Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7848BDP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 1.7021 12.9417 9.6767 45.6795 Ambient 1.6680 410.1105 34.0136 1.6033 Case 4.4900 763.6100 1.5502 1.1817 Case 5.8976 817.8572 13.5077 11.1571 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73997 Revision: 21-Jun-07
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Si7848BDP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.1831 12.8594 21.2722 32.6853 Ambient 3.2541 42.8876 483.6856 1.7209
Case 12.9831 880.7106 1.6900 916.3063 Case 85.5122 513.3697 5.6650 367.8514
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73997 Revision: 21-Jun-07
Si7848BDP_RC
Document Number: 73997 Revision: 21-Jun-07
www.vishay.com
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