Small Signal Switching Diode Silicon Epitaxial Planar Diodes Fast

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Small Signal Switching Diode Silicon Epitaxial Planar Diodes Fast

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IMBD4448-V
Small Signal Switching Diode
Silicon Epitaxial Planar Diodes Fast switching diode case SOT-23, especially suited automatic insertion. This diodes also available other case styles including: DO-35 case with type designation 1N4448, Mini-MELF case with type designation LL4448, SOD-123 case with type designation 1N4448W-V. Lead (Pb)-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
16923
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part IMBD4448-V Ordering code IMBD4448-V-GS18 IMBD4448-V-GS08 Marking Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Peak reverse voltage Rectified current (average) half wave rectification with resist. Surge forward current Power dissipation
Test condition
Symbol
Value
Unit
Tamb Tamb
IF(AV) IFSM Ptot
Device fiberglass substrate, layout (SOT-23).
Document Number 85732 Rev. 1.4, 07-Apr-05
www.vishay.com
IMBD4448-V
Vishay Semiconductors Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
Test condition
Symbol RthJA
Value 4501)
Unit °C/W
Device fiberglass substrate, layout (SOT-23).
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Leakage current Test condition Diode capacitance Reverse recovery time (see figures) Symbol Ctot 0.62 Typ. 0.72 Unit
Layout RthJA test
Thickness: Fiberglass (0.059 in.) Copper leads (0.012 in.)
(0.3) (0.12)
(0.4) (0.47) (0.59) (0.03)
(0.8) (0.4) (0.8)
(0.2)
(0.06) (0.2)
17451
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Document Number 85732 Rev. 1.4, 07-Apr-05
IMBD4448-V
Vishay Semiconductors Typical Characteristics (Tamb unless otherwise specified)
Ptot Admissible Power Dissipation
1000
Forward Current
1000
0.01
Tamb Ambient Temperature
18689
Forward Voltage
18663
Figure Forward Current Forward Voltage
Figure Admissible Power Dissipation Ambient Temperature
Dynamic Forward Resistance
10000
Ctot Relative Capacitance
1000
0.01
18662
Forward Current
18664
Reverse Voltage
Figure Dynamic Forward Resistance Forward Current
Figure Relative Capacitance Reverse Voltage
Admissible Repetitive Peak Forward Current
18709
Pulse Length
Figure Admissible Repetitive Peak Forward Current Pulse Duration
Document Number 85732 Rev. 1.4, 07-Apr-05
www.vishay.com
IMBD4448-V
Vishay Semiconductors Package Dimensions (Inches)
1.15 (.045)
0.175 (.007) 0.098 (.005) (.004) max. (.016) (.016) (.102) 2.35 (.092)
0.95 (.037)
Method
(.122) (.110) (.016)
1.43 (.056) 1.20(.047)
Mounting Layout
0.52 (0.020)
(0.035)
(0.079)
0.95 (.037)
0.95 (.037) 0.95 (0.037) 0.95 (0.037)
17418
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Document Number 85732 Rev. 1.4, 07-Apr-05
IMBD4448-V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85732 Rev. 1.4, 07-Apr-05
www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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Small Signal Switching Diode Silicon Epitaxial Planar Diodes Fast

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