Schematic fet_11116.0 Ultra voltage Nanopower Two-Input NAND gate
|
|
|
Top Searches for this datasheet
Schematic fet_11116.0
Ultra voltage Nanopower Two-Input NAND gates
Description Simple logic gates such NAND gates readily implemented using EPAD MOSFETs operate ultra voltage current levels. supply voltages below EPAD MOSFETs actually likely always "off-state". They biased operating with sub-threshold currents, whether logic state. Consider case 200mV supply EPAD MOSFET with threshold 0.20V (ALD110802). output state, output near 0.2V EPAD MOSFET operating high subthreshold region, with drain current about 230nA. output state, EPAD MOSFET operating sub-threshold region, with drain voltage near 0.0V drain current about 19nA. When multiple EPAD MOSFETs connected build logic gates, both state state current voltage levels must satisfy desired logical output voltage levels operating temperature range criteria. Laboratory simulation results indicate that 0.2V practical operating voltage limit multiple stage logic circuits. Recommended Components EPAD MOSFETs: ALD110800 with R=22K; ALD110802 with MOhm; ALD110804 with MOhm. Other Related Circuit Ideas Schematic fet_11115.0 Ultra Voltage Nanopower Inverter Circuit
2005 Advanced Linear Devices, Inc. Information furnished Advanced Linear Devices, Inc. (ALD) believed accurate reliable. However, assumes responsibility such information infringement patent rights third parties that result from use. license granted implication otherwise under patent rights ALD. www.aldinc.com
Other recent searches
UPC1678GV - UPC1678GV UPC1678GV Datasheet
SJ4473 - SJ4473 SJ4473 Datasheet
POTENTIOMETER---------WR3266W - POTENTIOMETER---------WR3266W POTENTIOMETER---------WR3266W Datasheet
IDT74CSP5818 - IDT74CSP5818 IDT74CSP5818 Datasheet
FOA4400 - FOA4400 FOA4400 Datasheet
CS5340 - CS5340 CS5340 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
