Schematic fet_11115.0 Ultra Voltage Nanopower Inverter Circuit

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Schematic fet_11115.0 Ultra Voltage Nanopower Inverter Circuit

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Schematic fet_11115.0
Ultra Voltage Nanopower Inverter Circuit
Description This ultra low-voltage nanopower inverter circuit using zero threshold (ALD110800) nanopower (ALD110802 ALD110804) EPAD MOSFETs. basic inverter uses MOSFETs ALD110802, powered with ranging from with I+(max) 0.24 This inverter operated subthreshold operating region EPAD MOSFET device, resulting extremely operating voltages currents. Powered with 200mV supply, average power consumption about nW(nanoWatt), assuming duty cycle 1KHz signal, giving VOL= Another configuration example this inverter circuit uses ALD110904 device, with VGS(TH) 0.4V load resistor 44MEG Ohm, resulting average current drain power dissipation 0.45 supply voltage 200mV. single stage inverter applications, inverter operate 50mV single supply. Switching between output voltages Vol=19 VOH= 31.5 load resistance MOhm average supply current 50mV inverter circuit consumes average power dissipation 0.05 0.02nW. multiple stage applications, 200mV supply recommended. 4-stage 200mV powered inverter circuit been demonstrated switch with adequate noise margins. Recommended Components EPAD MOSFET: ALD110800 with R=22K; ALD110802 with MOhm; ALD110804 with Mohm. Other Related Circuit Ideas Schematic fet_11116.0 Ultra Voltage Nanopower Two-Input NAND gates
2005 Advanced Linear Devices, Inc. Information furnished Advanced Linear Devices, Inc. (ALD) believed accurate reliable. However, assumes responsibility such information infringement patent rights third parties that result from use. license granted implication otherwise under patent rights ALD. www.aldinc.com

Schematic fet_11115.0 Ultra Voltage Nanopower Inverter Circuit

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