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Small Signal Schottky Diodes Integrated protection ring against s
Top Searches for this datasheetBAS381 Small Signal Schottky Diodes Integrated protection ring against static discharge capacitance leakage current forward voltage drop Very switching time Lead (Pb)-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC 9612315 Applications General purpose switching Schottky barrier diode HF-Detector Protection circuit Diode currents with supply voltage Small battery charger Power supplies converter notebooks Mechanical Data Case: MicroMELF Glass case Weight: approx. Cathode Band Color: Black Packaging Codes/Options: reel tape), k/box reel tape), 12.5 k/box Parts Table Part BAS381 BAS382 BAS383 Type differentiation Ordering code BAS381-TR3 BAS381-TR BAS382-TR3 BAS382-TR BAS383-TR3 BAS383-TR Remarks Tape Reel Tape Reel Tape Reel Absolute Maximum Ratings Tamb unless otherwise specified Parameter Reverse voltage Test condition Part BAS381 BAS382 BAS383 Peak forward surge current Repetitive peak forward current Forward continuous current Symbol IFSM IFRM Value Unit Document Number 85503 Rev. 1.9, 07-Mar-06 www.vishay.com BAS381 Vishay Semiconductors Thermal Characteristics Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition board Symbol RthJA Tstg Value Unit Electrical Characteristics Tamb unless otherwise specified Parameter Forward voltage Test condition Reverse current Diode capacitance VRmax Symbol Typ. 1000 Unit Typical Characteristics Tamb unless otherwise specified 1000 Reverse Power Dissipation (mW) Forward Current thJA =150 Limit Limit 0.01 15796 15794 Junction Temperature (°C) Forward Voltage Figure Max. Reverse Power Dissipation Junction Temperature Figure Forward Current Forward Voltage 1000 Diode Capacitance (pF) VRRM Reverse Current (µA) 15795 15797 Junction Temperature (°C) Reverse Voltage Figure Reverse Current Junction Temperature Figure Diode Capacitance Reverse Voltage www.vishay.com Document Number 85503 Rev. 1.9, 07-Mar-06 BAS381 0.71 1.27 0.152 0.355 10329 Figure Board RthJA definition Package Dimensions (Inches) Cathode indification (0.039) surface plan Glass case MicroMELF (0.079) (0.071) 0.25 (0.010) 0.15 (0.006) (0.047) (0.043) 0.098) Glass Method Reflow Soldering (0.047) (0.055) Wave Soldering (0.031) (0.031) (0.094) Document No.: 6.560-5007.01-4 Rev. 07.Feb.2005 9612072 (0.031) (0.035) (0.039) (0.110) Document Number 85503 Rev. 1.9, 07-Mar-06 surface plan (0.024) (0.035) www.vishay.com BAS381 Vishay Semiconductors Ozone Depleting Substances Policy Statement policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances. reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com Document Number 85503 Rev. 1.9, 07-Mar-06 Legal Disclaimer Notice Vishay Notice Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com Other recent searchesSi4884DY - Si4884DY Si4884DY Datasheet RB421D - RB421D RB421D Datasheet GHB-3M60D-Y - GHB-3M60D-Y GHB-3M60D-Y Datasheet FAN7930C - FAN7930C FAN7930C Datasheet BTR-3640G - BTR-3640G BTR-3640G Datasheet
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