Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7222DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 13.7825 12.9707 11.9353 55.1068 Ambient 11.0393 106.1373 668.0599 1.5189 Case 111.2856 75.3037 1.8468 4.9734 Case 3.2549 65.1010 298.0335 969.2977 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74826 Revision: 20-Jul-07
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Si7222DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.7490 17.1611 14.3379 53.5978 Ambient 332.8221 4.4938 80.9716 1.4821
Case 2.0666 1.8487 1.6172 1.4820 Case 177.2253 338.2322 697.8168 690.0406
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74826 Revision: 20-Jul-07
Si7222DN_RC
Document Number: 74826 Revision: 20-Jul-07
www.vishay.com
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