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Schematic SPCKT_10002.0 0.2V Supply Voltage Nanopower Inverter Ci


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Category: Special Circuits
Schematic SPCKT_10002.0
0.2V Supply Voltage Nanopower Inverter Circuit
Description This ultra low-voltage basic inverter circuit using zero threshold (ALD110800) nanopower (ALD110802 ALD110804) EPAD MOSFETs. basic inverter uses MOSFETs ALD110802, powered with ranging from with I+(max) 0.24 This inverter operates subthreshold operating region EPAD MOSFET device, resulting extremely operating voltages currents. With 200mV supply, average power consumption about (nanoWatt), assuming duty cycle signal, output voltage VOL= output high voltage Another example this inverter circuit uses ALD110904 device (VGS(TH)=0.4V) load resistor 44MEG Ohm, resulting average current power dissipation 0.45 using supply single stage inverter applications, inverter operate 50mV single supply, with VOL=19 VOH= 31.5 load resistance MOhm average supply current average power dissipation 0.05 0.02 multiple stage applications, 200mV supply recommended stage inverter circuit been demonstrated with sufficient noise margins. Switching time inverter function load (resistance/capacitance). Recommended Components EPAD MOSFET: ALD110800 with R=22K; ALD110802 with MOhm; ALD110804 with Mohm. Other Related Circuit Ideas Schematic SPCKT_10003.0 0.2V Supply Voltage Nanopower Two-Input NAND gates
2005 Advanced Linear Devices, Inc. Information furnished Advanced Linear Devices, Inc. (ALD) believed accurate reliable. However, assumes responsibility such information infringement patent rights third parties that result from use. license granted implication otherwise under patent rights ALD. www.aldinc.com

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