23A, 60V, Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mo
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RFP23N06LE, RF1S23N06LE, RF1S23N06LESM
23A, 60V, Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
JEDEC TO-220AB
SOURCE DRAIN GATE
July 1996
Features
23A, rDS(ON) 0.065 Protected Temperature Compensating PSPICE Model Peak Current Pulse Width Curve
DRAIN (FLANGE)
Rating Curve +175oC Operating Temperature
JEDEC TO-262AA
SOURCE DRAIN GATE
Description
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM N-channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers. These transistors operated directly from integrated circuits.
PACKAGE AVAILABILITY PART NUMBER RFP23N06LE RF1S23N06LE RF1S23N06LESM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP23N06L F23N06LE F23N06LE
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, i.e. RF1S23N06LESM9A.
Formerly developmental type TA49165.
Absolute Maximum Ratings
+25oC) RFP23N06LE, RF1S23N06LE, RF1S23N06LESM Refer Peak Current Curve Refer Curve +175 UNITS
Drain-Source Voltage VDSS Drain-Gate Voltage (RGS 1M). VDGR Gate-Source Voltage (Note) Drain Current Continuous Pulsed Drain Current .IDM Pulsed Avalanche Rating Power Dissipation +25oC Derate above +25oC Operating Storage Temperature TSTG, Soldering Temperature Leads Electrostatic Discharge Rating MIL-STD-883, Category B(2) .ESD
W/oC
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1996
File Number
4077.2
Specifications RFP23N06LE, RF1S23N06LE, RF1S23N06LESM
Electrical Specifications
PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 60V, ±10V 23A, 30V, 23A, 1.30, +25oC +150oC 25V, 1MHz 48V, 23A, 2.09 0.90 0.065 2.00 UNITS
oC/W oC/W
Gate-Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) tD(ON) tD(OFF) tOFF QG(TOT) QG(5) QG(TH) CISS COSS CRSS
Source-Drain Diode Ratings Specifications
PARAMETERS Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 23A, dISD/dt 100A/µs UNITS
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM Typical Performance Curves
+25oC DUTY CYCLE 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK
DRAIN CURRENT
ZJC, NORMALIZED THERMAL RESPONSE
100µs
OPERATION THIS AREA LIMITED rDS(ON) 10ms 100ms
SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1
VDS, DRAIN-TO-SOURCE VOLTAGE
RECTANGULAR PULSE DURATION
FIGURE SAFE OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
IDM, PEAK CURRENT CAPABILITY
+25oC TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
(oC) CASE TEMPERATURE
10-5
THERMAL IMPEDANCE LIMIT CURRENT THIS REGION 10-4 10-3 10-2 10-1 PULSE WIDTH
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
FIGURE PEAK CURRENT CAPABILITY
PULSE DURATION 250µs, +25oC ID(ON), ON-STATE DRAIN CURRENT 4.5V
-55oC +175oC +25oC
DRAIN CURRENT
3.5V 2.5V
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5%
VDS, DRAIN-TO-SOURCE VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE
FIGURE TYPICAL SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM Typical Performance Curves
BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
(Continued)
250µA VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE VDS, 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
PULSE DURATION 250µs, 5.75A
PULSE DURATION 250µs, rDS(ON), NORMALIZED RESISTANCE rDS(ON), ON-STATE RESISTANCE
11.5A
JUNCTION TEMPERATURE (oC) VGS, GATE-TO-SOURCE VOLTAGE
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
30V, 23A, 1.30
FIGURE rDS(ON) VARYING CONDITIONS GATE VOLTAGE DRAIN CURRENT
DRAIN-SOURCE VOLTAGE BVDSS BVDSS
5.00 GATE-SOURCE VOLTAGE
SWITCHING TIME (ns) tD(OFF)
3.75
2.17 IG(REF) 0.45mA PLATEAU VOLTAGES DESCENDING ORDER: BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
2.50
1.25
tD(ON) RGS, GATE-TO-SOURCE RESISTANCE
TIME (µs)
FIGURE SWITCHING TIME FUNCTION GATE RESISTANCE
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT. REFER HARRIS APPLICATION NOTES AN7254 AN7260
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM Typical Performance Curves
1200 1000 CAPACITANCE (pF) CISS
(Continued)
FREQUENCY 1MHz
IAS, AVALANCHE CURRENT
STARTING +25oC STARTING +150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) 0.001 0.01 tAV, TIME AVALANCHE (ms)
COSS CRSS VDS, DRAIN-TO-SOURCE VOLTAGE
FIGURE TYPICAL CAPACITANCE VOLTAGE
FIGURE UNCLAMPED INDUCTIVE SWITCHING. REFER HARRIS APPLICATION NOTES AN9321 AN9322
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM Test Circuits Example Waveforms
VARY OBTAIN REQUIRED PEAK 0.01
BVDSS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tD(ON)
tOFF tD(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM Temperature Compensated PSPICE Model RFP23N06LE, RF1S23N06LE, RF1S23N06LESM
SUBCKT 23N06LE
2.60e-9 2.55e-9 7.75e-9 DBODY DBODYMOD DBREAK DBREAKMOD DESD1 DESD1MOD DESD2 DESD2MOD DPLCAP DPLCAPMOD EBREAK 66.01 EVTHRES EVTEMP LDRAIN 1e-9 LGATE 5.15e-9 LSOURCE 5.15e-9 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 15e-3 RGATE RLDRAIN RLGATE 51.5 RLSOURCE 51.5 RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 20.0e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
9/27/95
LDRAIN DPLCAP RLDRAIN RSLC2 RSLC1 ESLC RDRAIN EVTHRES MSTRO LSOURCE RSOURCE RVTHRES SOURCE RLSOURCE RBREAK RVTEMP VBAT MMED EBREAK MWEAK DBODY DBREAK DRAIN
GATE
LGATE
EVTEMP RGATE DESD1 DESD2
RLGATE
VBAT ESLC VALUE .MODEL DBODYMOD 3.18e-13 9.14e-3 TRS1 1.84e-3 TRS2 9.51e-7 7.22e-10 4.96e-8 0.44) .MODEL DBREAKMOD 1.39e-1 TRS1 -5.20e-4 TRS2 -4.16e-6) .MODEL DESD1MOD 12.35 TBV1 TBV2 TRS1 1.2e-6 TRS2 .MODEL DESD2MOD 12.36 TBV1 TBV2 TRS1 1.2e-6 TRS2 .MODEL DPLCAPMOD (CJO 5e-10 1e-30 0.60) .MODEL MMEDMOD NMOS (VTO 1.59 1.75 1e-30 2.5) .MODEL MSTROMOD NMOS (VTO 1.90 1e-30 .MODEL MWEAKMOD NMOS (VTO 1.378 0.075 1e-30 0.1) .MODEL RBREAKMOD (TC1 9.99e-4 7.71e-12) .MODEL RDRAINMOD (TC1 1.27e-2 4.73e-5) .MODEL RSLCMOD (TC1 2.41e-3 5.10e-6) .MODEL RSOURCEMOD (TC1 .MODEL RVTHRESMOD (TC1 -1.11e-3 -4.33e-6) .MODEL RVTEMPMOD (TC1 -1.34e-3 1.12e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -4.7 VOFF -1.7) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -1.7 VOFF -4.7) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -1.2 VOFF 1.8) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF -1.2 .ENDS
NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM TO-220AB
LEAD JEDEC TO-220AB PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.170 0.048 0.030 0.045 0.014 0.590 0.395 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 0.200 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112
MILLIMETERS 4.32 1.22 0.77 1.15 0.36 14.99 10.04 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 5.08 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 1-93.
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM TO-262AA
LEAD JEDEC TO-262AA PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.170 0.048 0.030 0.045 0.018 0.405 0.395 0.180 0.052 0.034 0.055 0.022 0.425 0.405
MILLIMETERS 4.32 1.22 0.77 1.15 0.46 10.29 10.04 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES
0.100 0.200 0.045 0.095 0.530 0.110 0.055 0.105 0.550 0.130
2.54 5.08 1.15 2.42 13.47 2.80 1.39 2.66 13.97 3.30
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-262AA outline dated 6-90. Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 10-95.
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.170 0.048 0.030 0.045 0.310 0.018 0.405 0.395 0.180 0.052 0.034 0.055 0.022 0.425 0.405
MILLIMETERS 4.32 1.22 0.77 1.15 7.88 0.46 10.29 10.04 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES
.450 (11.43)
.350 (8.89)
0.100 0.200 0.045 0.095 0.175 0.090 0.050 0.315 0.055 0.105 0.195 0.110 0.070
2.54 5.08 1.15 2.42 4.45 2.29 1.27 8.01 1.39 2.66 4.95 2.79 1.77
TERM.
.700 (17.78)
.150 (3.81) .080(2.03) .062(1.58) .062(1.58) MINIMUM SIZE RECOMMENDED SURFACE-MOUNTED APPLICATIONS .080(2.03)
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-263AB outline dated 2-92. dimensions established minimum mounting surface terminal Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. terminal length soldering. Position lead measured 0.120 inches (3.05mm) from bottom dimension Controlling dimension: Inch. Revision dated 10-95.
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM TO-263AB
24mm TAPE REEL
40mm MIN. ACCESS HOLE 1.5mm DIA. HOLE 30.4mm
4.0mm 2.0mm 1.75mm
13mm 330mm 100mm
24mm
16mm 24.4mm
USER DIRECTION FEED
COVER TAPE GENERAL INFORMATION "9A" SUFFIX PART NUMBER. PIECES REEL. ORDER MULTIPLES FULL REELS ONLY. MEETS EIA-481 REVISION SPECIFICATIONS.
Revision dated 10-95
RFP23N06LE, RF1S23N06LE, RF1S23N06LESM
Harris Semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Harris Semiconductor products sold description only. Harris Semiconductor reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Harris believed accurate reliable. However, responsibility assumed Harris subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Harris subsidiaries.
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