Small SIgnal Schottky Barrier Diodes Integrated protection ring a
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BAS281.BAS283
Small SIgnal Schottky Barrier Diodes
Integrated protection ring against
static discharge
capacitance leakage current forward voltage drop Very switching time
12009
Applications
General purpose switching Schottky barrier diode HF-Detector Protection circuit Diode currents with supply voltage Small battery charger Power supplies converter notebooks
Order Instruction
Type BAS281 BAS282 BAS283 Type Differentiation Ordering Code BAS281-GS08 BAS282-GS08 BAS283-GS08 Remarks Tape Reel Tape Reel Tape Reel
Absolute Maximum Ratings
25_C Parameter Reverse voltage Test Conditions Type BAS281 BAS282 BAS283 Symbol Value -65.+150 Unit
Peak forward surge current Repetitive peak forward current Forward current Junction temperature Storage temperature range
tp=1s
IFSM IFRM Tstg
Maximum Thermal Resistance
25_C Parameter Junction ambient Test Conditions board mmx50 mmx1.6 Symbol RthJA Value Unit
Document Number 85500 Rev. 31-Jan-01
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BAS281.BAS283
Vishay Semiconductors Electrical Characteristics
25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=0.1mA IF=1mA IF=15mA VR=VRmax VR=1 f=1MHz Type Symbol Unit
Characteristics 25_C unless otherwise specified)
Reverse Power Dissipation
15794
1000 150°C 25°C 0.01
15796
RthJA= 540K/W
PR-Limit @100%VR
PR-Limit @80%VR
Forward Current
Junction Temperature
Forward Voltage
Figure Max. Reverse Power Dissipation Junction Temperature
1000.0 VRRM
Figure Forward Current Forward Voltage
Diode Capacitance
15797
f=1MHz
Reverse Current
100.0
10.0
15795
10.0
100.0
Junction Temperature
Reverse Voltage
Figure Reverse Current Junction Temperature
Figure Diode Capacitance Reverse Voltage
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Document Number 85500 Rev. 31-Jan-01
BAS281.BAS283
Vishay Semiconductors Dimensions
12071
Document Number 85500 Rev. 31-Jan-01
www.vishay.com
BAS281.BAS283
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
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Document Number 85500 Rev. 31-Jan-01
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