Small Surface Mount Ultrafast Diodes surface mounted applications

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Small Surface Mount Ultrafast Diodes surface mounted applications

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ES07B ES07D
Small Surface Mount Ultrafast Diodes
surface mounted applications profile package Ideal automated placement Glass passivated High temperature soldering: seconds terminals Lead (Pb)-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
17249
Mechanical Data
Case: JEDEC DO-219AB Plastic case Polarity: Band denotes cathode Weight: approx. (SMF®)
Packaging codes-options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part ES07B ES07D Ordering code ES07B-GS18 ES07B-GS08 ES07D-GS18 ES07D-GS08 Marking Remarks Tape Reel Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Maximum repetitive peak reverse voltage Maximum voltage Maximum blocking voltage Maximum average forward rectified current Peak forward surge current single half sine-wave
Test condition
Part ES07B ES07D ES07B ES07D ES07B ES07D
Symbol VRRM VRRM VRMS VRMS IF(AV) IF(AV) IFSM
Value
Unit
Mounted epoxy glass with pads thick)
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Operating junction storage temperature range Mounted epoxy glass with pads thick) Document Number 85737 Rev. 1.7, 13-Apr-05 www.vishay.com air1) Test condition Symbol RthJA TSTG Value Unit
ES07B ES07D
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Maximum instantaneous forward voltage Test condition Symbol Typ. 0.98 Unit
Maximum reverse current 25°C rated blocking voltage 100°C Reverse recovery time Typical capacitance
0.25
Pulse test, pulse with duty cycle
Typical Characteristics (Tamb unless otherwise specified)
7,00
1MHz
6,00
5,00
[pF]
4,00 3,00 2,00 1,00
typical 25°C typical 150°C typical 100°C
0,01
0,001 0,00
18242
0,20
0,40
0,60 0,80
1,00
1,20
1,40
0,00
18244
Figure Typical Forward Characteristics
Figure Typ. Diode Capacitance Reverse Voltage
ambient temperature point temperature
1000
Average Forward Current
[µA]
TJ=25°C TJ=50°C TJ=75°C TJ=100°C TJ=125°C TJ=150°C TJ=0°C TJ=-50°C
0,01
18243
Temperature (Ambient Tie) [°C]
18245
Figure Typical Reverse Characteristics Figure Forward Current Derating Curve
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Document Number 85737 Rev. 1.7, 13-Apr-05
ES07B ES07D
Vishay Semiconductors Package Dimensions (Inches)
0.85 (0.033) 0.35 (0.014)
(0.152) (0.137)
0.99 (0.039) 0.97 (0.038)
0.16 (0.006)
Detail enlarged
Cathode Band View
(0.074) (0.066) 0.10
(0.047) (0.031)
(0.113) (0.105) Method
Mounting Layout
(0.062) (0.051)
(0.055)
17247
Document Number 85737 Rev. 1.7, 13-Apr-05
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ES07B ES07D
Vishay Semiconductors Blistertape
18513
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Document Number 85737 Rev. 1.7, 13-Apr-05
ES07B ES07D
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85737 Rev. 1.7, 13-Apr-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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