DC-DC Application Surface Mount Package Dual N-channel Device adv
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AF6930N
DC-DC Application Surface Mount Package Dual N-channel Device
advanced power MOSFET provides designer with best combination fast switching, ruggedized device design, ultra on-resistance cost-effectiveness.
Product Summary
BVDSS RDS(ON)
Assignments
Descriptions
Name S1/2 G1/2 D1/2
Description Source Gate Drain
SOP-8
Ordering information
Feature :MOSFET 6930N Package SOP-8 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF6930N
N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 0.016 Units
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note Max. Maximum 62.5 Units
Electrical Characteristics unless otherwise specified
Symbol BVDSS BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=3.9A VDS=VGS, ID=250uA VDS=15V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=5A, VDS=15V, VGS=5V VDS=15V, ID=1.5A, RG=3.3, VGS=10V RD=10 VGS=0V, VDS=25V, f=1.0MHz Min. Typ. 0.037 22.1 Max. ±100 Units V/oC
Source-Drain Diode
Symbol Parameter Continuous Source Current (Body Diode) Forward Voltage (Note
Test Conditions VD=VG=0V, VS=1.2V IS=1.7A, VGS=0V
Min.
Typ.
Max. 1.67
Unit
Note Surface mounted copper board; when mounted Min. copper pad. Note Pulse width limited Max. junction temperature. Note Pulse width 300us, duty cycle
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF6930N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Maximum Drain Current v.s. Case Temperature
Typical Power Dissipation
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF6930N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Gate Charge Characteristics
Typical Capacitance Characteristics
Forward Characteristic Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF6930N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Switching Time Circuit
Switching Time Waveform
Gate Charge Circuit
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF6930N
N-Channel Enhancement Mode Power MOSFET Marking Information
SOP-8L
View
Logo Part Number
6930N
code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: =2004 Factory code
Package Information
Package Type: SOP-8L
VIEW (4X)
0.015x45
(4X)
VIEW
Symbol
Dimensions Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10
Dimensions Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004
Anachip Corp. www.anachip.com.tw
Rev.
2004
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