CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET TYPE STW55NE10

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CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET TYPE STW55NE10

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STW55NE10
CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET
TYPE STW55NE10
VDSS
DS(on) <0.027
TYPICAL RDS(on) 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor dv/dt Peak Diode Recovery voltage slope Tstg Storage Temperature Max. Operating Junction Temperature
Value
di/dt A/µs, V(BR)DSS, TJMAX
Unit V/ns
Pulse width limited safe operating area
January 1999
STW55NE10
THERMAL DATA
thj-case
Rthj-amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
0.83
oC/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) D(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions 27.5 Min. Typ. 0.021 Max. 0.027 Unit
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. 4350 Max. Unit
STW55NE10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions =4.7 (see test circuit, figure Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions =4.7 (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 10.5 di/dt A/µs (see test circuit, figure Test Conditions Min. Typ. Max. 1100 Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance
STW55NE10
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STW55NE10
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STW55NE10
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW55NE10
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW55NE10
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET TYPE STW55NE10

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