100% Avalanche Test Fast Switching Characteristic Simple Drive Require

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

100% Avalanche Test Fast Switching Characteristic Simple Drive Require

Datasheet Thumbnail

Top Searches for this datasheet

AP04N70BP-A
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
650V
Description
AP04N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 package universally preferred commercialindustrial applications. device suited switch mode power supplies ,DC-AC converters high current high speed switching circuits.
TO-220
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 62.5
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Units
200302072-1/6
Data specifications subject change without notice
AP04N70BP-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ. 16.7 23.8
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=600V, VGS=0V VDS=480V,VGS=0V VGS=±30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited max. junction temperature.
2.Starting Tj=25 VDD=50V L=25mH RG=25 IAS=4A.
Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=4A, VGS=0V
3.Pulse test
AP04N70BP-A
=10V =6.0V =5.0V
=150
=10V =6.0V =5.0V =4.5V
Drain Current
=4.5V
Drain Current
=4.0V
=4.0V =3.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
AP04N70BP-A
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
Normalized Thermal Response (Rthjc)
DUTY=0.5
10us 100us
0.05
10ms
0.02 0.01 SINGLE PULSE
Duty factor Peak Rthjc
100ms Single Pulse
0.01 1000 10000
0.01 0.00001 0.0001 0.001 0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP04N70BP-A
10000
f=1.0MHz
Gate Source Voltage
=320V =400V
Ciss
=480V (pF)
Coss
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
VGS(th)
=150
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP04N70BP-A
OSCILLOSCOPE 0.5x RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform

100% Avalanche Test Fast Switching Characteristic Simple Drive Require

Top Searches for this datasheet

Other recent searches