N-Channel Reduced Fast Switching WFET PRODUCT SUMMARY rDS(on

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel Reduced Fast Switching WFET PRODUCT SUMMARY rDS(on

Datasheet Thumbnail

Top Searches for this datasheet

Si4392ADY
N-Channel Reduced Fast Switching WFET
PRODUCT SUMMARY
rDS(on) 0.0075 0.0115 (A)a 21.5 17.4 (Typ)
FEATURES
Extremely WFET® Technology Switching Losses TrenchFET® Power MOSFET Tested
RoHS
COMPLIANT
APPLICATIONS
High-Side DC/DC Conversion Notebook Server
SO-8
View Ordering Information: Si4392ADY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Symbol Tstg Limit 21.5 17.2 15b, 11.8b, 2.7b, 6.25 3.0b, 1.9b, Unit
Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipation
Operating Junction Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter Maximum Maximum Junction-to-Foot (Drain) Junction-to-Ambientb, Steady State Symbol RthJA RthJF Typical Maximum Unit °C/W
Notes: Based Surface Mounted board. sec. Maximum under Steady State conditions °C/W. Document Number: 73458 S-61089-Rev. 19-Jun-06 www.vishay.com
Si4392ADY
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Symbol VGS(th) VGS(th) IGSS IDSS ID(on) rDS(on) ciss coss crss
Test Conditions 12.5 12.5
Unit
0.006 0.009 0.0075 0.0115
mV/°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta
1465 12.5 12.5 VGEN VGEN 0.73 di/dt A/µs,
td(on) td(off) td(on) td(off)
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
www.vishay.com
Document Number: 73458 S-61089-Rev. 19-Jun-06
Si4392ADY
TYPICAL CHARACTERISTICS
unless noted
Drain Current
Drain Current
thru
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.011 1800
Transfer Characteristics
rDS(on) On-Resistance
0.010 Capacitance (pF)
1500
Ciss
0.009
1200
0.008
0.007
Coss Crss
0.006
0.005
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current Gate Voltage
Gate-to-Source Voltage 12.5 rDS(on) On-Resistance (Normalized) 12.5
Capacitance
10.4
15.6
20.8
26.0
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
On-Resistance Junction Temperature
Document Number: 73458 S-61089-Rev. 19-Jun-06
www.vishay.com
Si4392ADY
TYPICAL CHARACTERISTICS unless noted
100.000 rDS(on) Drain-to-Source On-Resistance 0.05
10.000 Source Current
0.04
1.000
0.03
0.100
0.02
0.010
0.01 0.00
0.001
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
VGS(th) Power
On-Resistance Gate-to-Source Voltage
10-2
10-1
Time (sec)
Temperature (°C)
Threshold Voltage
Single Pulse Power
*Limited rDS(on) Drain Current Single Pulse 0.01 *VGS
Drain-to-Source Voltage minimum which rDS(on) specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 73458 S-61089-Rev. 19-Jun-06
Si4392ADY
TYPICAL CHARACTERISTICS unless noted
Drain Current
Power
Case Temperature (°C)
Case Temperature (°C)
Current Derating*
1.70
Power Derating, Junction-to-Foot
1.36
1.02 Power 0.68 0.34 0.00
Case Temperature (°C)
Power, Junction-to-Ambient
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 73458 S-61089-Rev. 19-Jun-06
www.vishay.com
Si4392ADY
TYPICAL CHARACTERISTICS unless noted
Duty Cycle
Normalized Effective Transient Thermal Impedance
Notes:
0.05 0.02
Duty Cycle,
Unit Base RthJA °C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle
Normalized Effective Transient Thermal Impedance
0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
www.vishay.com
Document Number: 73458 S-61089-Rev. 19-Jun-06

N-Channel Reduced Fast Switching WFET PRODUCT SUMMARY rDS(on

Top Searches for this datasheet

Other recent searches