ation ecific chan fiits Notice parame FGC3500AX-120DS HIGH P

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ation ecific chan fiits Notice parame FGC3500AX-120DS HIGH P

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ELIM
ation ecific chan fiits Notice parame
FGC3500AX-120DS
HIGH POWER INVERTER PRESS PACK TYPE
FGC3500AX-120DS
OUTLINE DRAWING
Dimensions
+0.2 16-4.5
22.5° 0.5°
ITQRM Repetitive controllable on-state current 3500A IT(AV) Average on-state current 1200A VDRM Repetitive peak off-state voltage 6000V Anode short type
120MAX (127)
0.2DEPTH
APPLICATION Inverters, choppers, Induction heaters, converters.
MAXIMUM RATINGS
Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) VLTDS
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ off-state voltage+ Long term stability voltage+ Parameter Repetitive controllable on-state current on-state current Average on-state current Surge on-state current Current-squared, time integration Critical rate rise on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight (Recommended value 40kN) Typical value
Voltage class 6000 6000 4800 3600 Conditions 6000V, 3600V, 0.3µH, diGQ/dt 6000A/µs, 25/125°C (see Fig. Applied conduction angles 60Hz, sinewave 180°, 70°C half cycle 60Hz, 125°C 3600V, 3500A, IGM= 200A, 125°C (see Fig. diG/dt 100A/µs Ratings 3500 1800 1200 1000 1000 3500 6300 +125 +150 1500
0.4MIN
0.4MIN (6.8)
M3!0.5 2.5DEPTH
Unit Unit A/µs Sep. 2000
Symbol ITQRM IT(RMS) IT(AV) ITSM diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tstg
ELIM
ation ecific chan fiits Notice parame
FGC3500AX-120DS
HIGH POWER INVERTER PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol VIRRM IDRM IGRM dv/dt Eoff Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate rise off-state voltage Turn-on time Delay time Turn-on switching energy Storage time Turn-off switching energy Gate trigger current Gate trigger voltage Thermal resistance Test conditions 4000A, 125°C 21V, 125°C 6000V, -2V, 125°C 21V, 125°C 3600V, -2V, 125°C (Expo. wave) 3600V, 3500A, di/dt 1000A/µs 200A, diG/dt 100A/µs, 125°C (see Fig. 6000V, 3600V, 3500A diGQ/dt 6000A/µs, 6µF, 0.3µH (see Fig. 20V, 125°C METHOD 24V, 0.1, 25°C Junction (see Fig. 3000 Limits 0.011 Unit V/µs °C/W
Fig. Turn-on Turn-off waveform
diG/dt
diGQ/dt
0.9VD 0.1VD diG/dt 0.1IGM 0.9IGM 0.9IT diGQ/dt 0.1IGQ 0.9IGQ
Fig. Turn-on test circuit
Fig. Turn-off test circuit
(With clamp circuit)
Fig. dv/dt test waveform
dV/dt 0.632VD/
L(line)
0.632VD
L(load)
FWDi
Sep. 2000
ELIM
ation ecific chan fiits Notice parame
FGC3500AX-120DS
HIGH POWER INVERTER PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
ON-STATE CURRENT
TURN SWITCHING ENERGY (J/P)
TURN SWITCHING ENERGY (TYPICAL)
Condition
VD=3600V, di/dt=1000A/µs IGM=200A, diG/dt=100A/µs
Tj=125°C
Tj=125°C Tj=25°C
1000 1500 2000 2500 3000 3500 4000 TURN CURRENT
ON-STATE VOLTAGE
TURN SWITCHING ENERGY Eoff (J/P)
TURN SWITCHING ENERGY (TYPICAL)
VDM=3600V+0.44IT 0.014
MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION FIN)
THERMAL IMPEDANCE (°C/W)
Condition
0.012 0.01 0.008 0.006 0.004 0.002
VD=3600V, CC=6µF
LC=0.3µF, Tj=125°C diGQ/dt=6000A/µs
1000 1500 2000 2500 3000 3500 4000 TURN CURRENT
10-3 710-2 710-1 TIME
Sep. 2000

ation ecific chan fiits Notice parame FGC3500AX-120DS HIGH P

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