Silicon Planar Diodes Very reverse current Applications Prot

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Silicon Planar Diodes Very reverse current Applications Prot

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BAS33.BAS34
Silicon Planar Diodes Very reverse current
Applications
Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
9367
Order Instruction
Type BAS33 BAS34 Type Differentiation VRRM VRRM Ordering Code BAS33-TAP BAS34-TAP Remarks Tape Reel Tape Reel
Absolute Maximum Ratings
25_C Parameter Reverse voltage Peak forward surge current Forward current Junction temperature Storage temperature range tp=1ms Test Conditions Type BAS33 BAS34 Symbol IFSM Tstg Value -65.+200 Unit
Maximum Thermal Resistance
25_C Parameter Junction ambient Test Conditions TL=constant Symbol RthJA Value Unit
Document Number 85541 Rev. 14-Feb-01
www.vishay.com
BAS33.BAS34
Vishay Semiconductors Electrical Characteristics
25_C Parameter Forward voltage Reverse current Test Conditions IF=100mA 300lx, 300lx, Tj=125 300lx, VR=15 300lx, VR=30 IR=5mA, tp/T=0.01, tp=0.3ms IR=5mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz Type Symbol V(BR) V(BR) Unit
Breakdown voltage Diode capacitance
BAS33 BAS34 BAS33 BAS34
Characteristics 25_C unless otherwise specified)
10000 Reverse Current VRRM 1000 Scattering Limit Forward Current 1000 25°C Scattering Limit
9079
9078
Junction Temperature
Forward Voltage
Figure Reverse Current Junction Temperature
Figure Forward Current Forward Voltage
Dimensions
Cathode Identification 0.55 max.
technical drawings according specifications 9366
max.
Standard Glass Case 41880 JEDEC Weight max.
min.
max.
min.
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Document Number 85541 Rev. 14-Feb-01
BAS33.BAS34
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer VishaySemiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Document Number 85541 Rev. 14-Feb-01
www.vishay.com

Silicon Planar Diodes Very reverse current Applications Prot

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