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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4436DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 14.7729 5.5562 19.9735 44.4841 Ambient 29.0266 2.0800 123.2311 1.4515 Case Case Foot 7.0506 1.4486 2.8810 13.5970 Foot 5.9640 387.3306 716.4164 51.9075
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74327 Revision: 07-May-07
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Si4436DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.5113 19.7159 19.1722 40.3395 Ambient 1.5876 17.5910 111.5355 1.4772
Case Case
Foot 2.8072 9.4435 7.3330 5.3861 Foot 770.0395 7.5960 56.3411 38.4668
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74327 Revision: 07-May-07
Si4436DY_RC
Document Number: 74327 Revision: 07-May-07
www.vishay.com

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