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AP4407F / I

Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D

AP4407F / I
Advanced Power Electronics Corp.
Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 14m -40A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
TO-220FM(F)
The TO-220 isolation package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC / DC converters and high current , high speed switching circuits.
Absolute Maximum Ratings
TO-220CFM(I) Units V V A A A W W /
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.72 65 Units / W / W
Data and specifications subject to change without notice
AP4407F / I
Symbol BVDSS
BVDSS / Tj
Parameter Drain-Source Breakdown Voltage
Min. -30 -1 -
Typ. -0.01 36 35 5 26 11 64 63 100 630 550
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
Min. -
Typ. 39 38
Max. Units -1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
AP4407F / I
-10V -8.0V
-10V -8.0V -6.0V
-ID , Drain Current (A)
-6.0V
-4.5V
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(ON) (m )
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
-IS(A)
-VGS(th) (V)
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature (
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP4407F / I
-VGS , Gate to Source Voltage (V)
C iss C (pF)
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
-ID (A)
100us 1ms
10ms 100ms DC
Single Pulse
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG QG -4.5V QGS QGD
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform