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Schematic fet_11117.0 Ultra Voltage N-Channel Analog Switch (Tran
Top Searches for this datasheetSchematic fet_11117.0 Ultra Voltage N-Channel Analog Switch (Transmission Gate) Description EPAD MOSFET acts analog transmission switch when turned with appropriate gate voltage, where conducting channel forms between drain source terminals. on-resistance switch depends channel-on current controlled gate voltage. switch turned-on with positive bias voltage applied gate terminal enhancement mode EPAD MOSFET. switched signal propagates from source drain terminal, which either digital analog nature. user should take into account input output impedance levels relative channel on-resistance analog switch. analog switch turned-off grounding gate setting gate voltage 0.4V less below threshold voltage MOSFET selected. When turned-on, analog switch pass signal voltage gate voltage minus VGS(TH). When this circuit applied using device chosen from EPAD MOSFET Array family, minimum operating voltage EPAD MOSFET switch limited off-state drain leakage current allowed. this case, considering sub-threshold characteristics, analog digital switch could operated minimum supply voltage range 0.4V 0.2V. Depletion mode EPAD MOSFETs also employed this application. depletion mode MOSFET already turned when gate terminal grounded, which therefore requires negative voltage gate turn off. many applications, analog switch circuit using depletion EPAD MOSFET performs function that analogous that Form-C relay, with MOSFET normally-ON state without power gate bias voltage applied active, negative voltage gate terminal turn this analog switch off. single supply applications, this analog switch using depletion mode MOSFET perform equivalent duty high-side switch. Recommended Components EPAD MOSFETs: ALD110802; ALD110804; ALD110808; ALD110814. Other Related Circuit Ideas 2005 Advanced Linear Devices, Inc. Information furnished Advanced Linear Devices, Inc. (ALD) believed accurate reliable. However, assumes responsibility such information infringement patent rights third parties that result from use. license granted implication otherwise under patent rights ALD. www.aldinc.com Other recent searchesMUR420 - MUR420 MUR420 Datasheet MUR460 - MUR460 MUR460 Datasheet IPB03N03LB - IPB03N03LB IPB03N03LB Datasheet IDT7005S - IDT7005S IDT7005S Datasheet HFA3424 - HFA3424 HFA3424 Datasheet COP400 - COP400 COP400 Datasheet CLV1548A-LF - CLV1548A-LF CLV1548A-LF Datasheet BF844 - BF844 BF844 Datasheet AX32X0 - AX32X0 AX32X0 Datasheet 8m122645 - 8m122645 8m122645 Datasheet
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