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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4322DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 17.1723 12.9522 4.7615 49.9151 Ambient 187.4883 32.2048 4.8803 1.5621 Case Case Foot 5.5174 852.8789 4.5071 9.1402 Foot 7.4902 1.1691 601.5209 67.7654
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74989 Revision 13-Mar-07
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Si4322DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.1281 23.6045 8.7632 45.2722 Ambient 4.0459 37.7201 470.0537 1.0935
Case Case
Foot 1.9457 7.9471 9.1537 929.7055 Foot 1.5390 8.8451 111.0811 1.7921
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74989 Revision 13-Mar-07
Si4322DY_RC
Document Number: 74989 Revision 13-Mar-07
www.vishay.com

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