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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si5908DC_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 8.3317 21.6042 26.1607 53.9035 Ambient 179.1861 26.5256 1.6198 1.4637 Case Case Foot 12.8074 6.6905 5.5298 14.9724 Foot 1.6504 186.0167 163.4987 3.2815
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74025 Revision: 27-Jun-07
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Si5908DC_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 12.1630 25.8698 19.2265 52.7407 Ambient 212.0208 1.5983 27.4261 1.4711
Case Case
Foot 7.6073 17.7596 10.3944 4.2386 Foot 167.8469 665.0326 3.9489 212.0831
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74025 Revision: 27-Jun-07
Si5908DC_RC
Document Number: 74025 Revision: 27-Jun-07
www.vishay.com

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