FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8m Genera

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FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8m Genera

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FDS6673BZ P-Channel PowerTrench® MOSFET
FDS6673BZ P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8m General Description
This P-Channel MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that been especially tailored minimize on-state resistance. This device well suited Power Management load switching applications common Notebook Computers Portable Battery Packs.
Features
rDS(on) 7.8m, -10V, -14.5A rDS(on) 12m, -4.5V, -12A Extended range (-25V) battery applications protection level 6.5kV typical (note High performance trench technology extremely rDS(on) High power current handling capability RoHS compliant
SO-8
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol TSTG Operating Storage Temperature Parameter Drain Source Voltage Gate Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Operation (Note1a) (Note1b) (Note1c) (Note1a) Ratings -14.5 Units
Thermal Characteristics
Thermal Resistance Junction Ambient (Note Thermal Resistance Junction Case (Note °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6673BZ Device FDS6673BZ Reel Size 13'' Tape Width 12mm Quantity 2500 units
©2006 Fairchild Semiconductor Corporation FDS6673BZ Rev.
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FDS6673BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current -250µA, -250µA, referenced 25°C -24V, ±25V, mV/°C
Characteristics (Note
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient Drain Source Resistance Forward Transconductance VDS, -250µA -250µA, referenced 25°C -10V -14.5A -4.5V, -12A -10V, -14.5A 125oC -5V, -14.5A -1.9 mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -15V, 1.0MHz 3500 4700
Switching Characteristics (Note
td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate Source Gate Charge Gate Drain Charge -15V, -10V, -14.5A -15V, -5V, -14.5A -15V, -10V, 23.5
Drain-Source Diode Characteristics
Source Drain Diode Forward Voltage -2.1A Reverse Recovery Time Reverse Recovery Charge 14.5A, di/dt 100A/µs 14.5A, di/dt 100A/µs -0.7 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
oC/W sec) when mounted copper
oC/W when mounted copper
oC/W when mounted minimun
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%. diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
FDS6673BZ Rev.
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FDS6673BZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-ID, DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
4.5V 3.5V
-VDS, DRAIN SOURCE VOLTAGE
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-3.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-4.5V -10V
-ID, DRAIN CURRENT(A)
Figure Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-14.5A
rDS(on), DRAIN SOURCE
ON-RESISTANCE
-10V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
150oC
25oC
JUNCTION TEMPERATURE
-VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
-ID, DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 150oC
Figure On-Resistance Gate Source Voltage
-IS, REVERSE DRAIN CURRENT
0.01
150oC
25oC
25oC
-55oC
-55oC
1E-3
-VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
FDS6673BZ Rev.
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FDS6673BZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-VGS, GATE SOURCE VOLTAGE(V)
-10V -15V -20V
6000
Ciss Coss
CAPACITANCE (pF)
1000
Crss
1MHz
GATE CHARGE(nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics
1000
-Ig(uA)
150oC
Figure Capacitance Drain Source Voltage
-IAS, AVALANCHE CURRENT(A)
0.01 1E-3 1E-4 -VGS(V)
25oC
25oC
125oC
tAV, TIME AVALANCHE(ms)
Figure
Figure Unclamped Inductive Switching Capability
-ID, DRAIN CURRENT
-ID, DRAIN CURRENT
10us
-10V
100us
-4.5V
100ms
OPERATION THIS AREA LIMITED rDS(on) SINGLE PULSE TJ=MAX RATED TA=25oC
0.01
AMBIENT TEMPERATURE(oC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Maximum Continuous Drain Current Ambient Temperature
Figure Forward Bias Safe Operating Area
FDS6673BZ Rev.
www.fairchildsemi.com
FDS6673BZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
P(Pk), PEAK TRANSIENT POWER
1000
-10V
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
-125
SINGLE PULSE
PULSE WIDTH
Figure Single Pulse Maximum Power Dissipation
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL IMPEDANCE,
0.05 0.02 0.01
0.01
SINGLE PULSE
NOTES: DUTY FACTOR: t1/t2 PEAK
1E-3
RECTANGULAR PULSE DURATION(s)
Figure Transient Thermal Response Curve
FDS6673BZ Rev.
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TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST® Quiet SeriesAcross board. Around world.The Power Franchise® Programmable Active DroopDISCLAIMER
PowerSaverPowerTrench® QFET® QSQT OptoelectronicsQuiet SWITCHER® SMART
SuperSOTTM-6 SuperSOTTM-8 SyncFETTCMTinyLogic® UniFETVCXWire
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8m Genera

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