Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7858ADP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 946.5230 8.0656 10.1483 45.8518 Ambient 11.4890 911.3916 56.2065 1.5554 Case 183.0276 353.5314 346.7550 803.7650 Case 606.1407 1.9730 46.7980 23.2194 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73648 Revision 02-Dec-05
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Si7858ADP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.6016 6.8601 7.0503 43.0605 Ambient 24.5023 215.8741 5.3302 1.2592
Case 102.1132 472.5244 437.2947 586.8335 Case 1.0365 913.8278 13.9185 3.1927
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73648 Revision 02-Dec-05
Si7858ADP_RC
Document Number: 73648 Revision 02-Dec-05
www.vishay.com
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