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1N1199A 1N1206A, 1N3671, 1N3673, PBY271 PB27Silicon-Power-Rectifiers V


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1N1199A 1N1206A, 1N3671, 1N3673, PBY271 PB27
1N1199A 1N1206A, 1N3671, 1N3673, PBY271 PB27Silicon-Power-Rectifiers Version 2006-04-26
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case Weight approx. Gewicht Standard polarity: Cathode stud Kathode Gewinde Index Anode stud Anode Gewinde 1N1199AR) Standard packaging: bulk Standard Lieferform: lose Karton
1000 DO-4
SW11
Dimensions [mm]
Maximum ratings Type 1N1199A PBY271 1N1200A PBY272 1N1202A PBY273 1N1204A PBY274 1N1206A PBY275 1N3671 PBY276 1N3673 PBY277 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM 1000
Type
Grenzwerte Surge peak reverse voltage VRSM 1000 1200
Max. average forward rectified current, R-load Dauergrenzstrom Einwegschaltung R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 half sine-wave eine 50/60 Sinus-Halbwelle Rating fusing, Grenzlastintegral, Operating junction temperature Sperrschichttemperatur Storage temperature Lagerungstemperatur
85°C 25°C 25°C
IFAV IFRM IFSM
200/240 -65.+175°C -65.+175°C
Max. case temperature 85°C Max. 85°C http://www.diotec.com/
Diotec Semiconductor
1N1199A 1N1206A, 1N3671, 1N3673, PBY271 PB27
Characteristics Forward Voltage Fluss-Spannung Leakage Current Sperrstrom Thermal Resistance Junction Case Sperrschicht Recommended mounting torque Empfohlenes Anzugsdrehmoment 10-20 25°C 25°C VRRM RthC
Kennwerte lb.in.
125°C 25°C
IFAV [°C] 10-1
220a-(30a-1,5v)
Rated forward current versus case temperature Zul. Richtstrom Abh.
Forward characteristics (typical values) Durchlasskennlinien (typische Werte)
Peak forward surge current versus number cycles Abh. Zahl Halbwellen
Diotec Semiconductor
http://www.diotec.com/

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