Small Signal Schottky Barrier Diode Integrated protection ring ag

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Small Signal Schottky Barrier Diode Integrated protection ring ag

Datasheet Thumbnail

Top Searches for this datasheet

BAS286
Small Signal Schottky Barrier Diode
Integrated protection ring against static
discharge
Very forward voltage
Applications
Applications where very forward voltage required
12009
Order Instruction
Type BAS286 Type Differentiation Ordering Code BAS286-GS08 Remarks Tape Reel
Absolute Maximum Ratings
25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions Type Symbol IFSM IFRM IFAV Tstg Value -65.+150 Unit
Maximum Thermal Resistance
25_C Parameter Junction ambient Test Conditions board mmx50 mmx1.6 Symbol RthJA Value Unit
Document Number 85502 Rev. 12-Feb-01
www.vishay.com
BAS286
Vishay Semiconductors Electrical Characteristics
25_C Parameter Test Conditions IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=40 VR=1 f=1MHz Type Symbol Unit
Forward voltage
Reverse current Diode capacitance
Characteristics 25_C unless otherwise specified)
Reverse Power Dissipation
15827
1000 Forward Current 150°C 25°C PR-Limit @100%VR
RthJA= 540K/W
PR-Limit @80%VR
15829
Junction Temperature
Forward Voltage
Figure Max. Reverse Power Dissipation Junction Temperature
10000 VRRM
Figure Forward Current Forward Voltage
Diode Capacitance
15830
f=1MHz
Reverse Current
1000
15828
10.0
100.0
Junction Temperature
Reverse Voltage
Figure Reverse Current Junction Temperature
Figure Diode Capacitance Reverse Voltage
www.vishay.com
Document Number 85502 Rev. 12-Feb-00
BAS286
Vishay Semiconductors Dimensions
12071
Document Number 85502 Rev. 12-Feb-01
www.vishay.com
BAS286
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
www.vishay.com
Document Number 85502 Rev. 12-Feb-00

Small Signal Schottky Barrier Diode Integrated protection ring ag

Top Searches for this datasheet

Other recent searches