IRLL014 HEXFET® Power MOSFET Surface Mount Available Tape Re

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IRLL014 HEXFET® Power MOSFET Surface Mount Available Tape Re

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90866A
IRLL014
HEXFET® Power MOSFET
Surface Mount Available Tape Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified VGS=4V Fast Switching Ease Paralleling
VDSS RDS(on) 0.20
2.7A
Description
Third Generation HEXFETs from International Rectifier provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOT-223 package designed surface-mount using vapor phase, infra red, wave soldering techniques. unique package design allows easy automatic pick-andplace with other SOIC packages added advantage improved thermal performance enlarged heatsinking. Power dissipation grreater than 1.25W possible typical surface mount application.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldewring Temperature, seconds
Max.
0.025 0.017 -/+10 0.31
(1.6mm from case)
Units
W/°C
dv/dt TSTG
V/ns
Thermal Resistance
Parameter
Junction-to-PCB Junction-to-Ambient. (PCB Mount)**
Typ.
Max.
Units
°C/W
When mounted SQUARE (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994. Document Number: 90407
2/1/99 www.vishay.com
IRLL014
25°C (unless otherwise specified)
Min. Typ. Max. Units Conditions 250µA 0.073 V/°C Reference 25°C, 0.20 5.0V, 1.6A 0.28 4.0V, 1.4A VGS, 250µA 25V, 60V, 48V, 125°C -100 -10V 5.0V, Fig. Fig. Between lead, 6mm(0.25in) from package center contact. 1.0MHz, Fig.
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 2.7A, 25°C, 0.33 0.65 di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
10A, di/dt 90A/µs, V(BR)DSS,
150°C
VDD=25V, starting 25°C,
2.7A. (See Figure Document Number: 90407
Pulse width 300µs; duty cycle
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Electrical Characteristics
IRLL014
Document Number: 90407
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IRLL014
Document Number: 90407
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IRLL014
Document Number: 90407
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IRLL014
Document Number: 90407
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IRLL014
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
AFER CODE PART NUMBER
Document Number: 90407
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IRLL014
Tape Reel Information
SOT-223 Outline
NOTES 2,50
5.40 1.90
330.00 (13.000)
0.00
(.72
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data specifications subject change without notice. 2/99 Document Number: 90407 www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
products described herein were acquired Vishay Intertechnology, Inc., part acquisition International Rectifier's Power Control Systems (PCS) business, which closed April 2007. Specifications products displayed herein pending review Vishay subject terms conditions shown below. Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale. International Rectifier®, IR®, logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, POWIRTRAIN® registered trademarks International Rectifier Corporation U.S. other countries. other product names noted herein trademarks their respective owners.
Document Number: 99901 Revision: 12-Mar-07
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IRLL014 HEXFET® Power MOSFET Surface Mount Available Tape Re

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