une, 2006 ES/EMY1421HI 11.3 Gb/s Modulator Driver +3.3V Supp

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une, 2006 ES/EMY1421HI 11.3 Gb/s Modulator Driver +3.3V Supp

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ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
ES/EMY1421HI
11.3 Gb/s Modulator Driver +3.3V Supplied Voltage
Abstr
Operation speed over 11.3Gb/s Output Amplitude: 1.4Vpp 3.0Vpp (typ.,50ohm Load) Cross Point Adjustable: -85% Output High Voltage Offset: 1.2V (typ.,50ohm Load) Internal Input Termination 24-pin Hermetically Sealed Ceramic Package
Absolute Maximum Ratings
semiconductor devices permanently damaged application stress (voltage, current, temperature, etc.) excess absolute maximum ratings. exceed these ratings. normal logic operation assured even within ratings. Table Absolute Maximum Ratings
ameter Supply Voltage Output mination Voltage Input Voltage (Din, DinB) Supply Output Amplitude Contr Voltage
Output High Voltage Offset Contr Voltage Duty Contr Voltage (VDUTY, VDUTYB) Output Voltage (Dout, DoutB)
Symbol
VDUTY VDUTYB Vout Tstg
Value -1.0 -1.0 -1.0 -1.0 -1.0 -0.5
Unit degC
Stor Temper atur
This device contains Gallium Arsenide (GaAs). safety, please obser following:
GaAs
CAUTION
document
devices your mouth. Gallium senide danger ingested. crush, process chemically. dangerous inhale ingest gas, powder, liquid, which esults ning, crushing chemical ocessing devices. Discar devices separ ately industr domestic wastes accor dance with method specified law.
Eudyna Device Inc. assumes customer eement notes last page infor mation this
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ECM-A00-226 Eudyna Device Inc.
ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Recommended Oper ating Conditions
recommended operating conditions recommended values assuring normal operation long-term reliability. Table Recommended Oper ating Conditions Limit ameter Supply Voltage Symbol Output inter face Coupled Output inter face Coupled Differ ential Input coupled) Condition Min. 3.10 4.75 3.10 0.15 Typ. -1.2 -Max. 3.50 5.25 3.50 DegC Unit
Supply Voltage Output Stage
Input Data Swing Output Amplitude Contr Voltage Output Offset Contr Voltage
VDUTY
Duty Contr Voltage VDUTYB Case Temper atur
Note Refer Output Inter face Application (Fig. 10-1 Application Coupled) below. Refer Output Inter face Application (Fig. 10-2 Application Coupled using bias-T) below. Power sequence: VDD, VDUTY, VDUTYB, VIB, Exter capacitor necessar data input minals (Din, DinB) blocking.
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ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Electr ical Char acter istics
Table 4-1. Electr ical Char acter istics: Data Output (VDD=3.3V, =5.0V, Tc=25degC, L=50ohm, Unless Specified.) Limit ameter Symbol Condition Unit Unit Min. Typ. Max.
Maximum Data Rate Supply
11.3
-100
-TBD -TBD -TBD
Gb/s
Maximum Output Amplitude
VOUT (MAX)
coupled, =5.0V 500Mbps, Minimum Output Offset coupled using bias-T, =3.3V, 500Mbps, Minimum Output Offset
-TBD
Minimum Output Amplitude Maximum Output Offset Minimum Output Offset
Minimum Output Voltage Rise Time
VOUT (MIN) VOFF (MAX) VOFF (MIN) (MIN) (min)
VIND=0.5Vpp Minimum Output Offset coupled coupled coupled, fb=500Mb/s, 1,0,1,0.Alter native Patter eshold=20 VOUT =2.0Vpp fb=11.3Gb/s, NRZ, PRBS 231-1, VIND =0.5Vpp VOUT =2.0Vpp Input ossing Point: fb=11.3Gb/s, NRZ, PRBS 231-1, VIND =0.5Vpp VOUT =2.0Vpp Input ossing Point: Output ossing Point:
Fall Time
ossing Adjustment Range (max)
itter
itter
Complementary Data output port characteristics TBD.
VOFF VOUT ossing point
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ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Block Diagr
Figur 5-1. Block Diagr
VDUTY
VDUTYB
IPmon
Crosspoint Control
Voltage Driver
ohm*
ohm*
Dout DoutB
ohm* ohm*
DinB
Bias Current Circuit Bias Circuit
chip resistor values vary.
IBmon
Function
Data Input Output Table Table table Data
DinB
OutB
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ES/EMY1421HI Preliminary Datasheet Rev1.1
Output Amplitude Monitor (Example)
une, 2006
VOUT IPmon 0.50 0.45 0.40
IPmon
0.35 0.30 0.25 0.20 VOUT
Output Offset Monitor (Example)
VOFF IBmon 0.20 0.16
IBmon
0.12 0.08 0.04 0.00 VOFF
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ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Descr iption
Table Descr iption
Symbol Description RF/DC Remarks
DinB IBmon Dout DoutB IPmon VDUTYB VDUTY
Complementary Data Input Data Input Supply Voltage Termination Voltage Output Offset Monitor Termination Voltage Data Output Termination Voltage Termination Voltage Complementary Data Output Termination Voltage Output Offset Control Voltage Output Amplitude Monitor Output Amplitude Control Voltage Supply Voltage Duty Control Reference Voltage Duty Control Voltage
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ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Package
Fig. Package Outline
[Unit:
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ECM-A00-226 Eudyna Device Inc.
ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Test cuit
Figur Schematic Diagr Test cuit ES/EMY1421HI
VDUTY
VDUTYB
IPmon
Sampling Oscilloscope Bias-T
VDUTYB VDUTY IPmon
Zo=50 Pulse Pattern Generator Zo=50
DoutB Dout
Zo=50
DinB
Zo=50 Bias-T
IBmon
IBmon
0.33uF 0.068uF 50ohm
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ES/EMY1421HI Preliminary Datasheet Rev1.1
une, 2006
Output Inter face Application (Example)
Fig. 10-1 Application Coupled
VTT=5.0V
DoutB Dout
ES/EMY1421HI
Modulator
Fig. 10-2 Application Coupled using bias-T
VTT=3.3V
DoutB
Dout Modulator ES/EMY1421HI bias current
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ECM-A00-226 Eudyna Device Inc.
ES/EMY1421HI Preliminary Datasheet Rev1.1
This device contains Gallium senide(GaAs). safety, please obser following:
une, 2006
GaAs
devices your mouth. Gallium senide danger ingested. ush, ocess chemically. danger inhale ingest gas, powder liquid, which esults ning, ushing chemical ocessing devices. Discar devices separ ately industr domestic wastes accor dance with method specified law.
CAUTION
Notice: This document contains preliminary information products. specification subject change without notice. Customers advised consult with Eudyna sales representatives before ordering. information, such descriptions function application circuit examples, this document presented solely purpose reference show examples operations uses Eudyna semiconductor device; Eudyna does warrant proper operation device with respect based such information. When develop equipment incorporating device based such information, must assume responsibility arising such information. Eudyna assumes liability damages whatsoever arising information. information this document, including descriptions function schematic diagrams, shall construed license exercise intellectual property right, such patent right copyright, other right Eudyna third party does Eudyna warrant non-infringement third-party's intellectual property right other right using such information. Eudyna assumes liability infringement intellectual property rights other rights third parties which would result from information contained herein. products described this document designed, developed manufactured contemplated general use, including without limitation, ordinary industrial use, general office use, personal use, household use, designed, developed manufactured contemplated accompanying fatal risks dangers that, unless extremely high safety secured, could have serious effect public, could lead directly death, personal injury, severe physical damage other loss (i.e., nuclear reaction control nuclear facility, aircraft flight control, traffic control, mass transport control, medical life support system, missile launch control weapon system), requiring extremely high reliability (i.e., submersible repeater artificial satellite). Please note that Eudyna will liable against and/or third party claims damages arising connection with above-mentioned uses products. semiconductor devices have inherent chance failure. must protect against injury, damage loss from such failures incorporating safety design measures into your facility equipment such redundancy, fire protection, prevention over-current levels other abnormal operating conditions. products described this document represent goods technologies subject certain restrictions export under Foreign Exchange Foreign Trade Japan, prior authorization Japanese government will required export those products from Japan.
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une, 2006 ES/EMY1421HI 11.3 Gb/s Modulator Driver +3.3V Supp

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