APT15GP60BSC POWER IGBT TO-247 POWER IGBT generation hi

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APT15GP60BSC POWER IGBT TO-247 POWER IGBT generation hi

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APT15GP60BSC
APT15GP60BSC
POWER IGBT
TO-247
POWER IGBT generation high voltage power IGBTs. Using Punch Through Technology this IGBT ideal many high frequency, high voltage switching applications been optimized high frequency switchmode power supplies.
Conduction Loss Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGEM SSOA TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
operation 400V, operation 400V, SSOA rated
Ratings: 25°C unless otherwise specified.
APT15GP60BSC UNIT
600V
Watts Amps Volts
Continuous Collector Current 25°C Continuous Collector Current 110°C Pulsed Collector Current
25°C
Switching Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic Test Conditions Collector-Emitter Breakdown Voltage (VGE 500µA) Gate Threshold Voltage (VCE VGE, 1mA, 25°C) UNIT
Collector-Emitter Voltage (VGE 15V, 15A, 25°C) Collector-Emitter Voltage (VGE 15V, 15A, 125°C) Collector Cut-off Current (VCE 600V, 25°C)
Volts
Gate-Emitter Leakage Current (VGE ±20V)
±100
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
050-7448
7-2004
Collector Cut-off Current (VCE 600V, 125°C)
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP SSOA td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff Symbol Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT15GP60BSC
Test Conditions Capacitance Gate Charge 300V 150°C, 15V, 100µH,VCE 600V Inductive Switching (25°C) 400V
UNIT
1685
UNIT °C/W
Gate-Emitter Charge Gate-Collector ("Miller Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction Case (IGBT) Junction Case (DIODE) Package Weight
+25°C
Turn-on Switching Energy (Diode)
Inductive Switching (125°C) 400V +125°C
Turn-on Switching Energy (Diode)
THERMAL MECHANICAL CHARACTERISTICS 5.90
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT Silicon Carbide Schottky leakages MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on-energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. (See Figure 24.) Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. (See Figures 22.) Eoff clamped inductive turn-off energy measured accordance with JEDEC standard JESD24-1. (See Figures 23.)
Reserves right change, without notice, specifications information contained herein.
050-7448
7-2004
TC=25°C TC=125°C TC=-55°C
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
APT15GP60BSC
10V. 250µs PULSE TEST <0.5 DUTY CYCLE
COLLECTOR CURRENT
COLLECTOR CURRENT
TC=25°C TC=125°C TC=-55°C
VCE, COLLECTER-TO-EMITTER VOLTAGE
250µs PULSE TEST <0.5 DUTY CYCLE
VCE, COLLECTER-TO-EMITTER VOLTAGE
25°C
FIGURE Output Characteristics(VGE 15V) -55°C
VGE, GATE-TO-EMITTER VOLTAGE
FIGURE Output Characteristics (VGE 10V) GATE CHARGE (nC) FIGURE Gate Charge 480V
COLLECTOR CURRENT
120V 300V
25°C 125°C VGE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
25°C. 250µs PULSE TEST <0.5 DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
=30A
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
7.5A
=30A 7.5A
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to- Emitter Voltage
Junction Temperature (°C) FIGURE State Voltage Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 0.95 0.85
COLLECTOR CURRENT(A)
1.15
CASE TEMPERATURE (°C) FIGURE Collector Current Case Temperature
7-2004 050-7448
JUNCTION TEMPERATURE (°C) FIGURE Breakdown Voltage Junction Temperature
(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
=15V,TJ=125°C
APT15GP60BSC
400V
400V 25°C, =125°C VGE=
=15V,TJ=25°C
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current 100µH, 400V
FALL TIME (ns)
RISE TIME (ns)
125°C,
25°C,
125°C,VGE
100µH, 400V
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Rise Time Collector Current
EON2, TURN ENERGY LOSS (µJ)
400V +15V
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Fall Time Collector Current
EOFF, TURN ENERGY LOSS (µJ)
400V +15V
125°C,VGE =15V
125°C,
25°C,VGE =15V
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current Eon2,
SWITCHING ENERGY LOSSES (µJ)
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn Energy Loss Collector Current
SWITCHING ENERGY LOSSES (µJ)
400V +15V
Eoff, 7.5A Eon2, 7.5A Eoff, Eon2,
400V +15V 125°C
Eoff,
Eoff,30A
Eon2,30A Eon2,7.5A Eoff, Eoff, 7.5A Eon2,15A
7-2004
050-7448
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
4,000
COLLECTOR CURRENT
Cies
APT15GP60BSC
1,000
CAPACITANCE
Coes Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure Capacitance Collector-To-Emitter Voltage
VCE, COLLECTOR EMITTER VOLTAGE Figure Minimim Switching Safe Operating Area
0.60 0.50 0.40 0.30
ZJC, THERMAL IMPEDANCE (°C/W)
Note:
0.20
0.10
0.05 10-5 10-4 SINGLE PULSE
Peak
Duty Factor t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case Pulse Duration
Junction temp. 0.216 Power (Watts) 0.284 Case temperature 0.164 0.00600
FMAX, OPERATING FREQUENCY (kHz)
MODEL
125°C 75°C 400V
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
COLLECTOR CURRENT Figure Operating Frequency Collector Current
Fmax min(f max1 max1 Pdiss 0.05 d(off Pdiss Pcond
7-2004 050-7448
APT15GP60BSC
APT10SC60
td(on) Gate Voltage 125°C
Drain Current
D.U.T.
Switching Energy
DrainVoltage
Figure Inductive Switching Test Circuit Figure Turn-on Switching Waveforms Definitions
VTEST *DRIVER SAME TYPE D.U.T.
Gate Voltage td(off)
125°C
100uH CLAMP
DrainVoltage
Drain Current
Switching Energy
DRIVER* D.U.T.
Figure Turn-off Switching Waveforms Definitions
Figure EON1 Test Circuit
050-7448
7-2004
APT15GP60BSC
SILICON CARBIDE SCHOTTKY RECTIFIER DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol Characteristic Test Conditions Maximum Average Forward Current 130°C, Duty Cycle 0.5) Forward Current Non-Repetitive Forward Surge Current 25°C, 10µs)
Ratings: 25°C unless otherwise specified.
APT15GP60BSC UNIT Amps
UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS
Characteristic Test Conditions Forward Voltage 15A, 175°C
DYNAMIC CHARACTERISTICS
Symbol
Characteristic Test Conditions Capacitance 400V, 25°C, MHz) Total Capacitive Charge 600V, 20A, diF/dt 500A/µs, 25°C) Forward Recovery Time Reverse Recovery Time
Peak Diode Recovery 480V, di/dt 1000A/µs, 25°C)
majority carrier device, there reverse recovery charge. zero recoveryTM, Trademark CREE INC.
1.20
THERMAL IMPEDANCE (°C/W)
1.10 0.80 0.60 0.40 0.20
Note:
0.05 10-5 10-4
SINGLE PULSE
Peak
Duty Factor t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
MODEL Junction temp (°C)
Power (watts) 0.412 °C/W Case temperature (°C) 0.0572 J/°C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7448
7-2004
0.688 °C/W
0.00215 J/°C
-55°C
FORWARD CURRENT REVERSE CURRENT (µA)
APT15GP60BSC
25°C 75°C 125°C 175°C
25°C 75°C 125°C 175°C
ANODE-TO-CATHODE VOLTAGE Figure Forward Current Forward Voltage
CATHODE-TO-ANODE VOLTAGE Figure Reverse Current Reverse Voltage
25°C 400V
Case Temperature (°C) Figure Current Derating
JUNCTION CAPACITANCE (pF) (AV) FORWARD CURRENT
REVERSE VOLTAGE Figure Junction Capacitance Reverse Voltage
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
7-2004
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
050-7448
Dimensions Millimeters (Inches)
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APT15GP60BSC POWER IGBT TO-247 POWER IGBT generation hi

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