Schematic SPCKT_10003.0 0.2V Supply Voltage Nanopower Two-Input N
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Category: Special Circuits
Schematic SPCKT_10003.0
0.2V Supply Voltage Nanopower Two-Input NAND gates
Description Simple logic gates such NAND gates readily implemented using EPAD MOSFETs operate ultra voltage current levels. supply voltages below EPAD MOSFETs actually likely always "off-state". They biased subthreshold region, whether state state logic. Consider case 200mV supply EPAD MOSFET with threshold 0.20V (ALD110802). output state, output near 0.2V EPAD MOSFET operating high subthreshold region, with drain current about 230nA. output state, EPAD MOSFET operating subthreshold region, with drain voltage near 0.0V drain current about 19nA. When multiple EPAD MOSFETs connected build logic gates, both state current voltage levels state current levels must satisfy desired output voltage operating temperature range criteria. Laboratory simulation results indicate that 0.2V practical operating voltage limit multiple stage logic circuits. Recommended Components EPAD MOSFETs: ALD110800 with R=22K; ALD110802 with MOhm; ALD110804 with Mohm. Other Related Circuit Ideas Schematic SPCKT_10002.0 0.2V Supply Voltage Nanopower Inverter Circuit
2005 Advanced Linear Devices, Inc. Information furnished Advanced Linear Devices, Inc. (ALD) believed accurate reliable. However, assumes responsibility such information infringement patent rights third parties that result from use. license granted implication otherwise under patent rights ALD. www.aldinc.com
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