25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

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25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

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RFP25N06, RF1S25N06, RF1S25N06SM
25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
JEDEC TO-220AB
SOURCE DRAIN GATE
December 1995
Features
25A, rDS(ON) 0.047 Temperature Compensating PSPICE Model Peak Current Pulse Width Curve Rating Curve +175oC Operating Temperature
DRAIN (FLANGE)
JEDEC TO-262AA
Description
RFP25N06, RF1S25N06, RF1S25N06SM N-Channel power MOSFETs manufactured using MegaFET process. This process which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers. These transistors operated directly from integrated circuits.
PACKAGE AVAILABILITY PART NUMBER RFP25N06 RF1S25N06 RF1S25N06SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND RFP25N06 F1S25N06 F1S25N06
DRAIN (FLANGE)
SOURCE DRAIN GATE
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
Symbol
NOTE: When ordering, entire part number. suffix, obtain TO-263AB variant tape reel, i.e.RF1S25N06SM9A.
Formerly developmental type TA09771.
Absolute Maximum Ratings
+25oC, Unless Otherwise Specified RFP25N06, RF1S25N06, RF1S25N06SM UNITS
Drain-Source Voltage .VDSS Drain-Gate Voltage VDGR Gate-Source Voltage
Drain Current Continuous. Pulsed Drain Current Refer Peak Current Curve Pulsed Avalanche Rating .EAS Power Dissipation +25oC Derate above +25oC Operating Storage Temperature TSTG, Soldering Temperature Leads Refer Curve 0.48 +175
W/oC
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1995
File Number
1492.3
3-27
Specifications RFP25N06, RF1S25N06, RF1S25N06SM
Electrical Specifications
PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 60V, ±20V 25A, 30V, 12.5A, 2.4, 10V, +25oC +150oC 25V, 1MHz 48V, 25A, 1.92 0.047 2.083 UNITS
oC/W oC/W
Gate-Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) tD(ON) tD(OFF) tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS
Source-Drain Diode Ratings Specifications
PARAMETERS Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 25A, dISD/dt 100A/µs UNITS
3-28
RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves
+25oC DRAIN CURRENT ZJC, NORMALIZED THERMAL RESPONSE NOTES: DUTY FACTOR: t1/t2 PEAK
100µs OPERATION THIS AREA LIMITED rDS(ON) VDS, DRAIN-TO-SOURCE VOLTAGE 10ms VDSS 100ms
SINGLE PULSE
0.01 10-5
10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION
FIGURE SAFE OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
+25oC IDM, PEAK CURRENT CAPABILITY TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY FOLLOWS:
DRAIN CURRENT
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-4 10-3 10-2 10-1 PULSE WIDTH
CASE TEMPERATURE (oC)
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
FIGURE PEAK CURRENT CAPABILITY
ID(ON) ON-STATE DRAIN CURRENT
DRAIN CURRENT
PULSE DURATION 250µs, +25oC
-55oC +175oC PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% +25oC
4.5V
VDS, DRAIN-TO-SOURCE VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE
FIGURE TYPICAL SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
3-29
RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves (Continued)
BVDSS, NORMALIZED DRAIN-TO-SOURCE 250µA VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE VDS, 250µA
BREAKDOWN VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
rDS(ON), NORMALIZED RESISTANCE
PULSE DURATION 250µs, 10V, POWER DISSIPATION MULTIPLIER
JUNCTION TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
DRAIN-SOURCE VOLTAGE
BVDSS
BVDSS
1200 CISS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS IG(REF) 0.75mA
COSS CRSS
VDS, DRAIN-TO-SOURCE VOLTAGE
TIME (µs)
FIGURE TYPICAL CAPACITANCE VOLTAGE
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT. REFER HARRIS APPLICATION NOTES AN7254 AN7260
3-30
GATE-SOURCE VOLTAGE
1600
FREQUENCY 1MHz
CAPACITANCE (pF)
RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves (Continued)
IAS, AVALANCHE CURRENT
STARTING +25oC
STARTING +150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.01 tAV, TIME AVALANCHE (ms)
FIGURE UNCLAMPED INDUCTIVE SWITCHING. REFER HARRIS APPLICATION NOTES AN9321 AN9322
Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORM
tD(ON)
tOFF tD(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORM
3-31
RFP25N06, RF1S25N06, RF1S25N06SM Temperature Compensated PSPICE Model RFP25N06, RF1S25N06, RF1S25N06SM
.SUBCKT RFP25N06 8/19/94
1.83e-9 1.98e-9 9.7e-10
DPLCAP LDRAIN RSCL1 RSCL2 ESCL RDRAIN MOS1 RSOURCE LSOURCE SOURCE DBREAK
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 65.9 EVTO
GATE
DRAIN
EVTO
EBREAK MOS2
DBODY
LDRAIN 1e-9 LGATE 4.92e-9 LSOURCE 4.5e-9
LGATE
RGATE
MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01
RBREAK RBKMOD RDRAIN RDSMOD 1.1e-3 RGATE 2.88 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 20.3e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
RBREAK RVTO VBAT
VBAT 0.764 ESCL VALUE .MODEL DBDMOD 2.32e-13 5.72e-3 TRS1 2.56e-3 TRS2 -5.13e-6 1.18e-9 5.62e-8) .MODEL DBKMOD 2.00e-1 TRS1 3.33e-4 TRS2 2.68e-6) .MODEL DPLCAPMOD (CJO 6.55e-10 1e-30 .MODEL MOSMOD NMOS (VTO 3.89 15.03 1e-30 .MODEL RBKMOD (TC1 1.04e-3 -1.04e-6) .MODEL RDSMOD (TC1 5.85e-3 1.77e-5) .MODEL RSCLMOD (TC1 2.0e-3 1.5e-6) .MODEL RVTOMOD (TC1 -5.35e-3 -3.77e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 1.98 VOFF= -3.02) .ENDS NOTE: further discussion PSPICE model consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
3-32

25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

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