| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
Supports Modes Maximum Clock Frequency Flexible, Uniform Erase Ar
Top Searches for this datasheetSingle 1.65V 1.95V Supply Serial Peripheral Interface (SPI) Compatible Supports Modes Maximum Clock Frequency Flexible, Uniform Erase Architecture 4-Kbyte Blocks 32-Kbyte Blocks 64-Kbyte Blocks Full Chip Erase Individual Sector Protection with Global Protect/Unprotect Feature Sixteen 64-Kbyte Physical Sectors Hardware Controlled Locking Protected Sectors Flexible Programming Byte/Page Program Bytes) Automatic Checking Reporting Erase/Program Failures JEDEC Standard Manufacturer Device Read Methodology Power Dissipation Active Read Current (Typical) Deep Power-Down Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: Years Complies with Full Industrial Temperature Range Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (150-mil wide) 8-contact Ultra Thin 8-ball dBGA (WLCSP) 8-megabit 1.8-volt Only Serial Firmware DataFlash® Memory AT25DF081 Preliminary Description AT25DF081 serial interface Flash memory device designed wide variety high-volume consumer based applications which program code shadowed from Flash memory into embedded external execution. flexible erase architecture AT25DF081, with erase granularity small 4-Kbytes, makes ideal data storage well, eliminating need additional data storage EEPROM devices. physical sectoring erase block sizes AT25DF081 have been optimized meet needs today's code data storage applications. optimizing size physical sectors erase blocks, memory space used much more efficiently. Because certain code modules data storage segments must reside themselves their protected sectors, wasted unused memory space that occurs with large sectored large block erase Flash memory devices greatly reduced. This increased memory space efficiency allows additional code routines data storage segments added while still maintaining same overall device density. 3674B-DFLASH-10/07 AT25DF081 also offers sophisticated method protecting individual sectors against erroneous malicious program erase operations. providing ability individually protect unprotect sectors, system unprotect specific sector modify contents while keeping remaining sectors memory array securely protected. This useful applications where program code patched updated subroutine module basis, applications where data storage segments need modified without running risk errant modifications program code segments. addition individual sector protection capabilities, AT25DF081 incorporates Global Protect Global Unprotect features that allow entire memory array either protected unprotected once. This reduces overhead during manufacturing process since sectors have unprotected one-by-one prior initial programming. Specifically designed 1.8-volt systems, AT25DF081 supports read, program, erase operations with supply voltage range 1.65V 1.95V. separate voltage required programming erasing. AT25DF081 3674B-DFLASH-10/07 AT25DF081 Descriptions Pinouts Table 2-1. Symbol Descriptions Name Function CHIP SELECT: Asserting selects device. When deasserted, device will deselected normally placed standby mode (not Deep Power-Down mode), will high-impedance state. When device deselected, data will accepted pin. high-to-low transition required start operation, low-to-high transition required operation. When ending internally self-timed operation such program erase cycle, device will enter standby mode until completion operation. SERIAL CLOCK: This used provide clock device used control flow data from device. Command, address, input data present always latched rising edge SCK, while output data always clocked falling edge SCK. SERIAL INPUT: used shift data into device. used data input including command address sequences. Data always latched rising edge SCK. SERIAL OUTPUT: used shift data from device. Data always clocked falling edge SCK. WRITE PROTECT: controls hardware locking feature device. Please refer "Protection Commands Features" page more details protection features pin. internally pulled-high left floating hardware controlled protection will used. However, recommended that also externally connected whenever possible. HOLD: HOLD used temporarily pause serial communication without deselecting resetting device. While HOLD asserted, transitions data will ignored, will high-impedance state. must asserted, must state order Hold condition start. Hold condition pauses serial communication only does have effect internally self-timed operations such program erase cycle. Please refer "Hold" page additional details Hold operation. HOLD internally pulled-high left floating Hold function will used. However, recommended that HOLD also externally connected whenever possible. DEVICE POWER SUPPLY: used supply source voltage device. Operations invalid voltages produce spurious results should attempted. GROUND: ground reference power supply. should connected system ground. Asserted State Type Input Input Input Output Input HOLD Input Power Power 3674B-DFLASH-10/07 Figure 2-1. 8-SOIC View HOLD Figure 2-2. 8-UDFN View HOLD Figure 2-3. 8-dBGA View HOLD Block Diagram CONTROL PROTECTION LOGIC BUFFERS LATCHES SRAM DATA BUFFER INTERFACE CONTROL LOGIC ADDRESS LATCH Y-DECODER Y-GATING HOLD X-DECODER FLASH MEMORY ARRAY Memory Array provide greatest flexibility, memory array AT25DF081 erased four levels granularity including full chip erase. addition, array been divided into physical sectors uniform size, which each sector individually protected from program erase operations. size physical sectors optimized both code data storage applications, allowing both code data segments reside their isolated regions. Figure page illustrates breakdown each erase level well breakdown each physical sector. AT25DF081 3674B-DFLASH-10/07 AT25DF081 Figure 4-1. Memory Architecture Diagram Block Erase Detail Internal Sectoring Sector Protection Function 64KB Block Erase (D8h Command) 32KB Block Erase (52h Command) Block Erase (20h Command) Page Program Detail Block Address Range 000h 000h D000h C000h B000h A000h 9000h 8000h 7000h 6000h 5000h 4000h 3000h 2000h 1000h 0000h 000h 000h D000h C000h B000h A000h 9000h 8000h 7000h 6000h 5000h 4000h 3000h 2000h 1000h 0000h 1-256 Byte Page Program (02h Command) Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Page Address Range D00h C00h B00h A00h 900h 800h 700h 600h 500h 400h 300h 200h 100h 000h D00h C00h B00h A00h 900h 800h 32KB 64KB (Sector 64KB 32KB 32KB 64KB (Sector 64KB 32KB 32KB 64KB (Sector 64KB 32KB 000h 000h 00DF 00D000h 00CF 00C000h 00BF 00B000h 00AF 00A000h 009F 009000h 008F 008000h 007F 007000h 006F 006000h 005F 005000h 004F 004000h 003F 003000h 002F 002000h 001F 001000h 000F 000000h Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes Bytes 0017F 001700h 0016F 001600h 0015F 001500h 0014F 001400h 0013F 001300h 0012F 001200h 0011F 001100h 0010F 001000h 000F 000F 000E 000E 000DF 000D00h 000CF 000C00h 000BF 000B00h 000AF 000A00h 0009F 000900h 0008F 000800h 0007F 000700h 0006F 000600h 0005F 000500h 0004F 000400h 0003F 000300h 0002F 000200h 0001F 000100h 0000F 000000h 3674B-DFLASH-10/07 Device Operation AT25DF081 controlled instructions that sent from host controller, commonly referred Master. Master communicates with AT25DF081 which comprised four signal lines: Chip Select (CS), Serial Clock (SCK), Serial Input (SI), Serial Output (SO). protocol defines total four modes operation (mode with each mode differing respect polarity phase polarity phase control flow data bus. AT25DF081 supports most common modes, Modes only difference between Modes polarity signal when inactive state (when Master standby mode transferring data). With Modes data always latched rising edge always output falling edge SCK. Figure 5-1. Mode Commands Addressing valid instruction operation must always started first asserting pin. After been asserted, Master must then clock valid 8-bit opcode bus. Following opcode, instruction dependent information such address data bytes would then clocked Master. opcode, address, data bytes transferred with most significant (MSB) first. operation ended deasserting pin. Opcodes supported AT25DF081 will ignored device operation will started. device will continue ignore data presented until start next operation being deasserted then reasserted). addition, deasserted before complete opcode address information sent device, then operation will performed device will simply return idle state wait next operation. Addressing device requires total three bytes information sent, representing address bits A23-A0. Since upper address limit AT25DF081 memory array 0FFFFFh, address bits A23-A20 always ignored device. AT25DF081 3674B-DFLASH-10/07 AT25DF081 Table 6-1. Command Read Commands Read Array Read Array (Low Frequency) Program Erase Commands Block Erase (4-KBytes) Block Erase (32-KBytes) Block Erase (64-KBytes) Chip Erase Byte/Page Program Bytes) Protection Commands Write Enable Write Disable Protect Sector Unprotect Sector Global Protect/Unprotect Read Sector Protection Registers Status Register Commands Read Status Register Write Status Register Miscellaneous Commands Read Manufacturer Device Deep Power-Down Resume from Deep Power-Down 1001 1111 1011 1001 1010 1011 0000 0101 0000 0001 0000 0110 0000 0100 0011 0110 0011 1001 1100 0111 0000 0010 0010 0000 0101 0010 1101 1000 0110 0000 0000 1011 0000 0011 Command Listing Opcode Address Bytes Dummy Bytes Data Bytes Write Status Register command 0011 1100 3674B-DFLASH-10/07 Read Commands Read Array Read Array command used sequentially read continuous stream data from device simply providing signal once initial starting address been specified. device incorporates internal address counter that automatically increments every clock cycle. opcodes, 03h, used Read Array command. each opcode depends maximum frequency that will used read data from device. opcode used frequency maximum specified fSCK. opcode used lower frequency read operations maximum specified fRDLF. perform Read Array operation, must first asserted appropriate opcode (0Bh 03h) must clocked into device. After opcode been clocked three address bytes must clocked specify starting address location first byte read within memory array. opcode used, then don't care byte must also clocked after three address bytes. After three address bytes (and don't care byte using opcode 0Bh) have been clocked additional clock cycles will result serial data being output pin. data always output with byte first. When last byte (0FFFFFh) memory array been read, device will continue reading back beginning array (000000h). delays will incurred when wrapping around from array beginning array. Deasserting will terminate read operation into high-impedance state. deasserted time does require that full byte data read. Figure 7-1. Read Array Opcode OPCODE ADDRESS BITS A23-A0 DON'T CARE DATA BYTE HIGH-IMPEDANCE Figure 7-2. Read Array Opcode OPCODE ADDRESS BITS A23-A0 DATA BYTE HIGH-IMPEDANCE AT25DF081 3674B-DFLASH-10/07 AT25DF081 Program Erase Commands Byte/Page Program Byte/Page Program command allows anywhere from single byte data bytes data programmed into previously erased memory locations. erased memory location that eight bits logical state byte value FFh). Before Byte/Page Program command started, Write Enable command must have been previously issued device (see Write Enable command description) Write Enable Latch (WEL) Status Register logical state. perform Byte/Page Program command, opcode must clocked into device followed three address bytes denoting first byte location memory array begin programming After address bytes have been clocked data then clocked into device will stored internal buffer. starting memory address denoted A23-A0 does fall even 256-byte page boundary (A7-A0 then special circumstances regarding which memory locations will programmed will apply. this situation, data that sent device that goes beyond page will wrap around back beginning same page. example, starting address denoted A23-A0 0000FEh, three bytes data sent device, then first bytes data will programmed addresses 0000FEh 0000FFh while last byte data will programmed address 000000h. remaining bytes page (addresses 000001h through 0000FDh) will unaffected will change. addition, more than bytes data sent device, then only last bytes sent will latched into internal buffer. When deasserted, device will take data stored internal buffer program into appropriate memory array locations based starting address specified A23-A0 number complete data bytes sent device. less than bytes data were sent device, then remaining bytes within page will altered. programming data bytes internally self-timed should take place time tPP. three address bytes least complete byte data must clocked into device before deasserted, must deasserted even byte boundaries (multiples eight bits); otherwise, device will abort operation data will programmed into memory array. addition, address specified A23-A0 points memory location within sector that protected state (see "Protect Sector" page 13), then Byte/Page Program command will executed, device will return idle state once been deasserted. Status Register will reset back logical state program cycle aborts incomplete address being sent, incomplete byte data being sent, because memory location programmed protected. While device programming, Status Register read will indicate that device busy. faster throughput, recommended that Status Register polled rather than waiting time determine data bytes have finished programming. some point before program cycle completes, Status Register will reset back logical state. device also incorporates intelligent programming algorithm that detect when byte location fails program properly. programming error arises, will indicated Status Register. 3674B-DFLASH-10/07 Figure 8-1. Byte Program OPCODE ADDRESS BITS A23-A0 DATA Figure 8-2. Page Program HIGH-IMPEDANCE OPCODE ADDRESS BITS A23-A0 DATA BYTE DATA BYTE HIGH-IMPEDANCE Block Erase block 4K-, 32K-, 64K-bytes erased (all bits logical state) single operation using three different opcodes Block Erase command. opcode used 4K-byte erase, opcode used 32K-byte erase, opcode used 64K-byte erase. Before Block Erase command started, Write Enable command must have been previously issued device Status Register logical state. perform Block Erase, must first asserted appropriate opcode (20h, 52h, D8h) must clocked into device. After opcode been clocked three address bytes specifying address within 4K-, 32K-, 64K-byte block erased must clocked additional data clocked into device will ignored. When deasserted, device will erase appropriate block. erasing block internally self-timed should take place time tBLKE. Since Block Erase command erases region bytes, lower order address bits need decoded device. Therefore, 4K-byte erase, address bits A11-A0 will ignored device their values either logical "0". 32K-byte erase, address bits A14-A0 will ignored, 64K-byte erase, address bits A15-A0 will ignored device. Despite lower order address bits being decoded device, complete three address bytes must still clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation erase operation will performed. AT25DF081 3674B-DFLASH-10/07 AT25DF081 address specified A23-A0 points memory location within sector that protected state, then Block Erase command will executed, device will return idle state once been deasserted. Status Register will reset back logical state erase cycle aborts incomplete address being sent because memory location within region erased protected. While device executing successful erase cycle, Status Register read will indicate that device busy. faster throughput, recommended that Status Register polled rather than waiting tBLKE time determine device finished erasing. some point before erase cycle completes, Status Register will reset back logical state. device also incorporates intelligent erasing algorithm that detect when byte location fails erase properly. erase error arises, will indicated Status Register. Figure 8-3. Block Erase OPCODE ADDRESS BITS A23-A0 HIGH-IMPEDANCE Chip Erase entire memory array erased single operation using Chip Erase command. Before Chip Erase command started, Write Enable command must have been previously issued device Status Register logical state. opcodes, C7h, used Chip Erase command. There difference device functionality when utilizing opcodes, they used interchangeably. perform Chip Erase, opcodes (60h C7h) must clocked into device. Since entire memory array erased, address bytes need clocked into device, data clocked after opcode will ignored. When deasserted, device will erase entire memory array. erasing device internally self-timed should take place time tCHPE. complete opcode must clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, erase will performed. addition, sector memory array protected state, then Chip Erase command will executed, device will return idle state once been deasserted. Status Register will reset back logical state sector protected state. While device executing successful erase cycle, Status Register read will indicate that device busy. faster throughput, recommended that Status Regis11 3674B-DFLASH-10/07 polled rather than waiting tCHPE time determine device finished erasing. some point before erase cycle completes, Status Register will reset back logical state. device also incorporates intelligent erasing algorithm that detect when byte location fails erase properly. erase error arises, will indicated Status Register. Figure 8-4. Chip Erase OPCODE HIGH-IMPEDANCE Protection Commands Write Enable Write Enable command used Write Enable Latch (WEL) Status Register logical state. must before program, erase, Protect Sector, Unprotect Sector, Write Status Register command executed. This makes issuance these commands step process, thereby reducing chances command being accidentally erroneously executed. Status Register prior issuance these commands, then command will executed. issue Write Enable command, must first asserted opcode must clocked into device. address bytes need clocked into device, data clocked after opcode will ignored. When deasserted, Status Register will logical "1". complete opcode must clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation state will change. Figure 9-1. Write Enable OPCODE HIGH-IMPEDANCE AT25DF081 3674B-DFLASH-10/07 AT25DF081 Write Disable Write Disable command used reset Write Enable Latch (WEL) Status Register logical state. With reset, program, erase, Protect Sector, Unprotect Sector, Write Status Register commands will executed. Write Disable command also used exit Sequential Program Mode. Other conditions also cause reset; more details, refer section Status Register description page issue Write Disable command, must first asserted opcode must clocked into device. address bytes need clocked into device, data clocked after opcode will ignored. When deasserted, Status Register will reset logical "0". complete opcode must clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation state will change. Figure 9-2. Write Disable OPCODE HIGH-IMPEDANCE Protect Sector Every physical sector device corresponding single-bit Sector Protection Register that used control software protection sector. Upon device power-up after device reset, each Sector Protection Register will default logical state indicating that sectors protected cannot programmed erased. Issuing Protect Sector command particular sector address will corresponding Sector Protection Register logical state. following table outlines states Sector Protection Registers. Table 9-1. Value Sector Protection Register Values Sector Protection Status Sector unprotected programmed erased. Sector protected cannot programmed erased. This default state. Before Protect Sector command issued, Write Enable command must have been previously issued Status Register logical "1". issue Protect Sector command, must first asserted opcode must clocked into device followed three address bytes designating address within sector locked. additional data clocked into device will ignored. When deasserted, Sector Protection Register corresponding physical sector addressed A2313 3674B-DFLASH-10/07 will logical state, sector itself will then protected from program erase operations. addition, Status Register will reset back logical state. complete three address bytes must clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation, state Sector Protection Register will unchanged, Status Register will reset logical "0". safeguard against accidental erroneous protecting unprotecting sectors, Sector Protection Registers themselves locked from updates using SPRL (Sector Protection Registers Locked) Status Register (please refer "Status Register Commands" page more details). Sector Protection Registers locked, then attempts issue Protect Sector command will ignored, device will reset Status Register back logical return idle state once been deasserted. Figure 9-3. Protect Sector OPCODE ADDRESS BITS A23-A0 HIGH-IMPEDANCE Unprotect Sector Issuing Unprotect Sector command particular sector address will reset corresponding Sector Protection Register logical state (see Table page Sector Protection Register values). Every physical sector device corresponding single-bit Sector Protection Register that used control software protection sector. Before Unprotect Sector command issued, Write Enable command must have been previously issued Status Register logical "1". issue Unprotect Sector command, must first asserted opcode must clocked into device. After opcode been clocked three address bytes designating address within sector unlocked must clocked additional data clocked into device after address bytes will ignored. When deasserted, Sector Protection Register corresponding sector addressed A23-A0 will reset logical state, sector itself will unprotected. addition, Status Register will reset back logical state. complete three address bytes must clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation, state Sector Protection Register will unchanged, Status Register will reset logical "0". AT25DF081 3674B-DFLASH-10/07 AT25DF081 safeguard against accidental erroneous locking unlocking sectors, Sector Protection Registers themselves locked from updates using SPRL (Sector Protection Registers Locked) Status Register (please refer "Status Register Commands" page more details). Sector Protection Registers locked, then attempts issue Unprotect Sector command will ignored, device will reset Status Register back logical return idle state once been deasserted. Figure 9-4. Unprotect Sector OPCODE ADDRESS BITS A23-A0 HIGH-IMPEDANCE Global Protect/Unprotect Global Protect Global Unprotect features work conjunction with Protect Sector Unprotect Sector functions. example, system globally protect entire memory array then Unprotect Sector command individually unprotect certain sectors individually reprotect them later using Protect Sector command. Likewise, system globally unprotect entire memory array then individually protect certain sectors needed. Performing Global Protect Global Unprotect accomplished writing certain combination data Status Register using Write Status Register command (see "Write Status Register" section page command execution details). Write Status Register command also used modify SPRL (Sector Protection Registers Locked) control hardware software locking. perform Global Protect, appropriate SPRL conditions must system must write logical bits Status Register. Conversely, perform Global Unprotect, same SPRL conditions must system must write logical bits Status Register. Table details conditions necessary Global Protect Global Unprotect performed. 3674B-DFLASH-10/07 Table 9-2. Valid SPRL Global Protect/Unprotect Conditions Write Status Register Data 76543210 0x0000xx 0x0001xx 0x1110xx 0x1111xx Protection Operation Global Unprotect Sector Protection Registers reset change current protection. change current protection. change current protection. Global Protect Sector Protection Registers Global Unprotect Sector Protection Registers reset change current protection. change current protection. change current protection. Global Protect Sector Protection Registers State Current SPRL Value SPRL Value 1x0000xx 1x0001xx 1x1110xx 1x1111xx change current protection level. sectors currently protected will remain protected sectors currently unprotected will remain unprotected. xxxxxxxx Sector Protection Registers hard-locked cannot changed when current state SPRL Therefore, Global Protect/Unprotect will occur. addition, SPRL cannot changed (the must HIGH order change SPRL back Global Unprotect Sector Protection Registers reset change current protection. change current protection. change current protection. Global Protect Sector Protection Registers Global Unprotect Sector Protection Registers reset change current protection. change current protection. change current protection. Global Protect Sector Protection Registers change current protection level. sectors currently protected will remain protected, sectors currently unprotected will remain unprotected. Sector Protection Registers soft-locked cannot changed when current state SPRL Therefore, Global Protect/Unprotect will occur. However, SPRL changed back from since HIGH. perform Global Protect/Unprotect, Write Status Register command must issued again after SPRL been changed from 0x0000xx 0x0001xx 0x1110xx 0x1111xx 1x0000xx 1x0001xx 1x1110xx 1x1111xx 0x0000xx 0x0001xx 0x1110xx 0x1111xx 1x0000xx 1x0001xx 1x1110xx 1x1111xx Essentially, SPRL Status Register logical state (Sector Protection Registers locked), then writing Status Register will perform Global Unprotect without changing state SPRL bit. Similarly, writing Status Register will perform Global Protect keep SPRL logical state. SPRL can, course, changed logical writing software-locking hardware-locking desired along with Global Protect. AT25DF081 3674B-DFLASH-10/07 AT25DF081 desire only change SPRL without performing Global Protect Global Unprotect, then system simply write Status Register change SPRL from logical logical provided deasserted. Likewise, system write change SPRL from logical logical without affecting current sector protection status changes will made Sector Protection Registers). When writing Status Register, bits will actually modified will decoded device purposes Global Protect Global Unprotect functions. Only SPRL bit, will actually modified. Therefore, when reading Status Register, bits will reflect values written them will instead indicate status sector protection status. Please refer "Read Status Register" section Table 10-1 page details Status Register format what values read bits Read Sector Protection Registers Sector Protection Registers read determine current software protection status each sector. Reading Sector Protection Registers, however, will determine status pin. read Sector Protection Register particular sector, must first asserted opcode must clocked Once opcode been clocked three address bytes designating address within sector must clocked After last address byte been clocked device will begin outputting data during every subsequent clock cycle. data being output will repeating byte either denote value appropriate Sector Protection Register Table 9-3. Read Sector Protection Register Output Data Sector Protection Register Value Sector Protection Register value (sector unprotected). Sector Protection Register value (sector protected). Output Data Deasserting will terminate read operation into high-impedance state. deasserted time does require that full byte data read. addition reading individual Sector Protection Registers, Software Protection Status (SWP) Status Register read determine all, some, none sectors software protected (please refer "Status Register Commands" page more details). 3674B-DFLASH-10/07 Figure 9-5. Read Sector Protection Register OPCODE ADDRESS BITS A23-A0 DATA BYTE HIGH-IMPEDANCE Protected States Write Protect (WP) linked memory array itself direct effect protection status memory array. Instead, pin, conjunction with SPRL (Sector Protection Registers Locked) Status Register, used control hardware locking mechanism device. hardware locking active, conditions must must asserted SPRL must logical state. When hardware locking active, Sector Protection Registers locked SPRL itself also locked. Therefore, sectors that protected will locked protected state, sectors that unprotected will locked unprotected state. These states cannot changed long hardware locking active, Protect Sector, Unprotect Sector, Write Status Register commands will ignored. order modify protection status sector, must first deasserted, SPRL Status Register must reset back logical state using Write Status Register command. When resetting SPRL back logical "0", possible perform Global Protect Global Unprotect same time since Sector Protection Registers remain soft-locked until after Write Status Register command been executed. permanently connected GND, then once SPRL logical "1", only reset back logical state power-cycle reset device. This allows system power-up with sectors software protected hardware locked. Therefore, sectors unprotected protected needed then hardware locked later time simply setting SPRL Status Register. When deasserted, permanently connected VCC, SPRL Status Register still logical lock Sector Protection Registers. This provides software locking ability prevent erroneous Protect Sector Unprotect Sector commands from being processed. When changing SPRL logical from logical "0", also possible perform Global Protect Global Unprotect same time writing appropriate values into bits Status Register. AT25DF081 3674B-DFLASH-10/07 AT25DF081 tables below detail various protection locking states device. Table 9-4. (Don't Care) Note: Software Protection Register States Sector Protection Register n(1) Sector n(1) Unprotected Protected represents sector number Table 9-5. SPRL Hardware Software Locking Locking SPRL Change Allowed Sector Protection Registers Unlocked modifiable using Protect Unprotect Sector commands. Global Protect Unprotect also performed. Locked current state. Protect Unprotect Sector commands will ignored. Global Protect Unprotect cannot performed. Unlocked modifiable using Protect Unprotect Sector commands. Global Protect Unprotect also performed. Locked current state. Protect Unprotect Sector commands will ignored. Global Protect Unprotect cannot performed. modified from Hardware Locked Locked modified from Software Locked modified from 3674B-DFLASH-10/07 Status Register Commands 10.1 Read Status Register Status Register read determine device's ready/busy status, well status many other functions such Hardware Locking Software Protection. Status Register read time, including during internally self-timed program erase operation. read Status Register, must first asserted opcode must clocked into device. After last opcode been clocked device will begin outputting Status Register data during every subsequent clock cycle. After last (bit Status Register been clocked out, sequence will repeat itself starting again with long remains asserted being pulsed. data Status Register constantly being updated, each repeating sequence will output data. Deasserting will terminate Read Status Register operation into high-impedance state. deasserted time does require that full byte data read. Table 10-1. Status Register Format Name Type(2) Sector Protection Registers locked. Reserved future use. Erase program operation successful. Erase program error detected. asserted. deasserted. sectors software unprotected (all Sector Protection Registers Some sectors software protected. Read individual Sector Protection Registers determine which sectors protected. Reserved future use. sectors software protected (all Sector Protection Registers default). Device write enabled (default). Device write enabled. Device ready. Device busy with internal operation. Description Sector Protection Registers unlocked (default). SPRL Sector Protection Registers Locked Reserved future Erase/Program Error Write Protect (WP) Status Software Protection Status Write Enable Latch Status Notes: RDY/BSY Ready/Busy Status Readable writeable Readable only Only Status Register will modified when using Write Status Register command. AT25DF081 3674B-DFLASH-10/07 AT25DF081 10.1.1 SPRL SPRL used control whether Sector Protection Registers modified not. When SPRL logical state, Sector Protection Registers locked cannot modified with Protect Sector Unprotect Sector commands (the device will ignore these commands). addition, Global Protect Global Unprotect features cannot performed. sectors that presently protected will remain protected, sectors that presently unprotected will remain unprotected. When SPRL logical state, Sector Protection Registers unlocked modified (the Protect Sector Unprotect Sector commands, well Global Protect Global Unprotect features, will processed normal). SPRL defaults logical state after power-up device reset. SPRL modified freely whenever deasserted. However, asserted, then SPRL only changed from logical (Sector Protection Registers unlocked) logical (Sector Protection Registers locked). order reset SPRL back logical using Write Status Register command, will have first deasserted. SPRL only Status Register that user modified Write Status Register command. 10.1.2 read determine been asserted not. 10.1.3 indicates whether last erase program operation completed successfully not. least byte during erase program operation erase program properly, then will logical state. will erase program operation aborts reason such attempt erase program protected region prior erase program operation. will updated after every erase program operation. 10.1.4 Bits bits provide feedback software protection status device. There three possible combinations bits that indicate whether none, some, sectors have been protected using Protect Sector command Global Protect feature. bits indicate that some sectors have been protected, then individual Sector Protection Registers read with Read Sector Protection Registers command determine which sectors fact protected. 10.1.5 indicates current status internal Write Enable Latch. When logical state, device will accept program, erase, Protect Sector, Unprotect Sector, Write Status Register commands. defaults logical state after device power-up reset. addition, will reset logical state automatically under following conditions: 3674B-DFLASH-10/07 Write Disable operation completes successfully Write Status Register operation completes successfully aborts Protect Sector operation completes successfully aborts Unprotect Sector operation completes successfully aborts Byte/Page Program operation completes successfully aborts Block Erase operation completes successfully aborts Chip Erase operation completes successfully aborts logical state, will reset logical operation aborts incomplete unrecognized opcode being clocked into device before deasserted. order reset when operation aborts prematurely, entire opcode program, erase, Protect Sector, Unprotect Sector, Write Status Register command must have been clocked into device. 10.1.6 RDY/BSY RDY/BSY used determine whether internal operation, such program erase, progress. poll RDY/BSY detect completion program erase cycle, Status Register data must continually clocked device until state RDY/BSY changes from logical logical "0". Figure 10-1. Read Status Register OPCODE STATUS REGISTER DATA STATUS REGISTER DATA HIGH-IMPEDANCE 10.2 Write Status Register Write Status Register command used modify SPRL Status Register and/or perform Global Protect Global Unprotect operation. Before Write Status Register command issued, Write Enable command must have been previously issued Status Register logical "1". issue Write Status Register command, must first asserted opcode must clocked into device followed byte data. byte data consists SPRL value, don't care bit, four data bits denote whether Global Protect Unprotect should performed, additional don't care bits (see Table 10-2). additional data bytes that sent device will ignored. When deasserted, SPRL Status Register will modified Status Register will reset back logical "0". values bits state SPRL before Write Status Register command executed (the prior state SPRL bit) will determine whether Global Protect Global Unprotect will perfomed. Please refer "Global Protect/Unprotect" section page more details. AT25DF081 3674B-DFLASH-10/07 AT25DF081 complete byte data must clocked into device before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation, state SPRL will change, potential Global Protect Unprotect will performed, Status Register will reset back logical state. asserted, then SPRL only logical "1". attempt made reset SPRL logical while asserted, then Write Status Register command will ignored, Status Register will reset back logical state. order reset SPRL logical "0", must deasserted. Table 10-2. SPRL Write Status Register Format Global Protect/Unprotect Figure 10-2. Write Status Register OPCODE STATUS REGISTER HIGH-IMPEDANCE Other Commands Functions 11.1 Read Manufacturer Device Identification information read from device enable systems electronically query identify device while system. identification method command opcode comply with JEDEC standard "Manufacturer Device Read Methodology Compatible Serial Interface Memory Devices". type information that read from device includes JEDEC defined Manufacturer vendor specific Device vendor specific Extended Device Information. read identification information, must first asserted opcode must clocked into device. After opcode been clocked device will begin outputting identification data during subsequent clock cycles. first byte that will output will Manufacturer followed bytes Device information. fourth byte output will Extended Device Information String Length, which will indicating that Extended Device Information follows. After Extended Device Information String Length byte output, will into high-impedance state; therefore, additional clock cycles will have affect data will output. indicated JEDEC standard, reading Extended Device Information String Length subsequent data optional. 3674B-DFLASH-10/07 Deasserting will terminate Manufacturer Device read operation into high-impedance state. deasserted time does require that full byte data read. Table 11-1. Manufacturer Device Information Data Type Manufacturer Device (Part Device (Part Extended Device Information String Length Value Byte Table 11-2. Data Type Manufacturer Manufacturer Device Details Value Family Code Density Code Code Product Version Code Family Code: Density Code: Code: Product Version: (AT25DF/26DFxxx series) 00101 (8-Mbit) (Standard series) 00010 Details JEDEC Code: 0001 1111 (1Fh Atmel) JEDEC Assigned Code Device (Part Device (Part Figure 11-1. Read Manufacturer Device OPCODE HIGH-IMPEDANCE MANUFACTURER DEVICE BYTE DEVICE BYTE EXTENDED DEVICE INFORMATION STRING LENGTH Note: Each transition shown represents byte bits) AT25DF081 3674B-DFLASH-10/07 AT25DF081 11.2 Deep Power-Down During normal operation, device will placed standby mode consume less power long remains deasserted internal operation progress. Deep Power-Down command offers ability place device into even lower power consumption state called Deep Power-Down mode. When device Deep Power-Down mode, commands including Read Status Register command will ignored with exception Resume from Deep Power-Down command. Since commands will ignored, mode used extra protection mechanism against program erase operations. Entering Deep Power-Down mode accomplished simply asserting pin, clocking opcode B9h, then deasserting pin. additional data clocked into device after opcode will ignored. When deasserted, device will enter Deep Power-Down mode within maximum time tEDPD. complete opcode must clocked before deasserted, must deasserted even byte boundary (multiples eight bits); otherwise, device will abort operation return standby mode once deasserted. addition, device will default standby mode after power-cycle device reset. Deep Power-Down command will ignored internally self-timed operation such program erase cycle progress. Deep Power-Down command must reissued after internally self-timed operation been completed order device enter Deep Power-Down mode. Figure 11-2. Deep Power-Down tEDPD OPCODE HIGH-IMPEDANCE Active Current Standby Mode Current Deep Power-Down Mode Current 3674B-DFLASH-10/07 11.3 Resume from Deep Power-Down order exit Deep Power-Down mode resume normal device operation, Resume from Deep Power-Down command must issued. Resume from Deep Power-Down command only command that device will recognize while Deep Power-Down mode. resume from Deep Power-Down mode, must first asserted opcode must clocked into device. additional data clocked into device after opcode will ignored. When deasserted, device will exit Deep PowerDown mode within maximum time tRDPD return standby mode. After device returned standby mode, normal command operations such Read Array resumed. complete opcode clocked before deasserted, deasserted even byte boundary (multiples eight bits), then device will abort operation return Deep Power-Down mode. Figure 11-3. Resume from Deep Power-Down tRDPD OPCODE HIGH-IMPEDANCE Active Current Deep Power-Down Mode Current Standby Mode Current AT25DF081 3674B-DFLASH-10/07 AT25DF081 11.4 Hold HOLD used pause serial communication with device without having stop reset clock sequence. Hold mode, however, does have affect internally self-timed operations such program erase cycle. Therefore, erase cycle progress, asserting HOLD will pause operation, erase cycle will continue until finished. Hold mode only entered while asserted. Hold mode activated simply asserting HOLD during pulse. HOLD asserted during high pulse, then Hold mode won't started until beginning next pulse. device will remain Hold mode long HOLD asserted. While Hold mode, will high-impedance state. addition, both will ignored. pin, however, still asserted deasserted while Hold mode. Hold mode resume serial communication, HOLD must deasserted during pulse. HOLD deasserted during high pulse, then Hold mode won't until beginning next pulse. deasserted while HOLD still asserted, then operation that have been started will aborted, device will reset Status Register back logical state. Figure 11-4. Hold Mode HOLD Hold Hold Hold 3674B-DFLASH-10/07 Electrical Specifications 12.1 Absolute Maximum Ratings* *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions beyond those indicated operational sections this specification implied. Exposure absolute maximum rating conditions extended periods affect device reliability. Temperature Under Bias. -55°C +125°C Storage Temperature -65°C +150°C Input Voltages (including Pins) with Respect Ground .-0.6V +3.8V Output Voltages with Respect Ground .-0.6V 0.5V 12.2 Operating Range AT25DF081 Ind. -40°C +85°C 1.65V 1.95V Operating Temperature (Case) Power Supply 12.3 Characteristics Parameter Standby Current Deep Power-Down Current Condition HOLD VCC, inputs CMOS levels HOLD VCC, inputs CMOS levels MHz, IOUT VIL, MHz; IOUT VIL, MHz, IOUT VIL, MHz, IOUT VIL, -100 Units Symbol IDPD ICC1 Active Current, Read Operation ICC2 ICC3 Active Current, Program Operation Active Current, Erase Operation Input Leakage Current Output Leakage Current Input Voltage Input High Voltage Output Voltage Output High Voltage VCC, VCC, CMOS levels VOUT CMOS levels AT25DF081 3674B-DFLASH-10/07 AT25DF081 12.4 fSCK fRDLF tSCKH tSCKL tSCKR Characteristics Parameter Serial Clock (SCK) Frequency Frequency Read Array (Low Frequency opcode) High Time Time Rise Time, Peak-to-Peak (Slew Rate) Fall Time, Peak-to-Peak (Slew Rate) Chip Select High Time Chip Select Setup Time (relative SCK) Chip Select Hold Time (relative SCK) Chip Select High Setup Time (relative SCK) Chip Select High Hold Time (relative SCK) Data Setup Time Data Hold Time Output Disable Time Output Valid Time Output Hold Time HOLD Setup Time (relative SCK) HOLD Hold Time (relative SCK) HOLD High Setup Time (relative SCK) HOLD High Hold Time (relative SCK) HOLD Output High-Z HOLD High Output Low-Z Write Protect Setup Time Write Protect Hold Time Sector Protect Time (from Chip Select High) Sector Unprotect Time (from Chip Select High) Chip Select High Deep Power-Down Chip Select High Standby Mode 100% tested (value guaranteed design characterization). load MHz, load MHz. Only applicable constraint Write Status Register command when SPRL Units V/ns V/ns Symbol tSCKF(1) tCSH tCSLS tCSLH tCSHS tCSHH tDIS(1) tV(2) tHLS tHLH tHHH tHLQZ(1) tHHQX(1) tWPS(1)(3) tWPH(1)(3) tSECP(1) tSECUP(1) tEDPD tRDPD(1) Notes: 3674B-DFLASH-10/07 12.5 Program Erase Characteristics Parameter Page Program Time (256 Bytes) Byte Program Time 4-Kbyte Units Symbol tBLKE tCHPE(1) tWRSR Notes: Block Erase Time 32-Kbyte 64-Kbyte Chip Erase Time Write Status Register Time 100% tested (value guaranteed design characterization). 12.6 tVCSL tPUW VPOR Power-Up Conditions Parameter Minimum Chip Select Time Power-up Device Delay Before Program Erase Allowed Power-On Reset Voltage Units Symbol 12.7 Input Test Waveforms Measurement Levels DRIVING LEVELS 0.9VCC VCC/2 0.1VCC MEASUREMENT LEVEL (10% 90%) 12.8 Output Test Load DEVICE UNDER TEST AT25DF081 3674B-DFLASH-10/07 AT25DF081 Waveforms Figure 13-1. Serial Input Timing tCSH tCSLS tSCKH tCSLH tSCKL tCSHH tCSHS HIGH-IMPEDANCE Figure 13-2. Serial Output Timing tSCKH tSCKL tDIS Figure 13-3. HOLD Timing Serial Input tHHH tHLS tHLH tHHS HOLD HIGH-IMPEDANCE 3674B-DFLASH-10/07 Figure 13-4. HOLD Timing Serial Output tHHH tHLS tHLH tHHS HOLD tHLQZ tHHQX Figure 13-5. Timing Write Status Register Command When SPRL tWPS tWPH WRITE STATUS REGISTER OPCODE WRITE STATUS REGISTER DATA BYTE NEXT OPCODE HIGH-IMPEDANCE AT25DF081 3674B-DFLASH-10/07 AT25DF081 Ordering Information 14.1 Green Package Options (Pb/Halide-free/RoHS Compliant) fSCK (MHz) Ordering Code AT25DF081-SSH-1.8 AT25DF081-MH-1.8 Package Lead Finish NiPdAu NiPdAu Operation Range Industrial (-40°C +85°C) Package Type 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8-contact, Ultra Thin Dual Flat Lead Package (UDFN) 3674B-DFLASH-10/07 Packaging Information 15.1 JEDEC SOIC VIEW VIEW SYMBOL COMMON DIMENSIONS (Unit Measure NOTE 0.10 0.25 SIDE VIEW Note: These drawings general information only. Refer JEDEC Drawing MS-012, Variation proper dimensions, tolerances, datums, etc. 3/17/05 1150 Cheyenne Mtn. Blvd. Colorado Springs, 80906 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING REV. AT25DF081 3674B-DFLASH-10/07 AT25DF081 15.2 UDFN INDEX AREA COMMON DIMENSIONS (Unit Measure SYMBOL 0.00 5.80 4.70 3.30 3.90 0.35 6.00 4.90 3.40 4.00 0.40 1.27 3.81 0.60 0.05 6.20 5.10 3.50 4.10 0.45 NOTE 0.50 0.60 0.70 10/13/05 1150 Cheyenne Mtn. Blvd. Colorado Springs, 80906 TITLE 8Y7, 8-lead (6.00 4.90 Body) Ultra-Thin SOIC Array Package (UTSAP) DRAWING REV. 3674B-DFLASH-10/07 Revision History Revision Level Release Date September 2007 History Initial release Changed part number ordering code reflect NiPdAu lead finish Changed AT25DF081-SSU-1.8 AT25DF081-SSH-1.8 Changed AT25DF081-MU-1.8 AT25DF081-MH-1.8 Added lead finish details Ordering Information table October 2007 AT25DF081 3674B-DFLASH-10/07 Headquarters Atmel Corporation 2325 Orchard Parkway Jose, 95131 Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 International Atmel Asia Room 1219 Chinachem Golden Plaza Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Atmel Europe Krebs Jean-Pierre Timbaud 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Product Contact Site www.atmel.com Technical Support dataflash@atmel.com Sales Contact www.atmel.com/contacts Literature Requests www.atmel.com/literature Disclaimer: information this document provided connection with Atmel products. license, express implied, estoppel otherwise, intellectual property right granted this document connection with sale Atmel products. EXCEPT FORTH ATMEL'S TERMS CONDITIONS SALE LOCATED ATMEL'S SITE, ATMEL ASSUMES LIABILITY WHATSOEVER DISCLAIMS EXPRESS, IMPLIED STATUTORY WARRANTY RELATING PRODUCTS INCLUDING, LIMITED IMPLIED WARRANTY MERCHANTABILITY, FITNESS PARTICULAR PURPOSE, NON-INFRINGEMENT. EVENT SHALL ATMEL LIABLE DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES LOSS PROFITS, BUSINESS INTERRUPTION, LOSS INFORMATION) ARISING INABILITY THIS DOCUMENT, EVEN ATMEL BEEN ADVISED POSSIBILITY SUCH DAMAGES. Atmel makes representations warranties with respect accuracy completeness contents this document reserves right make changes specifications product descriptions time without notice. Atmel does make commitment update information contained herein. Unless specifically provided otherwise, Atmel products suitable for, shall used automotive applications. Atmel's products intended, authorized, warranted components applications intended support sustain life. 2007 Atmel Corporation. rights reserved. Atmel logo combinations thereof, DataFlash others registered trademarks trademarks Atmel Corporation subsidiaries. Other terms product names trademarks others. 3674B-DFLASH-10/07 Other recent searchesTMS320 - TMS320 TMS320 Datasheet TMS320C5x - TMS320C5x TMS320C5x Datasheet SN74CBTLV16211 - SN74CBTLV16211 SN74CBTLV16211 Datasheet MPC8245UMAD - MPC8245UMAD MPC8245UMAD Datasheet MC56F8347E - MC56F8347E MC56F8347E Datasheet MC100EP31 - MC100EP31 MC100EP31 Datasheet LPI-10 - LPI-10 LPI-10 Datasheet LCX029CRT - LCX029CRT LCX029CRT Datasheet IRFR9120 - IRFR9120 IRFR9120 Datasheet IRFU9120 - IRFU9120 IRFU9120 Datasheet ILC1232 - ILC1232 ILC1232 Datasheet
Privacy Policy | Disclaimer |