Dual Independent Differential Power Applications from 120MHz CA30
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CA3054
Dual Independent Differential Power Applications from 120MHz
CA3054 consists independent differential amplifiers with associated constant current transistors common monolithic substrate. transistors which comprise amplifiers general purpose devices which exhibit noise value excess 300MHz. These feature make CA3054 useful from 120MHz. Bias load resistors have been omitted provide maximum application flexibility. monolithic construction CA3054 provides close electrical thermal matching amplifiers. This feature makes these devices particularly useful dual channel applications where matched performance channels required.
November 1996
Features
Differential Amplifiers Common Substrate Independently Accessible Inputs Outputs Maximum Input Offset Voltage ±5mV Temperature Range 85oC
Applications
Dual Sense Amplifiers Dual Schmitt Triggers Multifunction Combinations RF/Mixer/Oscillator; Converter/IF Amplifiers (Differential and/or Cascode) Product Detectors Doubly Balanced Modulators Demodulators Balanced Quadrature Detectors Cascade Limiters Synchronous Detectors Pairs Balanced Mixers Synthesizer Mixers Balanced (Push-Pull) Cascode Amplifiers
Ordering Information
PART NUMBER (BRAND) CA3054 CA3054M (3054) CA3054M96 (3054) TEMP. RANGE (oC) PACKAGE PDIP SOIC SOIC Tape Reel PKG. E14.3 M14.15 M14.15
Pinout
CA3054 (PDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1996
File Number
388.3
7-37
CA3054
Absolute Maximum Ratings
25oC
Thermal Information
Thermal Resistance (Typical, Note (oC/W) PDIP Package SOIC Package Maximum Junction Temperature (Die). 175oC Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only) Maximum Power Dissipation (Any Transistor) 300mW
Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current, 50mA
Operating Conditions
Temperature Range 85oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3054 isolated from substrate integral diode. substrate must connected voltage which more negative than collector voltage order maintain isolation between transistors provide normal transistor action. substrate should maintained signal (AC) ground means suitable grounding capacitor, avoid undesired coupling between transistors. measured with component mounted evaluation board free air.
Maximum Voltage Ratings
following chart gives range voltages which applied terminals listed vertically with respect terminals listed horizontally. example, voltage range vertical Terminal with respect Terminal +15V -5V. (NOTE TERM
Maximum Current Ratings
(NOTE TERM IOUT
Note Note +15, Note Note Note Note Note Note Note Note Note Note +20, Note Note Note Note Note Note +20, +20, Note +20, Note Note Note Note Note Note +20, Note +15, Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note Note +15, Note Note Note Note Note +20, +20, Note Note +20, Note +15, Note Note Note Ref. Substrate
NOTES: Voltages normally applied between these terminals. Voltages appearing between these terminals will safe specified limits between other terminals exceeded. Terminal CA3054 used.
Electrical Specifications
PARAMETER CHARACTERISTICS Input Offset Voltage (Figure Input Offset Current (Figure Input Bias Current (Figure
25oC SYMBOL C(Q1) C(Q5) C(Q2) C(Q6) TEST CONDITIONS IE(Q3) IE(Q4) IE(Q3) IE(Q4) IE(Q3) IE(Q4) IE(Q3) IE(Q4) 0.45 0.98 1.02 UNIT
Each Differential Amplifier
Quiescent Operating Current Ratio (Figure Temperature Coefficient Magnitude Input Offset Voltage (Figure
IE(Q3) IE(Q4)
µV/oC
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CA3054
Electrical Specifications
PARAMETER EACH TRANSISTOR Forward Base-to-Emitter Voltage (Figure 50µA 10mA Temperature Coefficient Base-toEmitter Voltage (Figure Collector Cutoff Current (Figure Collector-to-Emitter Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage DYNAMIC CHARACTERISTICS Common Mode Rejection Ratio each Amplifier (Figures Range, Stage (Figures Voltage Gain, Single Stage Double-Ended Output (Figures Range, Stage (Figures Voltage Gain, Stage DoubleEnded Output (Figures Frequency, Small Signal Equivalent Circuit Characteristics (For Single Transistor) Forward Current Transfer Ratio (Figure Short Circuit Input Impedance (Figure Open Circuit Output Impedance (Figure Open Circuit Reverse Voltage Transfer Ratio (Figure Noise Figure Single Transistor Gain Bandwidth Product Single Transistor (Figure Admittance Characteristics; Differential Circuit Configuration (For Each Amplifier) Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure CMRR 12V, -6V, -3.3V, 1kHz 12V, -6V, -3.3V, 1kHz 12V, -6V, -3.3V, 1kHz 12V, -6V, -3.3V, 1kHz 12V, -6V, -3.3V, 1kHz ICBO V(BR)CEO V(BR)CBO V(BR)CIO V(BR)EBO 0.630 0.715 0.750 0.800 -1.9 0.700 0.800 0.850 0.900 µV/oC 25oC (Continued) SYMBOL TEST CONDITIONS UNIT
10V, 1mA, 10µA, 10µA, 10µA,
0.002
1kHz, 1kHz, 1kHz, 1kHz, 1kHz,
15.6 10-4 3.25
1MHz Each Collector 1.25mA 1MHz Each Collector 1.25mA 1MHz Each Collector 1.25mA 1MHz Each Collector 1.25mA
0.22 j0.1 0.01 -0.003
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CA3054
Electrical Specifications
PARAMETER Admittance Characteristics; Cascode Circuit Configuration (For Each Amplifier) Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Noise Figure 25oC (Continued) SYMBOL TEST CONDITIONS UNIT
1MHz Total Stage 1MHz Total Stage 1MHz Total Stage 1MHz Total Stage 100MHz
0.55 j0.02 0.004 j0.005
Test Circuits
+12V +12V
0.3VRMS 10µF ICUT SIGNAL SOURCE 0.5k 0.5k
0.1µF 10mVRMS 10µF VOUT SIGNAL SOURCE
ICUT 0.5k
0.1µF
VOUT
0.1µF
+12V
0.1µF
+12V
FIGURE COMMON MODE REJECTION RATIO TEST SETUP
FIGURE SINGLE STAGE VOLTAGE GAIN TEST SETUP
1mVRMS 10µF SIGNAL SOURCE ICUT
+12V 0.5k
0.1µF
VOUT
0.1µF
0.5k
+12V
FIGURE STAGE VOLTAGE GAIN TEST SETUP
7-40
CA3054 Typical Performance Curves
COLLECTOR CUTOFF CURRENT (nA) INPUT BIAS CURRENT (µA) 10-1 10-2 10-3 10-4 TEMPERATURE (oC) (NOTE) COLLECTOR CURRENT (mA) 25oC
10.0
NOTE: CA3054 data from 85oC only. FIGURE COLLECTOR-TO-BASE CUTOFF CURRENT TEMPERATURE EACH TRANSISTOR
0.5mA OFFSET VOLTAGE (mV)
FIGURE INPUT BIAS CURRENT COLLECTOR CURRENT EACH TRANSISTOR
0.75 0.50 0.25 0.1mA 10mA
BASE-TO-EMITTER VOLTAGE
TEMPERATURE (oC) (NOTE)
TEMPERATURE (oC) (NOTE)
NOTE: CA3054 data from 85oC only. FIGURE BASE-TO-EMITTER VOLTAGE EACH TRANSISTOR TEMPERATURE
NOTE: CA3054 data from 85oC only. FIGURE OFFSET VOLTAGE TEMPERATURE DIFFERENTIAL PAIRS
BASE-TO-EMITTER VOLTAGE
INPUT OFFSET VOLTAGE (mV)
25oC
INPUT OFFSET CURRENT (µA)
25oC
|VBE1 VBE2| 0.01
EMITTER CURRENT (mA)
0.01 0.01
COLLECTOR CURRENT (mA)
FIGURE STATIC BASE-TO-EMITTER VOLTAGE INPUT OFFSET VOLTAGE DIFFERENTIAL PAIRS EMITTER CURRENT
FIGURE INPUT OFFSET CURRENT MATCHED DIFFERENTIAL PAIRS COLLECTOR CURRENT
7-41
CA3054 Typical Performance Curves
COMMON MODE REJECTION RATIO (dB) 1kHz
(Continued)
SINGLE STAGE VOLTAGE GAIN (dB) 1kHz SIGNAL INPUT 10mVRMS
BIAS VOLTAGE TERMINAL
BIAS VOLTAGE TERMINAL
FIGURE COMMON MODE REJECTION RATIO CHARACTERISTIC
STAGE VOLTAGE GAIN (dB) 1kHz SIGNAL INPUT 1mVRMS
FIGURE SINGLE STAGE VOLTAGE GAIN CHARACTERISTIC
NORMALIZED PARAMETERS 1kHz 25oC 3.5k 1.88 10-4 15.6µS
0.01 COLLECTOR CURRENT (mA)
BIAS VOLTAGE TERMINALS
FIGURE STAGE VOLTAGE GAIN CHARACTERISTIC
FIGURE FORWARD CURRENT TRANSFER RATIO (hFE), SHORT CIRCUIT INPUT IMPEDANCE (hIE), OPEN CIRCUIT OUTPUT IMPEDANCE (hOE), OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO (hRE) COLLECTOR CURRENT EACH TRANSISTOR
FORWARD TRANSFER SUSCEPTANCE CONDUCTANCE (mS)
GAIN BANDWIDTH PRODUCT (MHz)
1000
25oC
DIFFERENTIAL CONFIGURATION (EACH TRANSISTOR) 1.25mA 25oC
FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
FIGURE GAIN BANDWIDTH PRODUCT (fT) COLLECTOR CURRENT
FIGURE FORWARD TRANSFER ADMITTANCE (Y21) FREQUENCY
7-42
CA3054 Typical Performance Curves
DIFFERENTIAL CONFIGURATION (EACH TRANSISTOR) 1.25mA OUTPUT CONDUCTANCE (mS) 25oC FREQUENCY (MHz) FREQUENCY (MHz)
(Continued)
OUTPUT SUSCEPTANCE (mS) OUTPUT SUSCEPTANCE (mS) DIFFERENTIAL CONFIGURATION (EACH TRANSISTOR) 1.25mA 25oC
INPUT SUSCEPTANCE CONDUCTANCE (mS)
FIGURE INPUT ADMITTANCE (Y11)
FIGURE OUTPUT ADMITTANCE (Y22) FREQUENCY
REVERSE TRANSFER CONDUCTANCE (mS)
DIFFERENTIAL CONFIGURATION (EACH TRANSISTOR) 1.25mA 25oC
REVERSE TRANSFER SUSCEPTANCE (µS)
FORWARD TRANSFER CONDUCTANCE SUSCEPTANCE (mS)
1000
FREQUENCY (MHz) CASCODE CONFIGURATION (STAGE) 2.5mA 25oC
-g12
0.01
0.001
0.0001
FREQUENCY (MHz)
0.01 1000
FIGURE REVERSE TRANSFER ADMITTANCE (Y12) FREQUENCY
FIGURE FORWARD TRANSFER ADMITTANCE (Y21) FREQUENCY
OUTPUT CONDUCTANCE 10-4)
INPUT CONDUCTANCE SUSCEPTANCE (mS)
CASCODE CONFIGURATION (STAGE) 2.5mA 25oC
FREQUENCY (MHz) CASCODE CONFIGURATION (STAGE) 2.5mA 25oC
FREQUENCY (MHz)
FIGURE INPUT ADMITTANCE (Y11) FREQUENCY
FIGURE OUTPUT ADMITTANCE (Y22) FREQUENCY
7-43
CA3054 Typical Performance Curves
(Continued)
REVERSE TRANSFER CONDUCTANCE SUSCEPTANCE (µS)
CASCODE CONFIGURATION (STAGE) 2.5mA 25oC
-b12
0.01
0.001
FREQUENCY (MHz)
FIGURE REVERSE TRANSFER ADMITTANCE (Y12) FREQUENCY
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