Image Reject Mixer drain Chip Size: 1300 1400 Chip Size Tole

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Image Reject Mixer drain Chip Size: 1300 1400 Chip Size Tole

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AMMC-6530
Image Reject Mixer
drain
Chip Size: 1300 1400 Chip Size Tolerance: (±0.4 mils) Chip Thickness: mils)
gate
Description Avago's AMMC-6530 image reject mixer that operates from GHz. cold channel mixer designed easy-to-use component chip wire application. used drain pumped conversion loss applications, when gate pumped mixer provide high linearity up-conversion. external 90-degree hybrid used achieve image rejection voltage reference needed. Intended applications include microwave radios, 802.16, VSAT, satellite receivers. Since this mixer cover several bands, AMMC-6530 reduce part inventory. integrated mixer eliminates complex tuning assembly processes typically required hybrid (discrete-FET diode) mixers. improved reliability moisture protection, passivated active areas.
Features Broad Band Performance Conversion Loss High Image Rejection Good Order Intercept Single -1V, current Supply Bias Applications Microwave Radio Systems Satellite VSAT, Up/Down Link LMDS Pt-Pt Long Haul Broadband Wireless Access (including 802.16 802.20 WiMax) MMDS loops Commercial grade military
Absolute Maximum Ratings
Symbol
Tstg Tmax
Parameters/Conditions
Gate Supply Voltage Input Power Operating Channel Temperature Storage Case Temperature Max. Assembly Temp max)
Units
Min.
Max.
+150
+150 +300
Note: Operation excess these conditions result permanent damage this device.
Attention: Observe precautions handling electrostatic sensitive devices. Machine Model (Class Human Body Model (Class Refer Avago Application Note A004R: Electrostatic Discharge Damage Control.
AMMC-6530 Specifications/Physical Properties[1]
Symbol
Parameters Test Conditions
Gate Supply Current (under power drive temperature) Gate Supply Operating Voltage
Units
Typ.
Note: Ambient operational temperature TA=25°C unless otherwise noted.
AMMC-6530 Typical Performance 25°C, -1V, frequency GHz,
Symbol
Parameters Test Conditions
Frequency Range Frequency Range Frequency Range
Units
Gate Pumped
Drain Pumped
Down Conversion
RL_RF RL_LO RL_IF LO-RF Iso. LO-IF Iso. RF-IF Iso. IIP3 Port Pumping Power Conversion Gain Port Return Loss Port Return Loss Port Return Loss Image Rejection Ratio Port Isolation Port Isolation Port Isolation Input IP3, Fdelta=100 MHz, dBm, Input Port Power gain compression point, Plo=+10 Noise Figure
Conversion
Down Conversion
Notes: Small/Large signal data measured fully de-embedded test fixture form 25°C. Specifications derived from measurements test environment.
AMMC-6530 Specifications Drain Pumped Test Configuration[4,
25°C, -1.0V, dBm, Symbol
Parameters Test Conditions
Conversion Gain
Units
-12.0 -10.0 -12.5
Typ.
-10.5 -8.0 -10.0 -23.5
Image Rejection Ratio
Notes: Performance verified 100% on-wafer. 100% on-wafer testing done frequency GHz; frequency GHz. external degree hybrid coupler from M/A-COM: 2032-6344-00. Frequency GHz.
AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation 25°C, -1V,
drain
gate
Highly linear down conversion conversion mixer application (Gate pumped mixer operation)
AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation 25°C, -1V, o=50)
CONVERSION GAIN (dB), RETURN LOSS (dB)
CONVERSION GAIN (dB)
Conv. Gain (dB) Return Loss (dB)
FREQUENCY (GHz)
-1.5
-0.5
Figure Conversion Gain Match Frequency. RF=20 GHz, LO=10 dBm.
Figure Conversion Gain Gate Voltage. RF=20 GHz, LO=10 dBm.
RETURN LOSS (dB)
ISOLATION (dB)
RF-IF LO-IF LO-RF
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Return Loss. LO=10 dBm.
Figure Isolation. LO=+10 dBm, IF=1 GHz.
AMMC-6530 Typical Performance under Gate Pumped Conversion Operation 25°C, -1V, o=50)
gate
drain
CONVERSION GAIN (dB)
(dB) (dB)
CONVERSION GAIN (dB)
(dB) (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Up-conversion Gain with terminated Side Conversion. LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
ISOLATION (dB) CONVERSION LOSS (dB)
Figure Up-conversion Gain terminated High Side Conversion. LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
FREQUENCY (GHz)
PLO=PIF (dB)
Figure LO-RF Up-conversion Isolation.
Figure Up-conversion Gain Pumping Power. power=IF power, IF=1 GHz, RF=25 GHz.
AMMC-6530 Typical Performance under Drain Pumped Down Conversion Operation 25°C, -1V,
drain
gate
conversion loss mixer configuration (Drain pumped mixer operation)
Biasing Operation recommended bias condition optimum performance, reliability volts. This applied either connections they internally connected. There current consumption gate biasing because mixer designed passive operation. down conversion, AMMC-6530 configured loss high linearity application. loss configuration, applied through drain. this configuration, AMMC-6530 "drain pumped mixer" higher linearity applications, applied through gate. this configuration, AMMC-6530 "gate pumped mixer" Resistive mixer). mixer also suitable up-conversion applications under gate pumped mixer operation shown page Please note that image rejection isolation performance dependent selection frequency quadrature hybrid. performance specification frequency quadrature hybrid well phase balance VSWR interface AMMC-6530 will affect overall mixer performance.
drain
gate
Figure Simplified MMIC Schematic.
Figure AMMC-6530 Bond locations.
Assembly Techniques backside MMIC chip ground. microstrip applications chip should attached directly ground plane (e.g. circuit carrier heatsink) using electrically conductive epoxy [1]. best performance, topside MMIC should brought same height circuit surrounding This accomplished mounting gold plate metal shim (same length width MMIC) under chip which correct thickness make chip adjacent circuit same height. amount epoxy used chip and/or shim attachment should just enough provide thin fillet around bottom perimeter chip shim. ground plane should free residue that jeopardize electrical mechanical attachment. location bond pads shown Figure Note that input output ports Ground-Signal-Ground configuration.
connections should kept short reasonable minimize performance degradation undesirable series inductance. single bond wire normally sufficient signal connections, however double bonding with gold wire gold mesh[2] recommended best performance, especially near high frequency band. Thermosonic wedge bonding preferred method wire attachment bond pads. Gold mesh attached using round tracking tool tool force approximately grams ultrasonic power roughly duration 76±8 guided wedge untrasonic power level used wire. recommended wire bond stage temperature 150±2°C. Caution should taken exceed Absolute Maximum Rating assembly temperature time.
chip thick should handled with care. This MMIC exposed bridges surface should handled edges with custom collet pick with vacuum center). This MMIC also static sensitive precautions should taken.
Notes: Ablebond 84-1 silver epoxy recommended. Buckbee-Mears Corporation, Paul, 800-262-3824
Part Number Ordering Information
Part Number AMMC-6530-W10 AMMC-6530-W50 Devices Container
LO/RF
RF/LO
Figure AMMC-6530 Assembly Diagram.
product information complete list distributors, please site:
www.avagotech.com
Avago, Avago Technologies, logo trademarks Avago Technologies, Limited United States other countries. Data subject change. Copyright 2006 Avago Technologies, Limited. rights reserved. Obsoletes 5989-3670EN 5989-3945EN November 2006

Image Reject Mixer drain Chip Size: 1300 1400 Chip Size Tole

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