAIN 1e-9 LGATE 2.0e-9 LSOURCE 4.69e-10 LSOURCE LGATE 0.0302 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD
MSTRO LSOURCE RSOURCE RLSOURCE SOURCE
RBREAK RBREAKMOD RDRAIN RDRAINMOD 1.95e-3 RGATE 0.34 RLDRAIN RLGATE RLSOURCE RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 6.0e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT ESLC VALUE .MODEL DBODYMOD 3.5e-12 3.02e-3 TRS1 3e-3 TRS2 4e-6 2.9e-9 4.35e-8 1.02 5.5) .MODEL DBREAKMOD 8.5e-2 TRS1 8e-4 TRS2 1e-7) .MODEL DPLCAPMOD (CJO 40e-10 1e-30 1.05) .MODEL MMEDMOD NMOS (VTO 1e-30 .MODEL MSTROMOD NMOS (VTO 3.73 86.5 1e-30 .MODEL MWEAKMOD NMOS (VTO 0.01 1e-30 .MODEL RBREAKMOD (TC1 1.08e-3 -2.5e-7) .MODEL RDRAINMOD (TC1 2.05e-2 1.6e-5) .MODEL RSLCMOD (TC1 6e-3 -2.8e-6) .MODEL RSOURCEMOD (TC1 5.5e-4 1.75e-5) .MODEL RVTHRESMOD -3.65e-3 -6e-6) .MODEL RVTEMPMOD (TC1 -2.3e-3 -4e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -9.0 VOFF -5.5) -5.5 VOFF -9.0) VOFF 2.1) VOFF 0.0)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
RDRAIN
DBODY
MWEAK MMED
RBREAK RVTEMP
VBAT
RVTHRES
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S PSPICE Thermal Model
June HUF75339 CTHERM1 6.50e-3 CTHERM2 1.00e-3 CTHERM3 2.24e-3 CTHERM4 8.60e-3 CTHERM5 5.80e-2 CTHERM6 RTHERM1 3.00e-7 RTHERM2 7.00e-6 RTHERM3 3.30e-2 RTHERM4 2.75e-1 RTHERM5 5.50e-1 RTHERM6 2.60e-1
JUNCTION
RTHERM1
CTHERM1
RTHERM2
CTHERM2
RTHERM3
CTHERM3
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TO-247
LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.180 0.046 0.060 0.095 0.020 0.800 0.605 0.190 0.051 0.070 0.105 0.026 0.820 0.625
MILLIMETERS 4.58 1.17 1.53 2.42 0.51 20.32 15.37 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES
0.219 0.438 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270
5.56 11.12 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85
BACK VIEW
NOTES: Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 1-93.
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TO-220AB
LEAD JEDEC TO-220AB PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.170 0.048 0.030 0.045 0.014 0.590 0.395 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 0.200 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112
MILLIMETERS 4.32 1.22 0.77 1.15 0.36 14.99 10.04 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 5.08 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97.
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TO-262AA
LEAD JEDEC TO-262AA PLASTIC PACKAGE
TERM.
INCHES MILLIMETERS SYMBOL NOTES 0.170 0.180 4.32 4.57 0.048 0.052 1.22 1.32 0.030 0.034 0.77 0.86 0.045 0.055 1.15 1.39 0.018 0.022 0.46 0.55 0.405 0.425 10.29 10.79 0.395 0.405 10.04 10.28 0.100 2.54 0.200 5.08 0.045 0.055 1.15 1.39 0.095 0.105 2.42 2.66 0.530 0.550 13.47 13.97 0.110 0.130 2.80 3.30 NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-262AA outline dated 6-90. Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97.
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TERM.
TERM.
.450 (11.43)
.700 (17.78)
.350 (8.89)
.080(2.03) .062(1.58)
.150 (3.81) .080(2.03)
.062(1.58) MINIMUM SIZE RECOMMENDED SURFACE-MOUNTED APPLICATIONS
INCHES MILLIMETERS SYMBOL NOTES 0.170 0.180 4.32 4.57 0.048 0.052 1.22 1.32 0.030 0.034 0.77 0.86 0.045 0.055 1.15 1.39 0.310 7.88 0.018 0.022 0.46 0.55 0.405 0.425 10.29 10.79 0.395 0.405 10.04 10.28 0.100 2.54 0.200 5.08 0.045 0.055 1.15 1.39 0.095 0.105 2.42 2.66 0.175 0.195 4.45 4.95 0.090 0.110 2.29 2.79 0.050 0.070 1.27 1.77 0.315 8.01 NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-263AB outline dated 2-92. dimensions established minimum mounting surface terminal Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. terminal length soldering. Position lead measured 0.120 inches (3.05mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97.
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TO-263AB
24mm TAPE REEL
40mm MIN. ACCESS HOLE 1.5mm DIA. HOLE 30.4mm
4.0mm 2.0mm 1.75mm
13mm 330mm 100mm
24mm
16mm 24.4mm
USER DIRECTION FEED
COVER TAPE GENERAL INFORMATION "9A" SUFFIX PART NUMBER. SUFFIX PART "HUF" SERIES. PIECES REEL. ORDER MULTIPLES FULL REELS ONLY. MEETS EIA-481 REVISION SPECIFICATIONS.
Revision dated 7-97
Harris Semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Harris Semiconductor products sold description only. Harris Semiconductor reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Harris believed accurate reliable. However, responsibility assumed Harris subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Harris subsidiaries.
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